HongYing Wang

Cleaning induced imprint template erosion

Abstract. We studied the erosion and feature stability of fused silica patterns under different template cleaning conditions. The conventional sulfuric acid and hydrogen peroxide mixture (SPM) cleaning is compared with an advanced nonacid process. Spectroscopic ellipsometry optical critical dimension measurements were used to characterize the changes in pattern profile with good sensitivity. This study confirmed the erosion of the silica patterns in the traditional acid-based SPM cleaning mixture (H2SO4+H2O2) at a rate of ∼0.1  nm per cleaning cycle. However, the advanced nonacid cleaning process only showed critical dimension shift of ∼0.01  nm per cleaning. Contamination removal and pattern integrity of sensitive 20-nm features under MegaSonic assisted cleaning was also demonstrated.

Spectroscopic ellipsometry optical critical dimension measurements of templates and imprinted resist for patterned magnetic media applications

The authors have applied spectroscopic ellipsometry optical critical dimension (SE-OCD) measurement to grating templates and imprinted resist patterns with a pitch of 72.6 nm, corresponding to a track density of 350 ktpi (kilotracks per inch) for discreet track recording media. Their experiments indicate that SE-OCD is sensitive in detecting topography features in template profiles. The measurement of imprinted resist pattern is complicated by parameter correlation. Comparison of SE-OCD reported template and imprinted resist profiles can be used to study imprint pattern fidelity.

Controlling template erosion with advanced cleaning methods

We studied the erosion and feature stability of fused silica patterns under different template cleaning conditions. The conventional SPM cleaning is compared with an advanced non-acid process. Spectroscopic ellipsometry optical critical dimension (SE-OCD) measurements were used to characterize the changes in pattern profile with good sensitivity. This study confirmed the erosion of the silica patterns in the traditional acid-based SPM cleaning mixture (H2SO4+H2O2) at a rate of ~0.1nm per cleaning cycle. The advanced non-acid clean process however only showed CD shift of ~0.01nm per clean. Contamination removal & pattern integrity of sensitive 20nm features under MegaSonic assisted cleaning is also demonstrated.