Sung-Yool Choi

Switching terahertz waves with gate-controlled active graphene metamaterials

The extraordinary electronic properties of graphene provided the main thrusts for the rapid advance of graphene electronics. In photonics, the gate-controllable electronic properties of graphene provide a route to efficiently manipulate the interaction of photons with graphene, which has recently sparked keen interest in graphene plasmonics. However, the electro-optic tuning capability of unpatterned graphene alone is still not strong enough for practical optoelectronic applications owing to its non-resonant Drude-like behaviour. Here, we demonstrate that substantial gate-induced persistent switching and linear modulation of terahertz waves can be achieved in a two-dimensional metamaterial, into which an atomically thin, gated two-dimensional graphene layer is integrated. The gate-controllable light-matter interaction in the graphene layer can be greatly enhanced by the strong resonances of the metamaterial. Although the thickness of the embedded single-layer graphene is more than six orders of magnitude smaller than the wavelength (<λ/1,000,000), the one-atom-thick layer, in conjunction with the metamaterial, can modulate both the amplitude of the transmitted wave by up to 47% and its phase by 32.2° at room temperature. More interestingly, the gate-controlled active graphene metamaterials show hysteretic behaviour in the transmission of terahertz waves, which is indicative of persistent photonic memory effects.

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

Versatile Carbon Hybrid Films Composed of Vertical Carbon Nanotubes Grown on Mechanically Compliant Graphene Films

[*] Prof. S. O. Kim, D. H. Lee, J. E. Kim, T. H. Han, J. W. Hwang, Prof. S. W. Jeon, Prof. S. H. Hong, Prof. W. J. Lee Department of Materials Science and Engineering, KAIST Daejeon 305-701 (Republic of Korea) E-mail: sangouk.kim@kaist.ac.kr Dr. S. Y. Choi Convergence Components and Materials Laboratory Electronics and Telecommunication Research Institute (ETRI) Daejoen 305-700 (Republic of Korea)

Effective Liquid-Phase Exfoliation and Sodium Ion Battery Application of MoS2 Nanosheets

Two-dimensional (2D) molybdenum disulfide (MoS2) has been taken much attention for various applications, such as catalyst, energy storage, and electronics. However, the lack of effective exfoliation methods for obtaining 2D materials in a large quantity has been one of the technical barriers for the real applications. We report a facile liquid-phase exfoliation method to improve the exfoliation efficiency for single-layer MoS2 sheets in 1-methyl-2-pyrrolidinone (NMP) with a sodium hydroxide (NaOH) assistant. The concentration of the exfoliated MoS2 nanosheets was greatly improved compared to that achieved with conventional liquid-phase exfoliation methods using NMP solvent. We demonstrate stable operation of sodium-ion battery by using the exfoliated MoS2 and MoS2-rGO composite as anode materials.

Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film

Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide (WO2.72) nanorods with average 75nm length and 4nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20to250°C. While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150°C as expected for n-type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100°C. Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric WO2.72.

Patterned selective growth of carbon nanotubes and large field emission from vertically well-aligned carbon nanotube field emitter arrays

We have grown well-aligned carbon nanotube arrays by thermal chemical vapor deposition at 800 °C on Fe nanoparticles deposited by a pulsed laser on a porous Si substrate. We also attain a selective growth of carbon nanotubes on a patterned Fe film on Si substrates in terms of pulsed laser deposition and a liftoff patterning method. Field emission measurement has been made on the carbon nanotube (CNT)-cathode diode device at room temperature and in a vacuum chamber below 10−6 Torr. The distance between the CNT cathode and the anode is 60 μm and is kept through an insulating spacer of polyvinyl film. The measured field emitting area is 4.0×10−5 cm2. Our vertically well-aligned carbon nanotube field emitter arrays on the Si-wafer substrate emit a large current density as high as 80 mA/cm2 at 3 V/μm. The transmission electron microscope image shows that they are multiwalled and bamboolike structures and that the tips of some of the carbon nanotube emitters are open. The open tip structure of our CNTs and thei...

