Hidemoto Tomita

Wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications

This paper describes a new wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications. This technology is capable of integrating 35V, 60V, and 80V Nch and Pch LDMOS, 35V BJT, and 6V CMOS devices on a single chip. The devices are completely isolated dielectrically using both deep trench isolation (DTI) and a buried oxide (BOX) layer in a silicon-on-insulator (SOI) wafer for stable operation at high temperatures up to 175°C. The devices were developed using a 0.35μm process. In particular, the LDMOS devices have achieved competitive levels of low Ron∗ A and good SOA.

An SOI based integrated gate-drivers for automotive application

This paper presents our recent development of an ASIC for automotive application. With the progress of automotive electronics, there is increasing need for high temperature and high voltage operation. The ASIC for the EPS applications was integrated with a boost gate driver, three-phase inverter drivers and their components. The ASIC was designed and fabricated using SOI-BiCD process which can operate at the maximum voltage of 80V and at temperature from -40°C to 175°C.