Hung-Wei Tsai

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

CuOx nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nanocrystals in the partially oxidized nanowires. The detailed resistive switching characteristics of CuOx nanowire systems have been investigated and possible switching mechanisms are systematically proposed based on the microstructural and chemical analysis via transmission electron microscopy.

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

A special chip for direct and real-time observation of resistive changes, including set and reset processes based on Au/ZnO/Au system inside a transmission electron microscope (TEM), was designed. A clear conducting bridge associated with the migration of Au nanoparticles (NPs) inside a defective ZnO film from anode to cathode could be clearly observed by taking a series of TEM images, enabling a dynamic observation of switching behaviors. A discontinuous region (broken region) nearby the cathode after reset process was observed, which limits the flow of current, thus a high resistance state, while it will be reconnected to switch the device from high to low resistance states through the migration of Au NPs after set process. Interestingly, the formed morphology of the conducting bridge, which is different from the typical formation of a conducting bridge, was observed. The difference can be attributed to the different diffusivities of cations transported inside the dielectric layer, thereby significantly influencing the morphology of the conducting path. The current TEM technique is quite unique and informative, which can be used to elucidate the dynamic processes in other devices in the future.

Analyses and applications of single scan dose profiles in computed tomography

Comprehensive analyses and measurements of computed tomography (CT) single-scan dose profiles were performed for several scanners and operating conditions. Measurements were made using two types of thermoluminescent dosimeters, LiF:Mg,Cu,P and CaSO4:Dy, and two CT dosimetry phantoms, head and body. Analyses of CT single-scan dose profiles were made in terms of a Gaussian function for primary radiation and a Lorentzian function for scattered radiation. This function was used to investigate several common descriptions of the CT dose, including the computed tomography dose index (CTDI) and the multiple scan average dose. The relative percentage of scatter versus primary radiation to the contribution of CTDI at the central and peripheral locations was determined and analyzed. The correlation between CTDI of thermoluminescent dosimeter measurements and pencil-shaped ionization chamber measurements was determined. A method for estimating organ dose from CT was developed and compared to organ-dose estimates from Monte Carlo simulations.

Determination of guidance levels of dose for diagnostic radiography in Taiwan

The International Atomic Energy Agency has recommended guidance levels of dose for diagnostic radiography for a typical adult patient. These levels were intended to act as thresholds to trigger investigations or corrective actions in ensuring optimized protection of patients and maintaining appropriate levels of good practice. Since guidance levels should be derived from wide scale surveys of exposure factors performed in individual hospitals, a national survey was conducted recently in Taiwan to collect these factors for the most frequent radiographic procedures. A total of 276 completed questionnaires were received and analyzed. In the questionnaire, respondents were asked to check those projections that were routinely performed in their department and to report machine data, patient data, output measurements, and technical factors including kVp, mAs, focus-to-film distance, table-to-film distance, aluminum filtration, and focal spot size. Based on the survey data, entrance skin exposures in air, i.e., free air exposures at the point of intersection of the x-ray central beam with the entrance surface of the patient, were estimated using the RADCOMP program. Entrance surface doses to air and tissue with backscatter were then evaluated by the application of the exposure-dose conversion factor and the backscatter factor obtained from TLD measurements and Monte Carlo simulations. Guidance levels were determined from survey results on the entrance surface dose based on optimization considerations involving the cost-effectiveness analysis. Except for chest PA and LAT and skull LAT procedures, all guidance levels derived in this work are less than those recommended by the International Atomic Energy Agency. Survey data and guidance levels were provided to the national authorities to help them develop quality control and radiation protection programs for medical exposures.

Recent developments in the synthesis of nanostructured chalcopyrite materials and their applications: a review

Chalcopyrite materials, in particular CuInS2 (CIS), CuInSe2 (CISe) and Cu(In,Ga)Se2 (CIGS), have drawn significant attention recently owing to their highly advantageous optoelectronic properties, making them well suited to their best known application in solar cells. In this review, we will introduce some of the recent advances in the field of chalcopyrite nanostructure synthesis and discuss the further benefits these nanostructured materials offer over their thin-film and bulk counterparts. We will highlight a number of synthesis methods that utilize both physical and chemical based techniques, encompassing vacuum, solvothermal and solution based approaches. The conclusion will briefly highlight some of the challenges that we are yet to overcome, whilst reiterating the benefits that nanostructured chalcopyrites have to offer.

