Hsu-Hao Chang

Electrically-pumped compact hybrid silicon microring lasers for optical interconnects

We demonstrate an electrically-pumped hybrid silicon microring laser fabricated by a self-aligned process. The compact structure (D = 50 microm) and small electrical and optical losses result in lasing threshold as low as 5.4 mA and up to 65 degrees C operation temperature in continuous-wave (cw) mode. The spectrum is single mode with large extinction ratio and small linewidth observed. Application as on-chip optical interconnects is discussed from a system perspective.

1310nm silicon evanescent laser.

An electrically pumped 1310 nm silicon evanescent laser (SEL) is demonstrated utilizing the hybrid silicon evanescent waveguide platform. The SEL operates continuous wave (C.W.) up to 105degC with a threshold current of 30 mA and a maximum output power of 5.5 mW.

Photonic Integration on the Hybrid Silicon Evanescent Device Platform

This paper reviews the recent progress of hybrid silicon evanescent devices. The hybrid silicon evanescent device structure consists of III-V epitaxial layers transferred to silicon waveguides through a low-temperature wafer bonding process to achieve optical gain, absorption, and modulation efficiently on a silicon photonics platform. The low-temperature wafer bonding process enables fusion of two different material systems without degradation of material quality and is scalable to wafer-level bonding. Lasers, amplifiers, photodetectors, and modulators have been demonstrated with this hybrid structure and integration of these individual components for improved optical functionality is also presented. This approach provides a unique way to build photonic active devices on silicon and should allow application of silicon photonic integrated circuits to optical telecommunication and optical interconnects.

Double-Stage Taper for Coupling Between SOI Waveguides and Single-Mode Fiber

A low-loss polarization-independent and wavelength-insensitive mode converter is demonstrated for coupling between standard single-mode fiber (SMF) and 1.5-¿m-thick silicon waveguides. This mode converter consists of a double-stage taper fabricated using planar processing. Optical testing results show facet loss of approximately -1.5 dB/facet, for TE and TM polarizations across a wide wavelength range.

Efficient Mode Converter for Coupling between Fiber and Micrometer Size Silicon Waveguides

A low-loss polarization independent mode converter for coupling standard single mode fiber to a silicon chip is presented. For a micrometer size silicon waveguide, we demonstrate a coupling loss of 1-1.5 dB/facet.

Integrated Hybrid Lasers and Amplifiers on a Silicon Platform

An overview is given of the hybrid AlGaInAs-silicon platform where InP active and silicon passive components are integrated using wafer bonding. Hybrid optical amplifiers and lasers demonstrate the functionality this platform bring silicon photonics.

A 40 GHz Mode Locked Silicon Evanescent Laser

We demonstrate a mode locked silicon evanescent laser (ML-SEL) which generates a 39.2 GHz pulse stream without requiring any RF drive signal. This passively mode locked laser outputs 3.7 ps pulses which are nearly transform limited and have 18 dB extinction ratio.

A compact electrically-pumped hybrid silicon microring laser

A compact electrically-pumped hybrid silicon microring laser is realized on a hybrid silicon platform. A simplified, self-aligned, deep-etch process is developed to result in low-loss resonator with a high quality factor Q≫15,000. Small footprint (resonator diameter=50 µm), electrical and optical losses all contribute to lasing threshold as low as 5.4 mA and up to 65 °C operation temperature in continuous-wave (cw) mode. Outcoupling- and bus waveguide width-dependent studies are conducted for optimizing device structure. A simple qualitative study in current-voltage (IV) characteristic shows that dry etching through active region leads to ≪3× more leakage current at the same reverse bias than wet etch counterpart. It indicates a relatively good interface with tolerable surface recombination from deep dry etch. The spectrum is single mode with large extinction ratio (≫40 dB) and small linewidth (≪0.04 nm) observed. The unique bistability operation in ring resonator structure is also demonstrated.

Hybrid silicon lasers: Integration of III–V and silicon photonics using wafer bonding

This talk will give an overview of the hybrid silicon laser device platform which heterogeneously integrates InP with SOI to fabricate silicon photonic chips with integrated lasers. Challenges associated with this integration will be discussed as well as examples of integrating hybrid silicon lasers with other silicon photonic components on the path to achieving a terabit silicon photonic link.

1310nm Silicon Evanescent Laser

An electrically pumped 1310 nm silicon evanescent laser (SEL) is demonstrated utilizing the hybrid silicon evanescent waveguide platform. The SEL operates continuous wave (C.W.) up to 105degC with a threshold current of 30 mA and a maximum output power of 5.5 mW.