Flexible room-temperature NO2 gas sensors based on carbon nanotubes/reduced graphene hybrid films

We present a flexible room temperature NO2 gas sensor consisting of vertical carbon nanotubes (CNTs)/reduced graphene hybrid film supported by a polyimide substrate. The reduced graphene film alone showed a negligible sensor response, exhibiting abnormal N–P transitions during the initial NO2 injection. A hybrid film, formed by the growth of a vertically aligned CNT array (with CNTs 20 μm in length) on the reduced graphene film surface, exhibited remarkably enhanced sensitivities with weak N–P transitions. The increase in sensitivity was mainly attributed to the high sensitivity of the CNT arrays. The outstanding flexibility of the reduced graphene films ensured stable sensing performances in devices submitted to extreme bending stress.

Flexible Memristive Memory Array on Plastic Substrates

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has recently increased due to their advantages over present rigid electronic systems. Flexible memory is an essential part of electronic systems for data processing, storage, and communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. This paper describes the development of NOR type flexible resistive random access memory (RRAM) with a one transistor-one memristor structure (1T-1M). By integration of a high-performance single crystal silicon transistor with a titanium oxide based memristor, random access to memory cells on flexible substrates was achieved without any electrical interference from adjacent cells. The work presented here can provide a new approach to high-performance nonvolatile memory for flexible electronic applications.

An Electrochemically Reduced Graphene Oxide-Based Electrochemical Immunosensing Platform for Ultrasensitive Antigen Detection

We present an electrochemically reduced graphene oxide (ERGO)-based electrochemical immunosensing platform for the ultrasensitive detection of an antigen by the sandwich enzyme-linked immunosorbent assay (ELISA) protocol. Graphene oxide (GO) sheets were initially deposited on the amine-terminated benzenediazonium-modified indiun tin oxide (ITO) surfaces through both electrostatic and π-π interactions between the modified surfaces and GO. This deposition was followed by the electrochemical reduction of graphene oxide (GO) for preparing ERGO-modified ITO surfaces. These surfaces were then coated with an N-acryloxysuccinimide-activated amphiphilic polymer, poly(BMA-r-PEGMA-r-NAS), through π-π stacking interactions between the benzene ring tethered to the polymer and ERGO. After covalent immobilization of a primary antibody on the polymer-modified surfaces, sandwich ELISA was carried out for the detection of an antigen by use of a horseradish peroxidase (HRP)-labeled secondary antibody. Under the optimized experimental conditions, the developed electrochemical immunosensor exhibited a linear response over a wide range of antigen concentrations with a very low limit of detection (ca. 100 fg/mL, which corresponds to ca. 700 aM). The high sensitivity of the electrochemical immunosensor may be attributed not only to the enhanced electrocatalytic activity owing to ERGO but also to the minimized background current owing to the reduced nonspecific binding of proteins.

Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures

Layered structures of transition metal dichalcogenides stacked by van der Waals interactions are now attracting the attention of many researchers because they have fascinating electronic, optical, thermoelectric, and catalytic properties emerging at the monolayer limit. However, the commonly used methods for preparing monolayers have limitations of low yield and poor extendibility into large-area applications. Herein, we demonstrate the synthesis of large-area MoSe2 with high quality and uniformity by selenization of MoO3 via chemical vapor deposition on arbitrary substrates such as SiO2 and sapphire. The resultant monolayer was intrinsically doped, as evidenced by the formation of charged excitons under low-temperature photoluminescence analysis. A van der Waals heterostructure of MoSe2 on graphene was also demonstrated. Interestingly, the MoSe2/graphene heterostructures show strong quenching of the characteristic photoluminescence from MoSe2, indicating the rapid transfer of photogenerated charge carriers between MoSe2 and graphene. The development of highly controlled heterostructures of two-dimensional materials will further promote advances in the physics and chemistry of reduced dimensional systems and will provide novel applications in electronics and optoelectronics.