Ichiro Tonai
Sumitomo Electric Industries
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Featured researches published by Ichiro Tonai.
electronic components and technology conference | 1998
Hisao Go; Naoki Nishiyama; Eiji Tsumura; Yasushi Fujimura; Hiromi Nakanishi; Ichiro Tonai; Mitsuaki Nishie
The standardization task of gigabit Ethernet by IEEE802.3z working group is attracting a great deal of attention. The demands for the modules compliant with the standardized specification will be increased. We have successfully developed gigabit fiberoptic transceiver modules compliant with 1000BASE-LX, proposed specification in gigabit Ethernet. The main feature of this module is 3.3 V operation which leads to low power consumption, while most of the conventional modules operate at 5.0 V. We used the newly designed package with lower profile 9.4 mm in height. The carefully designed modules package was formed by transfer mold encapsulation techniques which contribute to the cost reduction. In this paper, the design, assembling process, and characteristics of the developed module are described.
electronic components and technology conference | 1998
Ichiro Tonai; Takashi Fukuoka; Yasuki Mikamura; Toshio Mizue; Daisuke Takagi; Takeshi Irie; Ichiro Kono
Optical data links have been spreading widely over various data communication networks. Inexpensive data links are required for further infiltration into communication networks. To meet the market demand, we developed data links with transfer molding technology in 1990 and with flexible printed circuit boards in 1995, respectively. Based on these technologies, transparent epoxy molded optical data links have been developed for further cost reduction. Optical and electrical devices are assembled on a lead frame and molded with transparent epoxy, which works as a package and a lens at the same time. The data link is designed to be used at data rates up to 155.52 Mbps or 200 Mbps.
1987 Symposium on the Technologies for Optoelectronics | 1987
Ichiro Tonai; Takashi Yano; Hiroshi Okuda
Two basic parameters, the surface recombination velocity(S) and the diffusion length(Le), have been studied through investigating the responsivity of InGaAs p-i-n photodiodes without an InP window layer. The values of S and Le were found to be 10 4cm/s and 4μm, respectively. The high responsivity of 0.7A/W at λ=1.3μm was obtained without an antireflection coating due to the small surface recombination velocity.
Archive | 1995
Hiromi Kurashima; Hisato Takahashi; Ken-Ichi Kitayama; Ryoji Sakamoto; Sosaku Sawada; Takeshi Sekiguchi; Ichiro Tonai; Nobuo Shiga
Archive | 1993
Ichiro Tonai
Archive | 1994
Osamu Akita; Ichiro Tonai
Archive | 1993
Yoshiki Kuhara; Hideaki Koseki; Hisato Michikoshi; Ichiro Tonai
Archive | 1994
Ichiro Tonai; Osamu Akita
Archive | 2002
Shunsuke Sato; Toshio Mizue; Ichiro Tonai
Archive | 2002
Ichiro Tonai; Shunsuke Sato