Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Hirotaka Kohno is active.

Publication


Featured researches published by Hirotaka Kohno.


Proceedings of SPIE | 2010

Latest performance of immersion scanner S620D with the Streamlign platform for the double patterning generation

Hirotaka Kohno; Yuichi Shibazaki; Jun Ishikawa; Junichi Kosugi; Yasuhiro Iriuchijima; Masato Hamatani

Currently, it is considered that one of the most favorable options for the 32 nm HP node is pitch-splitting double patterning, which requires the lithography tool to achieve high productivity and high overlay accuracy simultaneously. In the previous work [1], we described the concepts and the technical features of Nikons immersion scanner based on our newly developed platform, Streamlign, designed for 2nm overlay, 200wph throughput, and short setup time. In this paper, we present the latest actual performance of S620D with the Streamlign platform. Owing to the high repeatability of our new encoder metrology system, Birds Eye Control, and Stream Alignment, S620D achieves less than 2 nm overlay accuracy, less than 15nm focus accuracy, and successful 32 and 22 nm L/S pitchsplitting double patterning exposures. Furthermore, the results at high scanning speed up to 700 mm/s are fine and we have successfully demonstrated over 4,000 wpd throughput, which confirms the potential for high productivity. Nikon has developed this Streamlign as an optimized long life platform based on the upgradable Modular2 structure for upcoming generations. The performance of S620D indicates the possibility of immersion extension down through the 22 nm HP node and beyond.


Proceedings of SPIE | 2012

Immersion and dry ArF scanners enabling 22nm HP production and beyond

Yusaku Uehara; Jun Ishikawa; Hirotaka Kohno; Eiichiro Tanaka; Masanori Ohba; Yuichi Shibazaki

Pattern shrinks using multiple patterning techniques will continue to the 22nm half pitch (HP) node and beyond. The cutting-edge Nikon NSR-S621D immersion lithography tool, which builds upon the technology advancements of the NSR-S620D [1], was developed to satisfy the aggressive requirements for the 22 nm HP node and subsequent generations. The key design challenge for the S621D was to deliver further improvements to product overlay performance and CD uniformity, while also providing increased productivity. Since many different products are made within an IC manufacturing facility, various wafer process-related issues, including the flatness or grid distortion of the processed wafers and exposure-induced heating had to be addressed. Upgrades and enhancements were made to the S620D hardware and software systems to enable the S621D to minimize these process-related effects and deliver the necessary scanner performance. To enable continued process technology advancements, in addition to pattern shrinks at the most critical layers, resolution for less critical layers must also be improved proportionally. As a result, increased demand for dry ArF instead of KrF scanners is expected for less critical layers, and dry ArF tools are already being employed for some of these applications. Further, multiple patterning techniques, such as sidewall double patterning, actually enable use of dry ArF instead of immersion scanners for some critical layers having relaxed pattern resolution requirements. However, in order for this to be successful, the ArF dry tool must deliver overlay performance that is comparable to the latest generation immersion systems. Understanding these factors, an ArF dry scanner that has excellent overlay performance could be used effectively for critical layers and markedly improve cost of ownership (CoO). Therefore, Nikon has developed the NSR-S320F, a new dry ArF scanner also built upon the proven S620D Streamlign platform. By incorporating the Streamlign innovations, sufficient overlay accuracy for critical layers, as well as maximized productivity can be achieved. Furthermore, CoO will be significantly improved, which is the vital benefit when comparing ArF dry vs. immersion scanners. In this paper / presentation the latest S621D and S320F performance data will be introduced.


Archive | 2004

Exposure apparatus and device producing method

Hiroyuki Nagasaka; Hirotaka Kohno; Yasufumi Nishii


Archive | 2004

Exposure method, substrate stage, exposure apparatus and method for manufacturing device

Soichi Owa; Nobutaka Magome; Shigeru Hirukawa; Yoshihiko Kudo; Jiro Inoue; Hirotaka Kohno; Masahiro Nei; Motokatsu Imai; Hiroyuki Nagasaka; Kenichi Shiraishi; Yasufumi Nishii; Hiroaki Takaiwa


Archive | 2008

Exposure method, substrate stage, exposure apparatus, and device manufacturing method

Soichi Owa; Nobutaka Magome; Shigeru Hirukawa; Yoshihiko Kudo; Jiro Inoue; Hirotaka Kohno; Masahiro Nei; Motokatsu Imai; Hiroyuki Nagasaka; Kenichi Shiraishi; Yasufumi Nishii; Hiroaki Takaiwa


Archive | 2004

Stage system, exposure apparatus and exposure method

Yasufumi Nishii; Kenichi Shiraishi; Hirotaka Kohno


Archive | 2004

Stage apparatus, exposure apparatus, and exposure method

Yasufumi Nishii; Kenichi Shiraishi; Hirotaka Kohno


Proceedings of SPIE | 2009

An innovative platform for high-throughput high-accuracy lithography using a single wafer stage

Yuichi Shibazaki; Hirotaka Kohno; Masato Hamatani


Archive | 2004

Stage apparatus, exposure apparatus, and exposure method with recovery device having lyophilic portion

Yasufumi Nishii; Kenichi Shiraishi; Hirotaka Kohno


Proceedings of SPIE, the International Society for Optical Engineering | 2007

Current status of water immersion lithography and prospect of higher index method

Soichi Owa; Katsushi Nakano; Hiroyuki Nagasaka; Hirotaka Kohno; Yasuhiro Ohmura; Martin McCallum

Collaboration


Dive into the Hirotaka Kohno's collaboration.

Researchain Logo
Decentralizing Knowledge