Jinxiu Wen

Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy

Formation of heterojunctions of transition metal dichalcogenides (TMDs) stimulates wide interest in new device physics and technology by tuning optical and electronic properties of TMDs. TMDs heterojunctions are of scientific and technological interest for exploration of next generation flexible electronics. Herein, we report on a two-step epitaxial ambient-pressure CVD technique to construct in-plane MoS2-WS2 heterostructures. The technique has the potential to artificially control the shape and structure of heterostructures or even to be more potentially extendable to growth of TMD superlattice than that of one-step CVD technique. Moreover, the unique MX2 heterostructure with monolayer MoS2 core wrapped by multilayer WS2 is obtained by the technique, which is entirely different from MX2 heterostructures synthesized by existing one-step CVD technique. Transmission electron microscopy, Raman and photoluminescence mapping studies reveal that the obtained heterostructure nanosheets clearly exhibit the modulated structural and optical properties. Electrical transport studies demonstrate that the special MoS2 (monolayer)/WS2 (multilayer) heterojunctions serve as intrinsic lateral p-n diodes and unambiguously show the photovoltaic effect. On the basis of this special heterostructure, depletion-layer width and built-in potential, as well as the built-in electric field distribution, are obtained by KPFM measurement, which are the essential parameters for TMD optoelectronic devices. With further development in future studies, this growth approach is envisaged to bring about a new growth platform for two-dimensional atomic crystals and to create unprecedented architectures therefor.

Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy

Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures

A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2 /Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2 /Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.

Tailoring the thermal and electrical transport properties of graphene films by grain size engineering

Understanding the influence of grain boundaries (GBs) on the electrical and thermal transport properties of graphene films is essentially important for electronic, optoelectronic and thermoelectric applications. Here we report a segregation–adsorption chemical vapour deposition method to grow well-stitched high-quality monolayer graphene films with a tunable uniform grain size from ∼200 nm to ∼1 μm, by using a Pt substrate with medium carbon solubility, which enables the determination of the scaling laws of thermal and electrical conductivities as a function of grain size. We found that the thermal conductivity of graphene films dramatically decreases with decreasing grain size by a small thermal boundary conductance of ∼3.8 × 109 W m−2 K−1, while the electrical conductivity slowly decreases with an extraordinarily small GB transport gap of ∼0.01 eV and resistivity of ∼0.3 kΩ μm. Moreover, the changes in both the thermal and electrical conductivities with grain size change are greater than those of typical semiconducting thermoelectric materials.

Room-Temperature Strong Light–Matter Interaction with Active Control in Single Plasmonic Nanorod Coupled with Two-Dimensional Atomic Crystals

Strong light-matter coupling manifested by Rabi splitting has attracted tremendous attention due to its fundamental importance in cavity quantum-electrodynamics research and great potentials in quantum information applications. A prerequisite for practical applications of the strong coupling in future optoelectronic devices is an all-solid-state system exhibiting room-temperature Rabi splitting with active control. Here we realized such a system in heterostructure consisted of monolayer WS2 and an individual plasmonic gold nanorod. By taking advantages of the small mode volume of the nanorod and large transition dipole moment of the WS2 exciton, giant Rabi splitting energies of 91-133 meV can be achieved at ambient conditions, which only involve a small number of excitons. The strong light-matter coupling can be dynamically tuned either by electrostatic gating or temperature scanning. These findings can pave the way toward active nanophotonic devices operating at room temperature.

Molybdenum Nanoscrews: A Novel Non-coinage-Metal Substrate for Surface-Enhanced Raman Scattering

For the first time, Mo nanoscrew was cultivated as a novel non-coinage-metal substrate for surface-enhanced Raman scattering (SERS). It was found that the nanoscrew is composed of many small screw threads stacking along its length direction with small separations. Under external light excitation, strong electromagnetic coupling was initiated within the gaps, and many hot-spots formed on the surface of the nanoscrew, which was confirmed by high-resolution scanning near-field optical microscope measurements and numerical simulations using finite element method. These hot-spots are responsible for the observed SERS activity of the nanoscrews. Raman mapping characterizations further revealed the excellent reproducibility of the SERS activity. Our findings may pave the way for design of low-cost and stable SERS substrates.Graphical AbstractMo nanoscrews are for the first time cultivated as a novel type of SERS substrate. The SERS activity is originated from the electromagnetic field enhancements on the individual Mo nanoscrew, which is corroborated by single-particle optical characterizations

Tetragonal Single-Crystalline Boron Nanowires with Strong Anisotropic Light Scattering Behaviors and Photocurrent Response in Visible-Light Regime

Boron is a narrow-bandgap (1.56 eV) semiconductor with high melting-point, low-density, large Youngs modulus and very high refractive index (3.03) close to silicon. Therefore, boron nanostructures is expected to possess strong visible-light scattering properties. However, photonic and optoelectronic properties of the boron nanostructures are seldom studied until now. In this paper, we have successfully prepared single-crystalline boron nanowire (BNW) arrays with high-density on Si substrate. All the BNWs are found to possess strong light-scattering behaviors in the visible regime. Most of all, the scattered light is found to polarize along the longitudinal direction of the nanowire. They also have excellent second-harmonic generation (SHG) properties under ultrafast laser irradiation. Further optoelectronic measurements show that an individual BNW device exhibits notable photocurrent responses in the visible-light range at ambient conditions, which can be attributed to the strong coupling effect between individual BNW and the visible light. The maximum photoresponsivity of an individual BNW can reach up to 12.12 A W-1 at a voltage of 10 V, and the response time is only 18 ms. Therefore, it unveils that the BNWs have a promising future in visible-light communications and detections.

Room-temperature strong coupling between dipolar plasmon resonance in single gold nanorod and two-dimensional excitons in monolayer WSe2

All-solid-state strong coupling systems with large vacuum Rabi splitting energy have great potential applications in future quantum information technologies, such as quantum manipulations, quantum information storage and processing, and ultrafast optical switches. Monolayer transition metal dichalcogenides (TMDs) have recently been explored as excellent candidates for the observation of solid-state strong coupling phenomena. In this work, from both experimental and theoretical aspects, we explored the strong coupling effect by integrating an individual plasmonic gold nanorod into the monolayer tungsten diselenide (WSe2). Evident anti-crossing behavior was observed from the coupled energy diagram at room temperature; a Rabi splitting energy of 98 meV was extracted.