Hirotaka Oosato

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO3 films with thin Al2O3 buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO3/ALD-Al2O3/H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 μm have been investigated. The valence and conduction band offsets of the SD-LaAlO3/ALD-Al2O3 structure are measured by X-ray photoelectron spectroscopy to be 1.1 ± 0.2 and 1.6 ± 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO3 is evaluated to be 4.0 ± 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO3/ALD-Al2O3/H-diamond MOS diode is smaller than 10−8 A cm−2 at gate bias from −4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show p-type channel and complete normally off characteristics with threshold voltages changing from −3.6 ± 0.1 to −5.0 ± 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 μm are −7.5 mA mm−1 and 2.3 ± 0.1 mS mm−1, respectively. The enhancement mode SD-LaAlO3/ALD-Al2O3/H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices.

Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric

HfO2 films have been deposited on hydrogen-terminated diamond (H-diamond) by an atomic layer deposition (ALD) technique at 120 °C. Effect of rapid thermal annealing treatment on electrical properties of Au/Ti/Pd/ALD-HfO2/H-diamond metal-oxide-semiconductor (MOS) diodes has been investigated. The leakage current density of the MOS diode after annealing at 300 °C is as small as 10−8 A/cm2 at gate biases from −5.0 to 4.0 V. The capacitance-voltage curve in the depletion mode of the MOS diode after annealing is much sharper than that of the MOS diode before annealing and close to the theoretical dependence, which indicates the small interface state density. The annealed MOS diode is concluded to be more suitable for the fabrication of field effect transistors.

Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material

A Ta2O5/Al2O3 bilayer gate oxide with a high-dielectric constant (high-k) has been successfully applied to a hydrogenated-diamond (H-diamond) metal-insulator-semiconductor field effect transistor (MISFET). The Ta2O5 layer is prepared by a sputtering-deposition (SD) technique on the Al2O3 buffer layer fabricated by an atomic layer deposition (ALD) technique. The ALD-Al2O3 plays an important role to eliminate plasma damage for the H-diamond surface during SD-Ta2O5 deposition. The dielectric constants of the SD-Ta2O5/ALD-Al2O3 bilayer and single SD-Ta2O5 are as large as 12.7 and 16.5, respectively. The k value of the single SD-Ta2O5 in this study is in good agreement with that of the SD-Ta2O5 on oxygen-terminated diamond. The capacitance–voltage characteristic suggests low interfacial trapped charge density for the SD-Ta2O5/ALD-Al2O3/H-diamond MIS diode. The MISFET with a gate length of 4 µm has a drain current maximum and an extrinsic transconductance of −97.7 mA mm−1 (normalized by gate width) and 31.0 ± 0.1 mS mm−1, respectively. The effective mobility in the H-diamond channel layer is found to be 70.1 ± 0.5 cm2 V−1 s−1.

Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO3 layer and a thin atomic-layer-deposited Al2O3 buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm−1, 13.2 ± 0.1 mS·mm−1, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

Ultraviolet-nanoimprinted packaged metasurface thermal emitters for infrared CO2 sensing

Abstract Packaged dual-band metasurface thermal emitters integrated with a resistive membrane heater were manufactured by ultraviolet (UV) nanoimprint lithography followed by monolayer lift-off based on a soluble UV resist, which is mass-producible and cost-effective. The emitters were applied to infrared CO2 sensing. In this planar Au/Al2O3/Au metasurface emitter, orthogonal rectangular Au patches are arrayed alternately and exhibit nearly perfect blackbody emission at 4.26 and 3.95 μm necessary for CO2 monitoring at the electric power reduced by 31%. The results demonstrate that metasurface infrared thermal emitters are almost ready for commercialization.

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

Enhancement-mode (E-mode) hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated with an Y2O3 oxide insulator grown on the H-diamond directly using an electron beam evaporator. The depletion region of the capacitance-voltage curve for the MOS capacitor shifts to the left hand side relative to 0 V, which indicates the existence of positive charges in the Y2O3 film. There are distinct pinch-off and p-type channel characteristics of the Y2O3/H-diamond MOSFETs. The maximum drain-source current for the MOSFET without interspace between the source/drain and the gate (LS/D-G) is −114.6 mA mm−1. Those for the MOSFETs with LS/D-G are decreased from −11.0 to −2.1 mA mm−1 with the gate length increasing from 3.3 ± 0.1 to 15.4 ± 0.1 μm. Threshold voltages for all the MOSFETs are negative, indicating their E-mode characteristics. Negatively charged adsorbates are one of the necessary conditions for hole accumulation of the H-diamond channel layer, which are possibl...

Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field

We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-µm-wide and 24-µm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe4N having a negative spin polarization.

Metal-insulator transition sustained by Cr-doping in V2O3 nanocrystals

We have obtained monodisperse (V1−xCrx)2O3 nanocrystals with crystal sizes of 21.0 ± 4.1 nm using organic-phase synthesis. The (V1−xCrx)2O3 nanocrystals clearly show the transition from a corundum structured paramagnetic metal to a monoclinic structured antiferromagnetic insulator in contrast to non-doped V2O3 nanocrystals, in which the disappearance of the metal-insulator transition has been observed. We have found that Cr doping works effectively in narrowing the a1g band, which tends to be broadened by nanocrystallization. This result suggests that chemical doping is useful for control of material phase transitions at the nanoscale.

Annealing effects on hydrogenated diamond NOR logic circuits

Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fabrication process and the annealing effect on the electrical properties of the NOR logic circuit are demonstrated. There are distinct logical characteristics for the as-received and 300 °C annealed NOR logic circuits. When one or both input voltages for the E-mode MOSFETs are −10.0 V and “high” signals, output voltages respond 0 V and “low” signals. Instead, when both input voltages are 0 V and “low” signals, output voltage responds −10.0 V and a “high” signal. After annealing at 400 °C, the NOR logical characteristics are damaged, which is possibly attributed to the degradation of the H-diamond MOSFETs.

Electrical detection of magnetic domain wall in Fe4N nanostrip by negative anisotropic magnetoresistance effect

The magnetic structure of the domain wall (DW) of a 30-nm-thick Fe4N epitaxial film with a negative spin polarization of the electrical conductivity is observed by magnetic force microscopy and is well explained by micromagnetic simulation. The Fe4N film is grown by molecular beam epitaxy on a SrTiO3(001) substrate and processed into arc-shaped ferromagnetic nanostrips 0.3 μm wide by electron beam lithography and reactive ion etching with Cl2 and BCl3 plasma. Two electrodes mounted approximately 12 μm apart on the nanostrip register an electrical resistance at 8 K. By changing the direction of an external magnetic field (0.2 T), the presence or absence of a DW positioned in the nanostrip between the two electrodes can be controlled. The resistance is increased by approximately 0.5 Ω when the DW is located between the electrodes, which signifies the negative anisotropic magnetoresistance effect of Fe4N. The electrical detection of the resistance change is an important step toward the electrical detection of current-induced DW motion in Fe4N.