Alexander W. Fang

150 mm InP-to-Silicon Direct Wafer Bonding for Silicon Photonic Integrated Circuits

A low-temperature direct wafer bonding process was developed to realize the high-quality transfer of the largest (150 mm in diameter) available InP-based epitaxial structure onto the prepatterned silicon-on-insulator (SOI) substrate. Over 95% bonding yield and a void free bonding interface was obtained. A InGaAsP multiple quantum-well (MQW) diode laser structure is well preserved after bonding, as indicated by the high-resolution X-ray diffraction (XRD) rocking curve measurement. XRD omega scans of the bonded wafers over a 9×9 matrix revealed a small bowing of only 64.12 µm, showing that the III-V epitaxial surface is relatively flat with low-strain. The first InGaAsP-based MQW hybrid Si evanescent racetrack ring lasers have been realized, showing comparable performance as previously InAlGaAs ring lasers.

High Speed Modulation of Hybrid Silicon Evanescent Lasers

High speed modulation results and analysis of hybrid silicon evanescent lasers is described. It should be possible to achieve a 3dB-bandwidth over 50 GHz and a data rate of 50 Gbit/s.

Hybrid Silicon-AlGaInAs Lasers and Optical Modulators

A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress on efforts to make lasers on or in silicon and on silicon optical modulators.

(Invited) review of the state-of-the-art in silicon photonics and its potential for aerospace applications

Silicon based photonic integration technology has advanced significantly in the last several years and it is maturing to the point that it can bring unique opportunities for avionics systems to utilize photonics.

Distributed Feedback and Mode Locked Silicon Evanescent Lasers (Invited)

University of California Santa Barbara, ECE Department Santa Barbara, CA 93106-9560, USA Phone: +1-805-893-4883, E-mail: awfang@ece.ucsb.edu (Invited)