I. C. da Cunha Lima

Ferromagnetism and canted spin phase in AlAs / Ga 1 − x Mn x As single quantum wells: Monte Carlo simulation

The magnetic order resulting from a confinement-adapted Ruderman-Kittel-Kasuya-Yosida indirect exchange between magnetic moments in the metallic phase of a

Indirect exchange in (Ga,Mn)As bilayers via the spin-polarized inhomogeneous hole gas: Monte Carlo simulation

\mathrm{AlAs}/{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}

Spin-polarized transport in GaMnAs multilayers

quantum well is studied by Monte Carlo simulation. This coupling mechanism involves magnetic moments and carriers (holes), both coming from the same

Carrier induced ferromagnetism in Mn-doped ZnO: Monte Carlo simulations

{\mathrm{Mn}}^{2+}

Charge and spin distributions in Ga 1 − x Mn x As ∕ GaAs ferromagnetic multilayers

ions. It leads to a paramagnetic, a ferromagnetic, or a canted spin phase, depending on the carrier concentration, and on the magnetic layer width. It is shown that high transition temperatures may be obtained.

Ferromagnetism in a Cd1−xMnxTe double quantum well

The magnetic order resulting from an indirect exchange between magnetic moments provided by the spin-polarized hole gas in the metallic phase of a

A resonant tunneling diode based on a Ga1 xMnxAs=GaAs double barrier structure

{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}

Ferromagnetism in the metallic phase of (Ga,Mn)N nanostructures

double layer structure is studied via Monte Carlo simulation. The exchange is calculated to the second order of perturbation of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas due to the existence of an average magnetization in the magnetic layers, establishing, in this way, a self-consistency between the magnetic order and the electronic structure. That interaction leads to an internal ferromagnetic order inside each layer, and a parallel arrangement between their magnetizations, even in the case of thin layers. This fact is analyzed in terms of the interlayer and intralayer interactions.

Miniband Bloch conduction in semiconductor superlattices

The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into account the direct Coulomb Hartree and exchange-correlation terms, besides the sp–d exchange interaction with the Mn magnetic moments.

On the nature of the spin-polarized hole states in a quasi-two-dimensional GaMnAs ferromagnetic layer

Ferromagnetism in Mn-doped ZnO is investigated by Monte Carlo simulations assuming indirect exchange interaction via two different competing mechanisms: (i) antiferromagnetic superexchange and (ii) an oscillating carrier mediated interaction. The calculations are performed for p- and n-type samples. The Mn ion is taken as a substitutional impurity and its concentrations varied from 3% to 20%. The carrier concentrations (holes or electrons) were tested in the range of 1×1016–1×1020cm−3. These simulations showed paramagnetic, ferromagnetic, and spin-glass behaviors for the p-type samples depending on the Mn and hole concentrations. On the other hand, no phase transition was observed for the n-type samples, whatever the Mn and electron concentrations used in the simulations.