Hoe Chul Kim

Cu Bottom-Up Filling for Through Silicon Vias with Growing Surface Established by the Modulation of Leveler and Suppressor

Galvanostatic bottom-up filling of TSV-like trenches: Choline-based leveler containing two quaternary ammoniums

Degradation of Bis(3-sulfopropyl) Disulfide and Its Influence on Copper Electrodeposition for Feature Filling

Bottom-up Filling of through Silicon Vias Using Galvanostatic Cu Electrodeposition with the Modified Organic Additives

Seed Repair by Electrodeposition in Pyrophosphate Solution for Acid Cu Superfilling

The Influences of Iodide Ion on Cu Electrodeposition and TSV Filling

Electrodeposition of Cu Films with Low Resistivity and Improved Hardness Using Additive Derivatization

Direct Electrodeposition of Cu on Ru-Al2O3 Layer

Voltammetric Observation of Transient Catalytic Behavior of SPS in Copper Electrodeposition—Its Interaction with Cuprous Ion from Comproportionation

Communication—Halide Ions in TEG-Based Levelers Affecting TSV Filling Performance