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Dive into the research topics where Hideo Nishiuchi is active.

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Featured researches published by Hideo Nishiuchi.


electronic components and technology conference | 2007

Low-Stress Interconnection for Flip Chip BGA Employing Lead-Free Solder Bump

Masayuki Uchida; Hisashi Ito; Ken Yabui; Hideo Nishiuchi; Takashi Togasaki; Kazuhito Higuchi; Hirokazu Ezawa

Flip chip bonding technology has been widely used for interconnection in high-end logic LSI employing lead-rich solder bumps. Recently, from an environmental issue, it is desired that the lead-rich solder should be replaced by lead-free solder. However, the stress at the interconnection after flip chip bonding reflow cannot be relaxed with lead-free solder bumps because of their poor creep properties. Since the stress causes delamination of the low-k layer under bumps and electrical open errors, the improvement of the solder bump material and the flip chip bonding process have been necessary for stress relaxation. In this study, we investigated the creep properties of Sn-0.7Cu and Sn-3.5Ag bumps by the indentation method. As a result, it was found that the creep properties of Sn-0.7Cu bumps was more suitable for stress relaxation than those of Sn-3.5Ag. Moreover, we confirmed that a low-stress interconnection had been achieved by employing Sn-0.7Cu bumps. The stress at the interconnection was less than the delaminating stress of the low-k layer. In addition, when the flip chip bonding was carried out by the reflow with the post-annealing, in which the temperature was held for a period of time at 200degC during reflow cooling part, the maximum stress in the low-k layer has been reduced by more than 36% in comparison with the low-k delaminating stress. Furthermore, it was found that the stresses at the flip chip joints were relaxed because of the increase of the creep rate which was caused by the reflow with the post-annealing.


Archive | 2012

SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE

Yosuke Akimoto; Yoshiaki Sugizaki; Akihiro Kojima; Kazuhito Higuchi; Hideo Nishiuchi; Susumu Obata


Archive | 2011

Light source apparatus using semiconductor light emitting device

Hideo Nishiuchi; Kazuhito Higuchi; Susumu Obata; Toshiya Nakayama


Archive | 2012

Semiconductor light-emitting device, light-emitting module and method for manufacturing the same

Akiya Kimura; Kazuhito Higuchi; Hideo Nishiuchi; Susumu Obata; Toshiya Nakayama; Yoshiaki Sugizaki; Akihiro Kojima; Yosuke Akimoto


Archive | 2011

SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHT-EMITTING MODULE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE MANUFACTURING METHOD

Akiya Kimura; 晃也 木村; Kazuto Higuchi; 和人 樋口; Hideo Nishiuchi; 秀夫 西内; Susumu Obata; 進 小幡; Toshiya Nakayama; 俊弥 中山; Yoshiaki Sugizaki; 吉昭 杉崎; Akihiro Kojima; 章弘 小島; Yosuke Akimoto; 陽介 秋元


Archive | 2013

SEMICONDUCTOR POWER CONVERTER AND METHOD OF MANUFACTURING THE SAME

Hideo Nishiuchi; Kazuhiro Ueda; Takayuki Masunaga; Naotake Watanabe; Yoshiyuki Shimizu; Takashi Togasaki; Koji Maruno


Archive | 2008

SEMICONDUCTOR DEVICE, CONNECTION CONDUCTOR, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Takahiro Aizawa; Tomohiro Iguchi; Tomoyuki Kitani; Hideo Nishiuchi; Masako Oishi; Hiroshi Tojo; 知洋 井口; 昌子 大石; 智之 木谷; 啓 東條; 隆博 相澤; 秀夫 西内


Archive | 2008

Ultrasonic wave bonding apparatus, and method of manufacturing semiconductor apparatus using the same

Takahiro Aizawa; Tomohiro Iguchi; Tomoyuki Kitani; Hideo Nishiuchi; Masako Oishi; Hiroshi Tojo; 知洋 井口; 昌子 大石; 智之 木谷; 啓 東條; 隆博 相澤; 秀夫 西内


Archive | 2006

Ultrasonic joining device, and method of manufacturing semi-conductor device method

Takahiro Aizawa; Tomoyuki Kitani; Hideo Nishiuchi; Hiroshi Tojo; 智之 木谷; 啓 東條; 隆博 相澤; 秀夫 西内


Archive | 2010

Manufacturing method of semiconductor devices and semiconductor device

Tomoyuki Kitani; Tomohiro Iguchi; Masako Hirahara; Hideo Nishiuchi; Akira Tojo; Taizo Tomioka

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