M. A. Boselli

Ferromagnetism and canted spin phase in AlAs / Ga 1 − x Mn x As single quantum wells: Monte Carlo simulation

The magnetic order resulting from a confinement-adapted Ruderman-Kittel-Kasuya-Yosida indirect exchange between magnetic moments in the metallic phase of a

Indirect exchange in (Ga,Mn)As bilayers via the spin-polarized inhomogeneous hole gas: Monte Carlo simulation

\mathrm{AlAs}/{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}

Spin-polarized transport in GaMnAs multilayers

quantum well is studied by Monte Carlo simulation. This coupling mechanism involves magnetic moments and carriers (holes), both coming from the same

Charge and spin distributions in Ga 1 − x Mn x As ∕ GaAs ferromagnetic multilayers

{\mathrm{Mn}}^{2+}

Ferromagnetism in a Cd1−xMnxTe double quantum well

ions. It leads to a paramagnetic, a ferromagnetic, or a canted spin phase, depending on the carrier concentration, and on the magnetic layer width. It is shown that high transition temperatures may be obtained.

Ferromagnetism in the metallic phase of (Ga,Mn)N nanostructures

The magnetic order resulting from an indirect exchange between magnetic moments provided by the spin-polarized hole gas in the metallic phase of a

Magnetic ordering in GaAlAs:Mn double well structure

{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}

Hole Spin Polarization in Metallic Ferromagnetic GaMnAs Multilayers and Superlattices: Lateral and Bloch Miniband Transport

double layer structure is studied via Monte Carlo simulation. The exchange is calculated to the second order of perturbation of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas due to the existence of an average magnetization in the magnetic layers, establishing, in this way, a self-consistency between the magnetic order and the electronic structure. That interaction leads to an internal ferromagnetic order inside each layer, and a parallel arrangement between their magnetizations, even in the case of thin layers. This fact is analyzed in terms of the interlayer and intralayer interactions.

Mobility of spin-polarized holes in GaMnAs multilayers

The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into account the direct Coulomb Hartree and exchange-correlation terms, besides the sp–d exchange interaction with the Mn magnetic moments.

Magnetic interaction between GaMnAs layers via spin-polarized quasi-two-dimensional hole gas: Monte Carlo simulation

A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration (considered as 5% in our calculation) makes it possible to assume the density of magnetic moments as a continuous distribution, when treating the magnetic interaction between holes and the localized moment on the Mn(++) sites. Our calculation shows the distribution of heavy holes and light holes in the structure. A strong spin-polarization is observed, and the charge is concentrated mostly on the GaMnAs layers, due to heavy and light holes with their total angular momentum aligned anti-parallel to the average magnetization. The charge and spin distributions are analyzed in terms of their dependence on the number of multilayers, the widths of the GaMnAs and GaAs layers, and the width of lateral GaAs layers at the borders of the structure.