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Dive into the research topics where I. M. Tienda-Luna is active.

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Featured researches published by I. M. Tienda-Luna.


IEEE Signal Processing Magazine | 2009

Reverse engineering gene regulatory networks

Yufei Huang; I. M. Tienda-Luna; Yufeng Wang

Statistical models for reverse engineering gene regulatory networks are surveyed in this article. To provide readers with a system-level view of the modeling issues in this research, a graphical modeling framework is proposed. This framework serves as the scaffolding on which the review of different models can be systematically assembled. Based on the framework, we review many existing models for many aspects of gene regulation; the pros and cons of each model are discussed. In addition, network inference algorithms are also surveyed under the graphical modeling framework by the categories of point solutions and probabilistic solutions and the connections and differences among the algorithms are provided. This survey has the potential to elucidate the development and future of reverse engineering gene regulatory networks (GRNs) and bring statistical signal processing closer to the core of this research.


IEEE Transactions on Electron Devices | 2009

Equivalent Oxide Thickness of Trigate SOI MOSFETs With High-

F. G. Ruiz; I. M. Tienda-Luna; A. Godoy; L. Donetti; F. Gámiz

The evolution of traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) from planar single-gate devices into 3-D ones with multiple gates and high-kappa insulators imposes the use of new electrical models that accurately reproduce their behavior. This paper demonstrates that the typical expression of equivalent oxide thickness (EOT) for planar devices with high- kappa gate insulators becomes useless for nonplanar ones such as triple-gate (trigate) silicon-on-insulator MOSFETs. An alternative expression of the EOT for these trigate devices has been developed through a semianalytical approach to the gate-insulator capacitance. The proposed model correctly reproduces the total electron density in a wide range of device dimensions and applied biases.


IEEE Transactions on Electron Devices | 2013

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Enrique G. Marin; F. G. Ruiz; I. M. Tienda-Luna; A. Godoy; F. Gámiz

In this paper, we propose a physically based analytical model for the gate capacitance (CG) of III-V nanowire (NW) transistors. The model explicitly accounts for different terms that contribute to CG: the insulator capacitance, the finite density of states, and the charge distribution in the NW. It considers the 2-D quantum confinement of the carriers, the wavefunction penetration into the gate insulator, Fermi-Dirac statistics and the conduction band nonparabolicity, providing analytical expressions for all the capacitance contributions. Furthermore, the behavior and role of the density of states and the charge distribution in the NW are discussed for several materials and the influence of the wavefunction penetration into the gate insulator is also studied. We show that our analytical model is in very good agreement with the numerical solution for different device sizes and materials.


Journal of Applied Physics | 2011

Insulators

I. M. Tienda-Luna; F. G. Ruiz; A. Godoy; Blanca Biel; F. Gámiz

We present an extension of the unscreened generalized Prange-Nee term used to calculate the surface roughness (SR) limited mobility in arbitrarily oriented square nanowires. The presence of non-diagonal terms in the effective mass tensor is responsible for an additional term not considered in previous studies. We assess the impact of such a modification on the SR limited mobility and on the total mobility (SR and phonon scattering are considered) for devices with different orientation and size. We show that this impact is more relevant for small devices, where the SR plays an important role, even at low inversion charge.


Genetica | 2007

Analytical Gate Capacitance Modeling of III–V Nanowire Transistors

I. M. Tienda-Luna; Yufang Yin; María C. Carrión; Yufei Huang; Hong Cai; Maribel Sanchez; Yufeng Wang

The development of new antimalarial drugs is urgently needed due to elevated drug resistance in the causative agents Plasmodium parasites. An intervention strategy based on the interruption of the parasite cell cycle could be undertaken using a systems-biology aided drug discovery approach. However, little is known about the components or the mechanism of parasite cell cycle control to date. In this proof of concept study, we attempted to infer the skeleton components using comparative genomic analysis and to uncover the genetic regulatory network (GRN) ab initio using a Variational Bayesian expectation maximization (VBEM) approach.