Low temperature synthesis of copper telluride nanostructures: phase formation, growth, and electrical transport properties

We propose a low cost solution-based approach to synthesize various low dimensional copper telluride (Cu-Te) nanostructures. By precisely controlling different ethylenediamine (EDA) ratios in a reaction solution, we are able to control the phases and morphologies of Cu-Te nanostructures from Te/Cu core–shell nanowires at a low volume fraction of EDA <8%, Cu3Te2 nanowires at the volume fraction of EDA between 8% and 24%, Cu2Te nanowires and nanobelts at the volume fraction of EDA between 24% and 48%, to Cu2Te/Cu core–shell nanobelts at the volume fraction of EDA over 48%. The formation mechanism is attributed to varied tendency of different coordinative copper complexes. In situ heating XRD results and TEM observations of the Cu2Te nanowires reveal the phase transition from hexagonal P3m1, hexagonal P6/mmm to cubic structure at annealing temperatures of 25 °C, 500 °C to 600 °C, respectively. The lack of back gate dependence demonstrates the metallic feature of Te/Cu core–shell nanowire while obvious p-type behavior can be found for Cu2Te nanowire with an on/off ratio of ∼104 and the field effect hole mobility of ∼18 cm2 V−1 s−1. These Cu-Te nanostructures exhibit controllable transport behaviors from metallic to semiconducting natures with different EDA volume fractions and have promising applications in electronics such as nonvolatile memory, photodetectors, and solar cells.

Large-scale micro- and nanopatterns of Cu(In,Ga)Se2 thin film solar cells by mold-assisted chemical-etching process.

A reactive mold-assisted chemical etching (MACE) process through an easy-to-make agarose stamp soaked in bromine methanol etchant to rapidly imprint larger area micro- and nanoarrays on CIGS substrates was demonstrated. Interestingly, by using the agarose stamp during the MACE process with and without additive containing oil and triton, CIGS microdome and microhole arrays can be formed on the CIGS substrate. Detailed formation mechanisms of microstructures and the chemical composition variation after the etching process were investigated. In addition, various microand nanostructures were also demonstrated by this universal approach. The microstructure arrays integrated into standard CIGS solar cells with thinner thickness can still achieve an efficiency of 11.22%, yielding an enhanced efficiency of ∼18% compared with that of their planar counterpart due to an excellent absorption behavior confirmed by the simulation results, which opens up a promising way for the realization of high-efficiency micro- or nanostructured thin-film solar cells. Finally, the complete dissolution of agarose stamp into hot water demonstrates an environmentally friendly method by the mold-assisted chemical etching process through an easy-to-make agarose stamp.

Fabrication of large-scale single-crystal bismuth telluride (Bi2Te3) nanosheet arrays by a single-step electrolysis process

Nanolizing of thermoelectric materials is one approach to reduce the thermal conductivity and hence enhance the figure of merit. Bismuth telluride (Bi₂Te₃)-based materials have excellent figure of merit at room temperature. For device applications, precise control and rapid fabrication for the nanostructure of thermoelectric materials are essential issues. In the present study, we demonstrate a one-step electrolysis process to directly form Bi₂Te₃ nanosheet arrays (NSAs) on the surface of bulk Bi₂Te₃ with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi₂Te₃ in composition are 399.8 nm and 137.34 μΩ m, respectively. The formation mechanism of NSAs has been proposed. A 1.12% efficiency of quantum dot-sensitized solar cells with Bi₂Te₃ NSAs for counter electrode has been demonstrated, indicating that Bi₂Te₃ NSAs from top-down processing with a high ratio of surface area to volume are a promising candidate for possible applications such as thermoelectrics, dye-sensitized solar cells (DSSCs), and lithium-ion batteries.

Facile Growth of Cu2ZnSnS4 Thin-Film by One-Step Pulsed Hybrid Electrophoretic and Electroplating Deposition

The use of costly and rare metals such as indium and gallium in Cu(In,Ga)Se2 (CIGS) based solar cells has motivated research into the use of Cu2ZnSnS4 (CZTS) as a suitable replacement due to its non-toxicity, abundance of compositional elements and excellent optical properties (1.5 eV direct band gap and absorption coefficient of ~104 cm−1). In this study, we demonstrate a one-step pulsed hybrid electrodeposition method (PHED), which combines electrophoretic and electroplating deposition to deposit uniform CZTS thin-films. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm2, 0.43 and 0.59%, respectively.

Enhanced solar performance of chemical bath deposited-Zn(O,S)/Cu(In,Ga)Se2 solar cells via interface engineering by a wet soaking process

A facile wet soaking process by immersing a CIGS thin film in a mixed aqueous solution, containing gallium trichloride and thioacetamide at 80 °C for a few tens of seconds, was proposed to reduce the existence of defects in the CIGS absorption layer which can be confirmed by the temperature dependence of the open-circuit voltage (Voc). The depth profiles of X-ray photoelectron spectroscopy (XPS) results indicate that the gallium (Ga) concentration increases during the short wet soaking time, resulting in a widening of the band gap near the surface region. The enhanced carrier lifetime attributed to the Ga-induced defect reduction during thermal treatment of device fabrication was evaluated by time-resolved photoluminescence (TRPL) spectroscopy. With wet and light soaking processes, Voc, short circuit current (Jsc) and fill factor (F.F.) can be increased, yielding a significant enhancement in cell efficiency from ∼1% to ∼6.4%. We believe that this fast, simple and effective method can further stimulate the development of CBD-Zn(O,S)/post-selenization CIGS solar cells toward commercialized thin film photovoltaics.