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Dive into the research topics where I. G. Savel'ev is active.

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Featured researches published by I. G. Savel'ev.


Solid State Communications | 1988

Energy relaxation of 2D electrons at an AlGaAs/GaAs heterojunction at helium temperatures

A.M. Kreschuk; M.Yu. Martisov; T. A. Polyanskaya; I. G. Savel'ev; I.I. Saidashev; A. Ya. Shik; Yu.V. Shmartsev

Abstract The peculiarities of 2D electron gas heating are derived from the comparison of temperature and field dependences of galvanomagnetic effects for one or two occupied size-quantized subbands. The main energy relaxaton mechanism at helium temperatures is shown to be the scattering by piezoelectric potential of acoustic phonons. Experimental data and theory show that while the carrier density increases, the temperature dependence of energy loss rate changes due to contribution of electrons in second subband to the energy relaxation processes.


Journal of Crystal Growth | 1995

Quantum transport effects in a two-dimensional electron gas as a tool for the investigation of heterointerfaces

Andrej M. Kreshchuk; S. V. Novikov; T. A. Polyanskaya; I. G. Savel'ev; A.Ya. Shik

We have studied the influence of interface defects on low temperature galvanomagnetic effects in a two-dimensional electron gas (2DEG). Experiments have shown a non-ideal character of the InP/In 0.53 Ga 0.47 As interface in modulation-doped structures with 2DEG grown by liquid phase epitaxy. That is why such structures have been chosen for investigation. The following galvanomagnetic effects were investigated at liquid helium temperatures: the Hall mobility; the oscillatory magnetoresistance in a magnetic field perpendicular to the heterointerface; the negative magnetoresistance in a weak magnetic field parallel to 2DEG. The quantitative analysis of these effects allowed one to determine the interface parameters: the amplitude δ=7-10 A and the lateral size Λ=50-70 A of small-scale interface fluctuation, the interface charge density N z =(8±2) ×10 19 cm -2 and the amplitude of large-scale 2DEG density fluctuations δn s /n s 5%


Physica Status Solidi B-basic Solid State Physics | 1998

The Nonlinear Effects in 2DEG Conductivity Investigation by an Acoustic Method

I. L. Drichko; A. M. Diakonov; V. D. Kagan; Andrej M. Kreshchuk; T. A. Polyanskaya; I. G. Savel'ev; I. Yu. Smirnov; A. V. Suslov

The parameters of two-dimensional electron gas (2DEG) in a GaAs/AlGaAs het-erostructure were determined by an acoustical (contactless) method in the delocalized electrons region (B ≤2.5T). Nonlinear effects in Surface Acoustic Wave (SAW) absorption by 2DEG are determined by the electron heating in the electric field of SAW, which may be described in terms of electron temperature T e. The energy relaxation time τ ǫ is determined by the scattering at piezoelectric potential of acoustic phonons with strong screening. At different SAW frequencies the heating depends on the relationship between ωτ ǫ and 1 and is determined either by the instantaneously changing wave field (ωτ ǫ < 1), or by the average wave power (ωτ ǫ > 1).


Semiconductors | 1993

Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures

S. D. Bystrov; Andrej M. Kreshchuk; S. V. Novikov; T. A. Polyanskaya; I. G. Savel'ev; A. Tybulewicz


Semiconductors | 1995

Determination of the properties of the 2D electron gas in InGaAs/InP structures by acoustic methods under the conditions of the quantum Hall effect

I. L. Drichko; A. M. Dyakonov; V. D. Kagan; Andrej M. Kreshchuk; Gela D. Kipshidze; T. A. Polyanskaya; I. G. Savel'ev; Ivan Yu. Smirnov; A. V. Suslov; A. Ya. Shik


Semiconductors | 1993

Doping of epitaxial GaAs films by a Zn acceptor impurity during liquid phase epitaxy from Ga-Bi molten solutions

Le Tuan; Sergey V. Novikov; I. G. Savel'ev; D. N. Shelkovnikov; Yu. V. Shmartsev; A. Tybulewicz


Semiconductors | 1993

Feasibility of formation of In0.52Al0.48As films isoperiodic with the InP substrates by liquid phase epitaxy at low (∼650°C)

B. Y. Ber; S. D. Bystrov; D. A. Zushinskii; O. V. Kornyakova; Le Tuan; Sergey V. Novikov; I. G. Savel'ev; V. V. Tret'yakov; V. V. Chaldyshev; Yu. V. Shmartsev; A. Tybulewicz


Soviet physics. Semiconductors | 1992

Low-temperature mobility of a two-dimensional electron gas and the quality of a heterojunction in InGaAs/InP heterostructures grown by liquid phase epitaxy

A. M. Kreshchuk; Sergey V. Novikov; I. G. Savel'ev


Soviet physics. Technical physics | 1991

Electroliquid epitaxial growth of bulk crystals and simultaneous production of films on several substrates

L. V. Golubev; A.V. Egorov; Sergey V. Novikov; I. G. Savel'ev; V. V. Chaldyshev; R. G. Shapovalov; Yu. V. Shmartsev; J. S. Shier


Soviet physics. Semiconductors | 1991

Electrophysical parameters of GaAs films grown by liquid phase epitaxy from solution-melts in gallium and bismuth at different hydrogen flow rated

V. V. Vorob'eva; O. V. Zushinskaya; V. B. Lebedev; Le Tuan; Sergey V. Novikov; T. A. Polyanskaya; I. G. Savel'ev; Yu. V. Shmartsev; A. Tybulewicz

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T. A. Polyanskaya

Russian Academy of Sciences

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I. L. Drichko

Russian Academy of Sciences

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S. V. Novikov

University of Nottingham

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A. V. Suslov

Florida State University

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A. M. Diakonov

Russian Academy of Sciences

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A. M. Dyakonov

Russian Academy of Sciences

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A.Ya. Shik

Russian Academy of Sciences

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I. Yu. Smirnov

Russian Academy of Sciences

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A. Ya. Shik

University of Western Ontario

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