Huanjun Chen

Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy

Formation of heterojunctions of transition metal dichalcogenides (TMDs) stimulates wide interest in new device physics and technology by tuning optical and electronic properties of TMDs. TMDs heterojunctions are of scientific and technological interest for exploration of next generation flexible electronics. Herein, we report on a two-step epitaxial ambient-pressure CVD technique to construct in-plane MoS2-WS2 heterostructures. The technique has the potential to artificially control the shape and structure of heterostructures or even to be more potentially extendable to growth of TMD superlattice than that of one-step CVD technique. Moreover, the unique MX2 heterostructure with monolayer MoS2 core wrapped by multilayer WS2 is obtained by the technique, which is entirely different from MX2 heterostructures synthesized by existing one-step CVD technique. Transmission electron microscopy, Raman and photoluminescence mapping studies reveal that the obtained heterostructure nanosheets clearly exhibit the modulated structural and optical properties. Electrical transport studies demonstrate that the special MoS2 (monolayer)/WS2 (multilayer) heterojunctions serve as intrinsic lateral p-n diodes and unambiguously show the photovoltaic effect. On the basis of this special heterostructure, depletion-layer width and built-in potential, as well as the built-in electric field distribution, are obtained by KPFM measurement, which are the essential parameters for TMD optoelectronic devices. With further development in future studies, this growth approach is envisaged to bring about a new growth platform for two-dimensional atomic crystals and to create unprecedented architectures therefor.

Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy

Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures

A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2 /Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2 /Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.

Janus magneto-electric nanosphere dimers exhibiting unidirectional visible light scattering and strong electromagnetic field enhancement.

Steering incident light into specific directions at the nanoscale is very important for future nanophotonics applications of signal transmission and detection. A prerequisite for such a purpose is the development of nanostructures with high-efficiency unidirectional light scattering properties. Here, from both theoretical and experimental sides, we conceived and demonstrated the unidirectional visible light scattering behaviors of a heterostructure, Janus dimer composed of gold and silicon nanospheres. By carefully adjusting the sizes and spacings of the two nanospheres, the Janus dimer can support both electric and magnetic dipole modes with spectral overlaps and comparable strengths. The interference of these two modes gives rise to the narrow-band unidirectional scattering behaviors with enhanced forward scattering and suppressed backward scattering. The directionality can further be improved by arranging the dimers into one-dimensional chain structures. In addition, the dimers also show remarkable electromagnetic field enhancements. These results will be important not only for applications of light emitting devices, solar cells, optical filters, and various surface enhanced spectroscopies but also for furthering our understanding on the light-matter interactions at the nanoscale.

Electrochromic properties of WO3 nanowire films and mechanism responsible for the near infrared absorption

WO3 nanowire films were prepared by thermal evaporation. The electrochromic properties and relative near infrared absorption mechanism of the films in detail are investigated by electrochemistry, ultraviolet–visible–near infrared spectroscopy, x-ray diffraction spectroscopy, and some theoretical approaches. The studies indicate that WO3 nanowire films show excellent electrochromic properties, including a rapid response time (∼3s) and a large contrast ratio between the bleached and the colored states. These improvements are due to the loose structure of the films and the small diameter of a single nanowire. It is also shown that a lithium tungsten bronze structure appears when the film is colored, causing two broad absorption bands centering around 920 and 1800nm. A calculation including the Urbach effect, cation-polaron absorption and large polaron absorption was carried out to interpret the absorbance. A brief discussion of the discrepancy of the transmittance spectrum in the region λ>800nm between the n...

Nanoscale Insights into the Hydrogenation Process of Layered α-MoO3

The hydrogenation process of the layered α-MoO3 crystal was investigated on a nanoscale. At low hydrogen concentration, the hydrogenation can lead to formation of HxMoO3 without breaking the MoO3 atomic flat surface. For hydrogenation with high hydrogen concentration, hydrogen atoms accumulated along the <101> direction on the MoO3, which induced the formation of oxygen vacancy line defects. The injected hydrogen atoms acted as electron donors to increase electrical conductivity of the MoO3. Near-field optical measurements indicated that both of the HxMoO3 and oxygen vacancies were responsible for the coloration of the hydrogenated MoO3, with the latter contributing dominantly. On the other hand, diffusion of hydrogen atoms from the surface into the body of the MoO3 will encounter a surface diffusion energy barrier, which was for the first time measured to be around 80 meV. The energy barrier also sets an upper limit for the amount of hydrogen atoms that can be bound locally inside the MoO3 via hydrogenation. We believe that our findings has provided a clear picture of the hydrogenation mechanisms in layered transition-metal oxides, which will be helpful for control of their optoelectronic properties via hydrogenation.

