Yu-Ze Chen

Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene is transferable onto MoS2. We demonstrate that a photodetector based on the graphene/MoS2 heterostructure is able to provide a high photogain greater than 108. Our experiments show that the electron-hole pairs are produced in the MoS2 layer after light absorption and subsequently separated across the layers. Contradictory to the expectation based on the conventional built-in electric field model for metal-semiconductor contacts, photoelectrons are injected into the graphene layer rather than trapped in MoS2 due to the presence of a perpendicular effective electric field caused by the combination of the built-in electric field, the applied electrostatic field, and charged impurities or adsorbates, resulting in a tuneable photoresponsivity.

Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrier concentration of MoS2 and WSe2 layers are independently controlled by the two symmetric gates. The same device can be gate modulated to behave as either an Esaki diode with negative differential resistance, a backward diode with large reverse bias tunneling current, or a forward rectifying diode with low reverse bias current. Notably, a high gate coupling efficiency of ∼80% is obtained for tuning the interlayer band alignments, arising from weak electrostatic screening by the atomically thin layers. This work presents an advance in the fundamental understanding of the interlayer coupling and electron tunneling in semiconductor vdW heterostructures with important implications toward the design of atomically thin tunnel transistors.

p-Type InP Nanopillar Photocathodes for Efficient Solar-Driven Hydrogen Production†

Water splitting by using sunlight for the production of hydrogen yields a storable product, which can be used as a fuel. There is considerable research into H2 generation, namely the reduction of protons to H2 in aqueous solution using semiconductor photocathodes. To maximize the photoelectrochemical (PEC) performance, the selection of the active materials and device configurations should be carefully considered. First, the short-circuit current density (Jsc) should be maximized by choosing materials with high optical absorption coefficients and low carrier recombination rates, both in the bulk and at the surface. The reflectance should be minimized by using surface nanotexturing to further improve light absorption. The onset potential (Eos) of the PEC device versus the reversible H /H2 redox potential should be maximized. Finally, the surface energy needs to be controlled to minimize the accumulation of gas bubbles on the surface of the photoelectrode. Light absorbers with band gaps in the range of 1.1–1.7 eV provide both a good match to the terrestrial solar spectrum and a significant fraction of the 1.23 eV free energy required to split water. Overpotentials associated with the electron transfer to (solvated) protons in aqueous solution should be minimized by improving carrier transport from semiconductor to electrolyte by decorating the semiconductor with cocatalysts, tuning band edges, and decreasing contact resistance. p-Type Si has been extensively investigated as a photocathode for photochemical hydrogen production. Planar Si has relatively low short-circuit current densities under AM1.5 G illumination, approximately 10 mAcm 2 (reference [9]), compared to what can be achieved in a pn junction solar cell (> 35 mAcm ). Nanostructuring and incorporation of cocatalysts have been used to raise the short-circuit current density to over 30 mAcm . A recent study using np Si radial junction microwires reported an Eos value of 0.54 V and an Jsc value of 15 mA, leading to an overall efficiency near 6%. The onset potential observed to date for p-Si photocathodes is less than half of the value required for overall water splitting (1.23 V). This low onset potential limits the performance of tandem or “Z-scheme” approaches, which would function without external bias, as it limits the potential overlap required for spontaneous water splitting. An ideal photocathode for use in a solar-driven hydrogen production system without bias should have both a high current density and a favorable open-circuit potential versus the reversible H/H2 redox couple. Herein, we employ nanotextured p-InP photocathodes in conjunction with a TiO2 passivation layer and a Ru cocatalyst to increase both Jsc and Eos values under H2 evolution conditions. InP has a number of attractive attributes as a photocathode: 1) Its band gap of 1.3 eV is well-matched to the solar spectrum; InP-based solar cells have achieved AM1.5 G efficiencies of up to 22%. 2) The conduction band edge of InP is slightly above the water reduction potential, thus electron transfer is favorable in this system. 3) The surface-recombination velocity of untreated InP is low (ca. 10 cms 1 for n-type and 10 cms 1 for p-type), which is particularly important for nonplanar devices with high surface areas, such as those explored in this study. For these reasons, InP has been studied previously as a photocathode for both water splitting and CO2 reduction. [18–20] Specifically, Heller and Vadimsky reported attractive PEC performances with current densities up to 28 mAcm 2 and conversion efficiencies of approximately 12% in InP photocathodes. Motivated by these results, we use InP as a model material system to elucidate the role of surface nanotexturing on the PEC device performance. We find that nanotextured InP photocathodes exhibit drastically enhanced performances compared to our planar cells that were processed using identical conditions. We examine the various effects of nanotexturing [*] M. H. Lee, K. Takei, J. Zhang, R. Kapadia, M. Zheng, J. Nah, J. W. Ager, Prof. A. Javey Material Sciences Division, Lawrence Berkeley National Laboratory Berkeley, CA 94720 (USA) E-mail: jwager@lbl.gov ajavey@berkeley.edu M. H. Lee, K. Takei, J. Zhang, R. Kapadia, M. Zheng, J. Nah, Prof. A. Javey Electrical Engineering and Computer Sciences University of California, Berkeley, CA 94720 (USA) M. H. Lee, T. S. Matthews, J. W. Ager, Prof. A. Javey Joint Center for Artificial Photosynthesis Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (USA)