Journal of Applied Physics | 2012

Surface roughness scattering model for arbitrarily oriented silicon nanowires

Enrique G. Marin; F. G. Ruiz; I. M. Tienda-Luna; A. Godoy; P. Sánchez-Moreno; F. Gámiz

In this work, an analytical model is proposed to calculate the potential and the inversion charge of III-V cylindrical Surrounding-Gate metal-oxide-semiconductor field-effect transistors (MOSFETs). The model provides expressions for the calculation of the subband energies and their corresponding wavefunctions, taking into account their penetration into the gate insulator and the effective mass discontinuity in the semiconductor-insulator interface for this kind of devices. The model considers Fermi-Dirac statistics and the two-dimensional quantum confinement of the carriers. We demonstrate that our analytical solution fits very well the numerical solution in all operating regimes and for different device sizes and materials.


IEEE Signal Processing Magazine | 2009

Inferring the skeleton cell cycle regulatory network of malaria parasite using comparative genomic and variational Bayesian approaches

Yufei Huang; I. M. Tienda-Luna; Yufeng Wang

Statistical models for reverse engineering gene regulatory networks are surveyed in this article. To provide readers with a system-level view of the modeling issues in this research, a graphical modeling framework is proposed. This framework serves as the scaffolding on which the review of different models can be systematically assembled. Based on the framework, we review many existing models for many aspects of gene regulation; the pros and cons of each model are discussed. In addition, network inference algorithms are also surveyed under the graphical modeling framework by the categories of point solutions and probabilistic solutions and the connections and differences among the algorithms are provided. This survey has the potential to elucidate the development and future of reverse engineering gene regulatory networks (GRNs) and bring statistical signal processing closer to the core of this research.


IEEE Transactions on Electron Devices | 2011

Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors

I. M. Tienda-Luna; F. G. Ruiz; A. Godoy; Blanca Biel; F. Gámiz

In this paper, the effects of device orientation, geometry, and strain (uniaxial and biaxial) on the electrostatic properties of different silicon gate-all-around metal-oxide-semiconductor field-effect transistors are thoroughly investigated. We show how the electron density changes with the device orientation and how it depends on the geometry, size, and strain. Although the threshold voltage is weakly dependent on the orientation, we show that it is strongly affected by the geometry, strain, and size. In addition, the suitability of the isotropic effective mass model is investigated for cylindrical devices. We prove that this model is not able to mimic electron density obtained with a nonisotropic model. However, if an appropriate isotropic effective mass value is selected, the behavior of the threshold voltage can be reproduced.


Journal of Applied Physics | 2008

Reverse engineering gene regulatory networks: A survey of statistical models

A. Lazaro; B. Nae; Benjamin Iniguez; F. Garcia; I. M. Tienda-Luna; A. Godoy

Fin-shaped field effect transistors (FinFETs) are considered to be a very attractive option to improve the performance of complementary metal-oxide-semiconductor devices into the sub-50‐nm gate length regime. However, for those dimensions, quantum effects must be considered in order to develop accurate compact models useful for circuit simulations. In this paper, we study the influence of the quantum effects on dc, Radio frequency (rf), and microwave noise for nanoscale FinFET transistors including nonstationary effects. We present an analytical charge model to adjust the charge control computed from the self-consistent solution of the two-dimensional Schrodinger and Poisson equations. rf and noise performances are calculated using the active transmission line method. Comparison between classical and quantum charge control and between drift-diffusion and hydrodynamic models is carried out.


Journal of Applied Physics | 2014

Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs

Enrique G. Marin; F. G. Ruiz; A. Godoy; I. M. Tienda-Luna; Celso Martinez-Blanque; F. Gámiz

This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

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A. Godoy

University of Granada

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F. Gámiz

University of Granada

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Yufei Huang

University of Texas at San Antonio

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Yufeng Wang

University of Texas at San Antonio

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