Tailoring the thermal and electrical transport properties of graphene films by grain size engineering

Understanding the influence of grain boundaries (GBs) on the electrical and thermal transport properties of graphene films is essentially important for electronic, optoelectronic and thermoelectric applications. Here we report a segregation–adsorption chemical vapour deposition method to grow well-stitched high-quality monolayer graphene films with a tunable uniform grain size from ∼200 nm to ∼1 μm, by using a Pt substrate with medium carbon solubility, which enables the determination of the scaling laws of thermal and electrical conductivities as a function of grain size. We found that the thermal conductivity of graphene films dramatically decreases with decreasing grain size by a small thermal boundary conductance of ∼3.8 × 109 W m−2 K−1, while the electrical conductivity slowly decreases with an extraordinarily small GB transport gap of ∼0.01 eV and resistivity of ∼0.3 kΩ μm. Moreover, the changes in both the thermal and electrical conductivities with grain size change are greater than those of typical semiconducting thermoelectric materials.

Room-Temperature Strong Light–Matter Interaction with Active Control in Single Plasmonic Nanorod Coupled with Two-Dimensional Atomic Crystals

Strong light-matter coupling manifested by Rabi splitting has attracted tremendous attention due to its fundamental importance in cavity quantum-electrodynamics research and great potentials in quantum information applications. A prerequisite for practical applications of the strong coupling in future optoelectronic devices is an all-solid-state system exhibiting room-temperature Rabi splitting with active control. Here we realized such a system in heterostructure consisted of monolayer WS2 and an individual plasmonic gold nanorod. By taking advantages of the small mode volume of the nanorod and large transition dipole moment of the WS2 exciton, giant Rabi splitting energies of 91-133 meV can be achieved at ambient conditions, which only involve a small number of excitons. The strong light-matter coupling can be dynamically tuned either by electrostatic gating or temperature scanning. These findings can pave the way toward active nanophotonic devices operating at room temperature.

Characteristics of a silicon nanowires/PEDOT:PSS heterojunction and its effect on the solar cell performance.

The interfacial energy-level alignment of a silicon nanowires (SiNWs)/PEDOT:PSS heterojunction is investigated using Kelvin probe force microscopy. The potential difference and electrical distribution in the junction are systematically revealed. When the PEDOT:PSS layer is covered at the bottom of the SiNW array, an abrupt junction is formed at the interface whose characteristics are mainly determined by the uniformly doped Si bulk. When the PEDOT:PSS layer is covered on the top, a hyperabrupt junction localized at the top of the SiNWs forms, and this characteristic depends on the surface properties of the SiNWs. Because the calculation shows that the absorption of light from the SiNWs and the Si bulk are equally important, the bottom-coverage structure leads to better position matching between the depletion and absorption area and therefore shows better photovoltaic performance. The dependence of JSC and VOC on the junction characteristic is discussed.

Highly Confined and Tunable Hyperbolic Phonon Polaritons in Van Der Waals Semiconducting Transition Metal Oxides

2D van der Waals (vdW) layered polar crystals sustaining phonon polaritons (PhPs) have opened up new avenues for fundamental research and optoelectronic applications in the mid-infrared to terahertz ranges. To date, 2D vdW crystals with PhPs are only experimentally demonstrated in hexagonal boron nitride (hBN) slabs. For optoelectronic and active photonic applications, semiconductors with tunable charges, finite conductivity, and moderate bandgaps are preferred. Here, PhPs are demonstrated with low loss and ultrahigh electromagnetic field confinements in semiconducting vdW α-MoO3 . The α-MoO3 supports strong hyperbolic PhPs in the mid-infrared range, with a damping rate as low as 0.08. The electromagnetic confinements can reach ≈λ0 /120, which can be tailored by altering the thicknesses of the α-MoO3 2D flakes. Furthermore, spatial control over the PhPs is achieved with a metal-ion-intercalation strategy. The results demonstrate α-MoO3 as a new platform for studying hyperbolic PhPs with tunability, which enable switchable mid-infrared nanophotonic devices.