Hideki Okumura

A 15.5mΩcm 2 -680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing

Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mOmegacm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 mum for the on-resistance reduction. The demonstrated on-resistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 OmeganC and high avalanche current of 175 A/cm2

High aspect ratio deep trench termination (HARDT 2 ) technique surrounding die edge as dielectric wall to improve high voltage device area efficiency

In high voltage power devices, to improve an active device area efficiency, a new edge termination structure that applying high aspect ratio deep trench termination technique is presented. The narrow trench filled with dielectric material acts as not only an electric field relaxing layer but also a reliable hard passivation. By using this technique, the active device area efficiency is maximized up to 96% with high reliability and good dynamic characteristics for 500 to 600 V MOSFETs.