Hongtao He

Impurity effect on weak antilocalization in the topological insulator Bi2Te3.

We study the weak antilocalization (WAL) effect in topological insulator Bi(2)Te(3) thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the π Berry phase of the topological surface states. The magnetoconductance data of a 5 nm Bi(2)Te(3) film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator

The epitaxial growth of thin films of the topological insulator Bi2Se3 on nominally flat and vicinal Si(111) substrates was studied. In order to achieve a planar growth front and better quality epifilms, a two-step growth method was adopted for the van der Waals epitaxy of Bi2Se3 to proceed. By using vicinal Si(111) substrate surfaces, the in-plane growth rate anisotropy of Bi2Se3 was exploited in order to achieve single crystalline Bi2Se3 epifilms, in which threading defects and twins are effectively suppressed. The optimization of the growth parameters has resulted in the vicinal Bi2Se3 films showing a carrier mobility of ~2000 cm2 V−1 s−1 and a background doping of ~3×1018 cm−3 of the as-grown layers. Such samples not only show a relatively high magnetoresistance but also show a linear dependence on the magnetic field.

Negative magnetoresistance in Dirac semimetal Cd3As2

A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 1017 cm−3 at 300 K to 2.2 × 1016 cm−3 below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed.

High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films.

Superconducting characteristics of 4-Å carbon nanotube–zeolite composite

We have fabricated nanocomposites consisting of 4-Å carbon nanotubes embedded in the 0.7-nm pores of aluminophosphate-five (AFI) zeolite that display a superconducting specific heat transition at 15 K. MicroRaman spectra of the samples show strong and spatially uniform radial breathing mode (RBM) signals at 510 cm−1 and 550 cm−1, characteristic of the (4, 2) and (5, 0) nanotubes, respectively. The specific heat transition is suppressed at >2 T, with a temperature dependence characteristic of finite-size effects. Comparison with theory shows the behavior to be consistent with that of a type II BCS superconductor, characterized by a coherence length of 14 ± 2 nm and a magnetic penetration length of 1.5 ± 0.7 μm. Four probe and differential resistance measurements have also indicated a superconducting transition initiating at 15 K, but the magnetoresistance data indicate the superconducting network to be inhomogeneous, with a component being susceptible to magnetic fields below 3 T and other parts capable of withstanding a magnetic field of 5 T or beyond.

Two-dimensional superconductivity at the interface of a Bi 2 Te 3 /FeTe heterostructure

The realization of superconductivity at the interface between a topological insulator and an iron-chalcogenide compound is highly attractive for exploring several recent theoretical predictions involving these two new classes of materials. Here we report transport measurements on a Bi2Te3/FeTe heterostructure fabricated via van der Waals epitaxy, which demonstrate superconductivity at the interface, which is induced by the Bi2Te3 epilayer with thickness even down to one quintuple layer, though there is no clear-cut evidence that the observed superconductivity is induced by the topological surface states. The two-dimensional nature of the observed superconductivity with the highest transition temperature around 12 K was verified by the existence of a Berezinsky-Kosterlitz-Thouless transition and the diverging ratio of in-plane to out-plane upper critical field on approaching the superconducting transition temperature. With the combination of interface superconductivity and Dirac surface states of Bi2Te3, the heterostructure studied in this work provides a novel platform for realizing Majorana fermions.

Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films

A linear magnetoresistance (LMR) with strong temperature dependence and peculiar non-symmetry with respect to the applied magnetic field is observed in high-index (221) Bi2Se3 films. Different from the LMR observed in the previous studies which emphasize the role of gapless linear energy dispersion, this LMR is of disorder origin and possibly arises from the electron surface accumulation layer of the film. Besides, an abnormal negative magneto-resistance that shows a non-monotonic temperature dependence and persists even at high temperatures and in strong magnetic fields is also observed.

The role of Zn interstitials in cobalt-doped ZnO diluted magnetic semiconductors

Co-doped ZnO samples Zn1−xCoxO and CoyZn1−yO were prepared by the sol-gel and magnetron sputtering methods, respectively. Although the Co K-edge extended x-ray absorption fine structure spectra show that the doped Co ions are located at the Zn substitutional sites for both Zn1−xCoxO (x≤0.05) and CoyZn1−yO (y≤0.05) samples, magnetic measurements show paramagnetism in Zn1−xCoxO (x≤0.05) and high temperature ferromagnetism in CoyZn1−yO (y≤0.05). An experimental and numerical study of the O K-edge x-ray absorption near-edge structure spectra reveals that the incorporation of the Zn interstitials in the lattice is crucial to the appearance of high temperature ferromagnetism in CoyZn1−yO (y≤0.05) samples.

Resistivity minima and Kondo effect in ferromagnetic GaMnAs films

The temperature dependence of the resistivity of ferromagnetic GaMnAs, as-grown or low-temperature-annealed samples is measured from 2to290K. A resistivity minimum is observed with a corresponding temperature TM around 10K for each sample. Below TM, the resistivity exhibits logarithmic temperature dependence, as αln(T), and α is independent of the external magnetic field up to 9T. Such behavior is explained in terms of the Kondo effect arising from the presence of Mn interstitials in the GaMnAs samples. In addition, a well-defined T-squared dependence of resistivity is found in the temperature range between TM and the Curie temperature (TC), which is attributed to single magnon scattering.

Anisotropic Topological Surface States on High‐Index Bi2Se3 Films

A high-index topological insulator thin film, Bi2 Se3 (221), is grown on a faceted InP(001) substrate by molecular-beam epitaxy (see model in figure (a)). Angle-resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance.