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Hiraku Ishikawa

NEC

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Publication

Featured researches published by Hiraku Ishikawa.

MRS Proceedings | 1997

The Influence of Fluorine Desorption from ECR-CVD SiOF Film

Tatsuya Usami; Hiraku Ishikawa; Hideki Gomi

The influence of fluorine desorption from SiOF films deposited by biased ECR-CVD was studied. It was found that desorbed F atoms from the SiOF film react with Ti suicide film resulting in forming SiF4 gas. The evolution of SiF4 gas caused the peel-off of the films.

Archive | 2001

Method of manufacturing isolation trenches using silicon nitride liner

Hiraku Ishikawa

Archive | 1995

Method for fabricating an oxynitride film for use in a semiconductor device

Hiraku Ishikawa

Archive | 1996

Semiconductor device having a polysilicon resistor element with increased stability and method of fabricating same

Hiraku Ishikawa; Tatsuya Usami

Archive | 1998

Multilevel interconnection in a semiconductor device and method for forming the same

Hiraku Ishikawa

Archive | 1994

Planarization of insulation film using low wettingness surface

Hiraku Ishikawa

Archive | 1997

Wiring layer in semiconductor device

Hiraku Ishikawa

Archive | 1997

Fluorine doping concentrations in a multi-structure semiconductor device

Tatsuya Usami; Hiraku Ishikawa

Archive | 1996

Method of manufacturing a semiconductor device capable of rapidly forming minute wirings without etching of the minute wirings

Hiraku Ishikawa

Archive | 1998

Semiconductor device using a thermal treatment of the device in a pressurized steam ambient as a planarization technique

Hiraku Ishikawa

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Tatsuya Usami

NEC

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Hideki Gomi

NEC

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