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Dive into the research topics where Hsueh-Rong Chang is active.

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Featured researches published by Hsueh-Rong Chang.


power electronics specialists conference | 1985

High current JBS rectifiers and their impact on switching power supplies

B.J. Baliga; Hsueh-Rong Chang; Robert Louis Steigerwald

The junction barrier controlled Schottky (JBS) rectifier is a Schottky rectifier with a p-n junction grid structure integrated into the device structure to improve its reverse blocking characteristics. This paper reports the development of large area (0.5 cm2), 30V, JBS rectifiers capable of handling over 25A of forward current while operating at up to 125°C with good reverse blocking characteristics. Trade-off curves between forward voltage drop and reverse leakage current are introduced to allow optimization of these devices. Evaluation of their impact on low voltage switching power supplies is presented.


Archive | 1987

Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method

Hsueh-Rong Chang; B.J. Baliga; T.P. Chow


Archive | 1990

Multicellular FET having a Schottky diode merged therewith

Charles Steven Korman; B.J. Baliga; Hsueh-Rong Chang


Archive | 1989

Power rectifier with trenches

Hsueh-Rong Chang; B.J. Baliga; David W. Tong


Archive | 1988

Low noise, high frequency synchronous rectifier

Khai D. T. Ngo; Robert Louis Steigerwald; John P. Walden; B.J. Baliga; Charles Steven Korman; Hsueh-Rong Chang


Archive | 1987

Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area

B.J. Baliga; T.P. Chow; Hsueh-Rong Chang


Archive | 1988

Bidirectional field effect semiconductor device and circuit

B.J. Baliga; Hsueh-Rong Chang; Edward K. Howell


power electronics specialists conference | 1989

High performance power DMOSFET with integrated Schottky diode

Charles Steven Korman; Hsueh-Rong Chang; K. Shenai; John P. Walden


Archive | 1988

Insulated gate bipolar transistor with improved latch-up current level and safe operating area

Hsueh-Rong Chang; B.J. Baliga


Archive | 1989

Field controlled diode (FCD) having MOS trench gates

Hsueh-Rong Chang; B.J. Baliga

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B.J. Baliga

North Carolina State University

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K. Shenai

University of Illinois at Chicago

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