Hsin-Ling Hsu

High-Performance MIM Capacitors Using a High- κ TiZrO Dielectric

We have fabricated high-K Ni/TiZrO/TaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3 x 10 -8 A/cm 2 at -1 V was obtained for a 18 fF/μm 2 capacitance density. For a 5.5 fF/μm 2 capacitance density device, a small voltage coefficient of capacitance a of 105 ppm/V 2 and temperature coefficient of capacitance of 156 ppm/°C were measured.

High- κ TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment

In this study, we successfully fabricated high-κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400°C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of — 17 fF/μm 2 at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-α) of 866 ppm/V 2 at a 10.3 fF/μm 2 density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher-κ TiCeO dielectrics, and a high work-function Ir metal.

Synthesis, Pore Morphology, and Dielectric Property of Mesoporous Low-k Material PSMSQ Using a Reactive High-Temperature Porogen, TEPSS

For porous low-k materials using a templating porogen, one of the challenges is the tendency of porogens to aggregate, leading to large pore size/distribution and exacerbated aggregation at higher porosity. Although reactive porogen is effective to limit porogen aggregation and reduce pore size [1], little work explores the reactive high-temperature porogen for the late-porogen removal integration scheme. In this study, a reactive high-temperature porogen, triethoxy(polystyrene)silane (TEPSS) was synthesized by atom transfer radical polymerization (ATRP) [2] to obtain tight molecular weight (MW) distribution, then grafted onto the poly(methyl-silsesquioxane) (MSQ) matrix to circumvent the phase separation between matrix and porogen in the conventional hybrid approach. Upon the removal of polystyrene by thermal decomposition, uniformly distributed, spherical pores have been successfully achieved for mesoporous low-k MSQ films without porogen aggregation at high porosity up to 40% (k=2.37).

Improved Lower Electrode Oxidation of High-k TiCeO Metal-Insulator-Metal Capacitors by Using Dual Plasma Treatment

We have fabricated high-k Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interface layer to reduce the degradation of capacitor performance under 400oC PDA. A low leakage current of 1.7x10-7 A/cm2 at -1 V and capacitance density of ~18 fF/μm2 at 1 MHz were obtained at 21nm TiCeO MIM devices; moreover, a 37 nm-thick TiCeO film has a capacitance density of 11 fF/um2, which gives a k value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-k. TiCeO dielectric and a high work-function Ir metal