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Dive into the research topics where Hideaki Hashimoto is active.

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Featured researches published by Hideaki Hashimoto.


212th ECS Meeting | 2008

Metal-Insulator-Gap-Insulator-Semiconductor structure for Biological Sensors

Hideaki Hashimoto; Takaaki Hirokane; Daisuke Kanzaki; Shinichi Urabe; Mizuho Morita

A metal-insulator-gap-insulator-semiconductor sensing device has been characterized in different pH solutions and with different single strand DNA solutions by capacitance-voltage measurements. The capacitance-voltage curves show the difference from pH and the difference from DNA base by hysteresis and flat band voltage shift due to mobile ionic charge in the solution. As the pH decreases, the flat band voltage shift increases in the pH range of 2.7 to 7.0. The hysteresis in the capacitance-voltage curves shows the influence of ionic charge in the solutions and the change of the sensing surface condition. The difference of the flat band voltage shift in the capacitance-voltage curves is related to the mobile ionic charge in the solutions due to pH or DNA molecules.


The Japan Society of Applied Physics | 2005

Photodetector Characteristics of Metal-Oxide-Semiconductor Tunneling Structures with Transparent Conductive Tin Oxide Gate

Motonori Chikamoto; Hideaki Hashimoto; Kosuke Horikoshi; Akihito Shinozaki; Satoru Morita; Kenta Arima; Junichi Uchikoshi; Mizuho Morita

The integration of optics on a silicon (Si) substrate through metal-oxide-semiconductor (MOS) compatible processes is becoming important for optical interconnects, image sensors or monolithic optical biosensors [1]. The MOS tunneling structure has used as a photodetector [2]. However, the indium tin oxide sputtering process has been reported to degrade photodetector performance. In this study, we have examined the photodetector characteristics of MOS diodes with tin oxide (SnO2)/ultrathin silicon dioxide (SiO2)/n-Si structures.


Analytical Sciences | 2009

Metal-insulator-gap-insulator-semiconductor structure for sensing devices.

Takaaki Hirokane; Hideaki Hashimoto; Daisuke Kanzaki; Shinichi Urabe; Kenta Arima; Junichi Uchikoshi; Mizuho Morita


Thin Solid Films | 2006

Photo current through SnO2/SiC/p-Si(100) structures

Syuhei Nishikawa; Hideaki Hashimoto; Motonori Chikamoto; Kosuke Horikoshi; Minoru Aoki; Kenta Arima; Junichi Uchikosi; Mizuho Morita


Surface and Interface Analysis | 2008

Sensing of λDNA solutions by metal‐gap‐semiconductor devices

Takaaki Hirokane; Daisuke Kanzaki; Hideaki Hashimoto; Shinichi Urabe; Kenta Arima; Junichi Uchikoshi; Mizuho Morita


Meeting Abstracts | 2006

Metal-Gap-Semiconductor Sensing Devices for DNA Solutions

Takaaki Hirokane; Hideaki Hashimoto; Daisuke Kanzaki; Shinichi Urabe; Mizuho Morita


The Japan Society of Applied Physics | 2016

Crystalline evaluation of X-ray diffraction and Raman spectroscopy for GaAsN films varied growth temperature and supplied time of raw material and grown by atomic layer epitaxy

Hideaki Hashimoto; Kouji Maeda; Yuuki Yokoyama; Masaru Horikiri; Hidetoshi Suzuki


The Japan Society of Applied Physics | 2015

Light Emission Enhancement from Tensile-Strained Ge-on-Insulator (GOI) by CMP Thinning

Hideaki Hashimoto


The Japan Society of Applied Physics | 2015

High-Q resonant photoluminescence from Ge on Insulator(GOI) microdisk

Hideaki Hashimoto


The Japan Society of Applied Physics | 2007

Steep On-Off Ratio of Photocurrent through Metal-Oxide-Semiconductor Tunneling Structures

Ryuta Yamada; Hideaki Hashimoto; Kenta Arima; Junichi Uchikoshi; Mizuho Morita

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