Epitaxial Photostriction-Magnetostriction Coupled Self-Assembled Nanostructures

Self-assembled vertical nanostructures take advantage of high interface-to-volume ratio and can be used to design new functionalities by the choice of a proper combination of constituents. However, most of the studies to date have emphasized the functional controllability of the nanostructures using external electric or magnetic fields. In this study, to introduce light (or photons) as an external control parameter in a self-assembled nanostructure system, we have successfully synthesized oxide nanostructures with CoFe(2)O(4) nanopillars embedded in a SrRuO(3) matrix. The combination of photostrictive SrRuO(3) and magnetostrictive CoFe(2)O(4) in the intimately assembled nanostructures leads to a light-induced, ultrafast change in magnetization of the CoFe(2)O(4) nanopillars. Our work demonstrates a novel concept on oxide nanostructure design and opens an alternative pathway for the explorations of diverse functionalities in heteroepitaxial self-assembled oxide nanostructures.

Monolithic 3D CMOS Using Layered Semiconductors

Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.

Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: From controllable growth to material characterization

A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100°C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ~12 nm at growth temperature of 1000°C to ~32 nm at growth temperature of 1100°C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.

Au(Si)-filled β-Ga2O3 nanotubes as wide range high temperature nanothermometers

Au(Si)-filled β-Ga2O3 nanotubes were fabricated by an effective one-step chemical vapor deposition method. The Au(Si) interior was introduced by capillarity. Linear thermal expansion of Au(Si) with a coefficient of thermal expansion (CTE) as high as 1.5×10−4(1∕K) within single crystal Ga2O3 shell up to 800°C was observed by in situ transmission electron microscopy. The high CTE is correlated to partial melting of Au(Si). As Ga2O3 possesses excellent thermal and chemical stability, the structure can be used as a wide range high-temperature nanothermometer within localized regions of nanosystems.

High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition

III–V semiconductor solar cells have demonstrated the highest power conversion efficiencies to date. However, the cost of III-V solar cells has historically been too high to be practical outside of specialty applications. This stems from the cost of raw materials, need for a lattice-matched substrate for single-crystal growth, and complex epitaxial growth processes. To address these challenges, here, we explore the direct non-epitaxial growth of thin poly-crystalline films of III-Vs on metal substrates by using metalorganic chemical vapor deposition. This method minimizes the amount of raw material used while utilizing a low cost substrate. Specifically, we focus on InP which is known to have a low surface recombination velocity of carriers, thereby, making it an ideal candidate for efficient poly-crystalline cells where surface/interface properties at the grain boundaries are critical. The grown InP films are 1-3 μm thick and are composed of micron-sized grains that generally extend from the surface to t...

RuO2/MnO2 core–shell nanorods for supercapacitors

RuO2/MnO2 NRs as an electrode for supercapacitors show a high electrochemical performance with a specific capacitance of 793 F g−1 (based on MnO2) by cyclic voltammetry (CV) at a scan rate of 2 mV s−1 in 1 M Na2SO4 aqueous solution. A good rate capability with a specific capacitance of 556 F g−1 at a current density of 1 A g−1 and a good cycling stability (20% degradation after 1000 cycles) were also achieved. The enhancement of capacitive behavior can be attributed to the conductive RuO2 template with a series resistance of 0.75 Ω and a charge transfer resistance of 0.75 Ω. The results show that an active material such as a MnO2 hybrid with highly conductive 1D nanowires may greatly improve the electrochemical performance for supercapacitors.

Ultrafast and low temperature synthesis of highly crystalline and patternable few-layers tungsten diselenide by laser irradiation assisted selenization process.

Recently, a few attempts to synthesize monolayers of transition metal dichalcogenides (TMDs) using the chemical vapor deposition (CVD) process had been demonstrated. However, the development of alternative processes to synthesize TMDs is an important step because of the time-consuming, required transfer and low thermal efficiency of the CVD process. Here, we demonstrate a method to achieve few-layers WSe2 on an insulator via laser irradiation assisted selenization (LIAS) process directly, for which the amorphous WO3 film undergoes a reduction process in the presence of selenium gaseous vapors to form WSe2, utilizing laser annealing as a heating source. Detailed growth parameters such as laser power and laser irradiation time were investigated. In addition, microstructures, optical and electrical properties were investigated. Furthermore, a patternable WSe2 concept was demonstrated by patterning the WO3 film followed by the laser irradiation. By combining the patternable process, the transfer-free WSe2 back gate field effect transistor (FET) devices are realized on 300 nm-thick SiO2/P(+)Si substrate with extracted field effect mobility of ∼0.2 cm(2) V(-1) s(-1). Similarly, the reduction process by the laser irradiation can be also applied for the synthesis of other TMDs such as MoSe2 from other metal oxides such as MO3 film, suggesting that the process can be further extended to other TMDs. The method ensures one-step process to fabricate patternable TMDs, highlighting the uniqueness of the laser irradiation for the synthesis of different TMDs.