Hongkyw Choi

Flexible and Transparent Gas Molecule Sensor Integrated with Sensing and Heating Graphene Layers

Graphene leading to high surface-to-volume ratio and outstanding conductivity is applied for gas molecule sensing with fully utilizing its unique transparent and flexible functionalities which cannot be expected from solid-state gas sensors. In order to attain a fast response and rapid recovering time, the flexible sensors also require integrated flexible and transparent heaters. Here, large-scale flexible and transparent gas molecule sensor devices, integrated with a graphene sensing channel and a graphene transparent heater for fast recovering operation, are demonstrated. This combined all-graphene device structure enables an overall device optical transmittance that exceeds 90% and reliable sensing performance with a bending strain of less than 1.4%. In particular, it is possible to classify the fast (≈14 s) and slow (≈95 s) response due to sp(2) -carbon bonding and disorders on graphene and the self-integrated graphene heater leads to the rapid recovery (≈11 s) of a 2 cm × 2 cm sized sensor with reproducible sensing cycles, including full recovery steps without significant signal degradation under exposure to NO2 gas.

Improved Optical Sintering Efficiency at the Contacts of Silver Nanowires Encapsulated by a Graphene Layer

Graphene/silver nanowire (AgNWs) stacked electrodes, i.e., graphene/AgNWs, are fabricated on a glass substrate by air-spray coating of AgNWs followed by subsequent encapsulation via a wet transfer of single-layer graphene (SLG) and multilayer graphene (MLG, reference specimen) sheets. Here, graphene is introduced to improve the optical sintering efficiency of a xenon flash lamp by controlling optical transparency and light absorbing yield in stacked graphene/AgNW electrodes, facilitating the fusion at contacts of AgNWs. Intense pulsed light (IPL) sintering induced ultrafast (<20 ms) welding of AgNW junctions encapsulated by graphene, resulting in approximately a four-fold reduction in the sheet resistance of IPL-treated graphene/AgNWs compared to that of IPL-treated AgNWs. The role of graphene in IPL-treated graphene/AgNWs is further investigated as a passivation layer against thermal oxidation and sulfurization. This work demonstrates that optical sintering is an efficient way to provide fast welding of Ag wire-to-wire junctions in stacked electrodes of graphene/AgNWs, leading to enhanced conductivity as well as superior long-term stability under oxygen and sulfur atmospheres.

Graphene transparent electrode for enhanced optical power and thermal stability in GaN light-emitting diodes.

We report an improvement of the optical power and thermal stability of GaN LEDs using a chemically doped graphene transparent conducting layer (TCL) and a low-resistance contact structure. In order to obtain low contact resistance between the TCL and p-GaN surface, a patterned graphene TCL with Cr/Au electrodes is suggested. A bi-layer patterning method of a graphene TCL was utilized to prevent the graphene from peeling off the p-GaN surface. To improve the work function and the sheet resistance of graphene, CVD (chemical vapor deposition) graphene was doped by a chemical treatment using a HNO(3) solution. The effect of the contact resistance on the power degradation of LEDs at a high injection current level was investigated. In addition, the enhancement of the optical power via an increase in the current spreading and a decrease in the potential barrier of the graphene TCL was investigated.

Metal‐Etching‐Free Direct Delamination and Transfer of Single‐Layer Graphene with a High Degree of Freedom

A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single-layer graphene from a growth substrate, resulting in transferred graphene with nearly zero Dirac voltage due to the absence of residues that would originate from metal etching. Several demonstrations are also presented to show the high degree of freedom and the resulting versatility of this transfer method.

Graphene-based plasmonic photodetector for photonic integrated circuits.

We developed a planar-type graphene-based plasmonic photodetector (PD) for the development of all-graphene photonic-integrated-circuits (PICs). By configuring the graphene plasmonic waveguide and PD structure all-in-one, the proposed graphene PD detects horizontally incident light. The photocurrent profile with opposite polarity is the maximum at graphene-electrode interfaces due to a Schottky-like barrier effect at the interface. The photocurrent amplitude increases with an increase of the graphene-metal interface length. Obtaining time constants of less than 39.7 ms for the time response, we concluded that the proposed graphene PD could be exploited further for application in all graphene-based PICs.

Graphene–Semiconductor Catalytic Nanodiodes for Quantitative Detection of Hot Electrons Induced by a Chemical Reaction

Direct detection of hot electrons generated by exothermic surface reactions on nanocatalysts is an effective strategy to obtain insight into electronic excitation during chemical reactions. For this purpose, we fabricated a novel catalytic nanodiode based on a Schottky junction between a single layer of graphene and an n-type TiO2 layer that enables the detection of hot electron flows produced by hydrogen oxidation on Pt nanoparticles. By making a comparative analysis of data obtained from measuring the hot electron current (chemicurrent) and turnover frequency, we demonstrate that graphenes unique electronic structure and extraordinary material properties, including its atomically thin nature and ballistic electron transport, allow improved conductivity at the interface between the catalytic Pt nanoparticles and the support. Thereby, graphene-based nanodiodes offer an effective and facile way to approach the study of chemical energy conversion mechanisms in composite catalysts with carbon-based supports.

Graphene-based photonic devices for soft hybrid optoelectronic systems

Graphene, a two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has attracted appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. One of these properties, graphenes outstanding tensile strength, allows graphene-based electronic and photonic devices to be flexible, stretchable, and foldable. In this work, we propose a novel platform technology and architecture of graphene-based flexible photonic devices for the development of high-performance flexible devices and components. We investigated the characteristics of the graphene-based plasmonic waveguide for the development of high-performance optical interconnection in flexible human-friendly optoelectronic devices. We concluded that graphene-based photonic devices have huge potential for the development of next-generation human-friendly flexible optoelectronic systems.

Long-term exposure of Sprague Dawley rats to 20 kHz triangular magnetic fields

Purpose: There are only a few reports on harmful effects of 20 kHz sine waves; however, it is essential to comprehensively evaluate the potentially harmful effect of triangular signals at the same frequency. Therefore, in this study, effects of long-term exposure to 20 kHz magnetic fields was examined. Materials and methods: Eighty Sprague Dawley rats were divided into two groups (half male and female in each sham and exposed groups), and they were exposed to 20 kHz triangular magnetic fields at 6.25 μT rms for 8 h/day for 12 or 18 months. Urinalysis [pH, glucose, protein, ketone bodies, red blood cells (RBC), nitrogen, bilirubin, urobilinogen, and specific gravity], hematological analysis (RBC, hemoglobin, hematocrit, thrombocyte count, and leucocyte count), blood biochemistry (total protein, blood urea nitrogen, creatinine, glucose, total bilirubin, total cholesterol, aspartate aminotransferase, alanine aminotransferase, and alkaline phosphatase), and histopathological analysis of organs (thymus, stomach, intestine, liver, kidney, testis, ovary, spleen, brain, heart, and lung) were performed. Results: No significant differences were seen between 20 kHz magnetic-fields exposed rats and sham-exposed rats in body and organ weights, hematological analysis, blood biochemistry, urinalysis data, and histopathological examination, except for the numbers of neutrophiles and lymphocytes in female rats. The number of neutrophiles was significantly increased in female rats on the 12th month after exposure, and the number of lymphocytes in female rats was significantly decreased on the 18th month. Conclusion: Long-term exposure of rats to 20 kHz triangular magnetic fields did not induce any significantly harmful effects, except changes in neutrophiles at 12 months and lymphocytes at 18 months of exposure in female rats. These hematological changes need to be investigated again at a higher intensity of 20 kHz magnetic fields.

Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes.

Carrier multiplication (i.e. generation of multiple electron–hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler’s law for photoemission on metals. The Fowler’s law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity—both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting.

Hybrid nanowire?multilayer graphene film light-emitting sources

We report a versatile hybrid device consisting of one-dimensional ZnS and Te-doped ZnS (ZnS:Te) nanowires (NWs) upon two-dimensional multilayer graphene films (MGFs). Single-crystalline ZnS and ZnS:Te NWs were grown directly on a MGF without a catalyst, and exhibited blue-green and blue emission peaks of ∼ 503 and ∼ 440 nm. A field emission light emitter using ZnS:Te NWs on a MGF was demonstrated, and it indicates excellent contact properties between the NWs and MGFs. The resulting hybrid devices are promising candidates for potential applications as building blocks for the development of highly functional and efficient electroluminescent devices and field-emitting devices including flexible and/or transparent display devices.