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Dive into the research topics where Hiroshi Mashima is active.

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Featured researches published by Hiroshi Mashima.


Applied Physics Letters | 2006

A technique for uniform generation of very-high-frequency plasma suited to large-area thin-film deposition

Hideo Yamakoshi; Koji Satake; Y. Takeuchi; Hiroshi Mashima; Tatsufumi Aoi

Two very-high-frequency powers between which the phase difference is varying in split of time are supplied to a ladder-shaped electrode through multiple feeding points located at symmetrical positions of the electrode to generate a large-area uniform plasma. Theoretical calculations of the voltage distribution at several phase difference show good agreement with experiments. Plasma emission uniformity within ±15% is demonstrated at 60MHz for the substrate size of 1.4×1.1m, with nitrogen gas of 10Pa.


Thin Solid Films | 2001

Characteristics of VHF excited hydrogen plasmas using a ladder-shaped electrode

Y. Takeuchi; I Kawasaki; Hiroshi Mashima; Masayoshi Murata; Yoshinobu Kawai

Abstract A VHF excited hydrogen plasma was produced with a ladder-shaped electrode whose excitation frequency ranged up to 100 MHz for gas pressures of 40–200 mTorr and the plasma parameters were measured with a Langmuir probe. When the excitation frequency was increased, the electron density increased and the electron temperature decreased. The pressure dependence of the electron temperature at excitation frequencies of 65 and 100 MHz was different from the usual relationship: the electron temperature tended to increase with increasing pressure.


Japanese Journal of Applied Physics | 1997

Production of Inductively Coupled RF Plasma Using a Ladder-Shaped Antenna

Masayoshi Murata; Hiroshi Mashima; Masao Yoshioka; Seiichi Nishida; Syoji Morita; Yoshinobu Kawai

A radiofrequency (RF) excited H 2 plasma is produced using a ladder-shaped antenna which is positioned within a plasma chamber and the fundamental characteristics of the plasma are examined. The potential and current fed to the antenna are almost in phase. The plasma parameters are measured as a function of RF power, gas pressure and gas flow rate with a Langmuir probe. It is found that the plasma density is uniform within ±10% over 300 mm. Furthermore, increases in the frequency of the RF power source lead to increases in the plasma density. When a mesh grid is installed between the antenna and the substrate, the plasma density and the plasma potential decrease.


Japanese Journal of Applied Physics | 1999

Characteristics of Very High Frequency Plasma Produced Using a Ladder-Shaped Electrode

Hiroshi Mashima; Masayoshi Murata; Yoshiaki Takeuchi; Hideo Yamakoshi; Tatsuji Horioka; Tsukasa Yamane; Yoshinobu Kawai

A very high frequency (VHF) excited H2 plasma is produced with a ladder-shaped electrode consisted of 17 rods and the plasma parameters are measured with a movable Langmuir probe. When the discharge frequency (~120 MHz) of the RF power source is increased, the plasma density increases while the electron temperature decreases. The position of the RF connections and the shape of the rod, particularly at higher frequencies are found to affect the distribution of the ion saturation current. The uniformity of the ion saturation current of ±17.2% over a distance of 150 mm is achieved at 120 MHz.


Surface & Coatings Technology | 2003

Uniformity of VHF plasma produced with ladder shaped electrode

Hiroshi Mashima; Yoshiaki Takeuchi; Matsuhei Noda; Masayoshi Murata; Hiroshi Naitou; Ikutaro Kawasaki; Yoshinobu Kawai

The uniformity of very high frequency (VHF) plasma produced with the ladder shaped electrode was examined by changing VHF power feeding positions for different discharge frequencies. It was found that the plasma uniformity strongly depends on how to feed the VHF power. Potential distributions on the ladder shaped electrode were calculated using the moment method and compared with measured spatial profiles of the ion saturation current. It was found that when the number of feeding positions are increased, the plasma uniformity is improved.


Japanese Journal of Applied Physics | 2005

Characteristics of Very High Frequency Plasma Produced with Ladder-Shaped Electrode at High Pressure

Hiromu Takatsuka; Yasuhiro Yamauchi; Yoshiaki Takeuchi; Hiroshi Mashima; Hideaki Yamashita; Yoshinobu Kawai

A very high frequency (VHF) plasma was produced with a ladder-shaped electrode at high pressure and plasma parameters such as the density and temperature of electrons were measured as a function of pressure using a Langmuir probe. A VHF power source with a frequency of 60 MHz was used and the power was up to 450 W. When the pressure was increased from 0.3 Torr to 4 Torr, the plasma density decreased at high pressure, while the electron temperature was approximately 10 eV at high pressure. Furthermore, Langmuir probe characteristics indicated that there exist many negative ions at high pressure.


Surface & Coatings Technology | 2001

Characteristics of VHF-excited SiH4/H2 plasmas using a ladder-shaped electrode

Hiroshi Mashima; Yoshiaki Takeuchi; Masayoshi Murata; Matsuhei Noda; Hiromu Takatsuka; Ikutarou Kawasaki; Yoshinobu Kawai

Abstract A VHF-excited SiH 4 /H 2 plasma was produced using a ladder-shaped electrode. By measuring the plasma parameters with a heated Langmuir probe, the effect of hydrogen dilution on SiH 4 /H 2 VHF plasma characteristics was investigated. The ion density of the SiH 4 /H 2 plasma was higher than that of the H 2 plasma. The electron temperature tended to decrease for high H 2 dilution rate and became minimum at H 2 flow rate/(SiH 4 flow rate+H 2 flow rate)=91%, corresponding to the H 2 dilution rate near the deposition condition of hydrogenated microcrystalline silicon films. Negative ions exist in the SiH 4 /H 2 plasma. The negative ion density increased with increases in the radio frequency power. At the H 2 dilution rate where the negative ions exist, the electron temperature was high approximately 1.5 eV compared with that at other dilution rates.


Archive | 2001

Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus

Hideo Yamakoshi; Koji Satake; Yoshiaki Takeuchi; Hiroshi Mashima; Tatsufumi Aoi; Masayoshi Murata


Archive | 2002

Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus

Keisuke Kawamura; Akemi Takano; Hiroshi Mashima; Hiromu Takatuka; Yasuhiro Yamauti; Yoshiaki Takeuchi; Eishiro Sasakawa


Archive | 2000

Discharge electrode, RF plasma generation apparatus using the same, and power supply method

Hideo Yamakoshi; Kengou Yamaguchi; Masayoshi Murata; Yoshiaki Takeuchi; Yoshikazu Nawata; Koji Satake; Satoshi Kokaji; Shoji Morita; Masatoshi Hisatome; Tatsuji Horioka; Hiroshi Mashima

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Yoshiaki Takeuchi

Mitsubishi Heavy Industries

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Keisuke Kawamura

Mitsubishi Heavy Industries

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Akemi Takano

Mitsubishi Heavy Industries

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Hideo Yamakoshi

Mitsubishi Heavy Industries

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Hiromu Takatsuka

Mitsubishi Heavy Industries

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Koji Satake

Mitsubishi Heavy Industries

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Akira Yamada

Mitsubishi Heavy Industries

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