Ilham Hassoune
Université catholique de Louvain
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Featured researches published by Ilham Hassoune.
IEEE Transactions on Circuits and Systems | 2010
Ilham Hassoune; Denis Flandre; Ian O'Connor; Jean-Didier Legat
In this paper, we first propose a new structure of a hybrid full adder, namely, the branch-based logic and pass-transistor (BBL-PT) cell, which we implemented by combining branch-based logic and pass-transistor logic. Evolution of the proposed cell from its original version to an ultralow-power (ULP) cell is described. Quantitative comparisons of the optimized version, namely, the ULP full adder (ULPFA), are carried out versus the BBL-PT full adder and its counterparts in two well-known and commonly used logic styles, i.e., conventional static CMOS logic and complementary pass logic (CPL), in a 0.13-μm PD SOI CMOS with a supply voltage of 1.2 V, demonstrating power delay product (PDP) and static power performance that are more than four times better than CPL design. This could lead to tremendous benefit for multiplier application. The implementation of an 8-bit ripple carry adder based on the ULPFA is finally described, and comparisons between adders based on full adders from the prior art and our ULPFA version demonstrate that our development outperforms the static CMOS and the CPL full adders, particularly in terms of power consumption and PDP by at least a factor of two.
Microelectronics Journal | 2006
Ilham Hassoune; François Macé; Denis Flandre; Jean-Didier Legat
A new logic style called low-swing current mode logic (LSCML) is presented. It features a dynamic and differential structure and a low-swing current mode operation. The LSCML logic style may be used for hardware implementation of secure smart cards against differential power analysis (DPA) attacks but also for implementation of self-timed circuits thanks to its self-timed operation. Electrical simulations of the Khazad S-box have been carried out in 0.13 mu m PD (partially depleted) Sol CMOS technology. For comparison purpose, the Khazad S-box was implemented with the LSCML logic and two other dynamic differential logic styles previously reported. Simulation results have shown an improved reduction of the data-dependent power signature when using LSCML circuits. Indeed the LSCML based Khazad S-box has shown a power consumption standard deviation more than two times smaller than the one in DyCML and almost two times smaller than the one in DDCVSL. (c) 2006 Elsevier Ltd. All rights reserved.
power and timing modeling optimization and simulation | 2004
Ilham Hassoune; Amaury Nève; Jean-Didier Legat; Denis Flandre
A full-adder implemented by combining branch-based logic and pass-gate logic is presented in this contribution. A comparison between this proposed full-adder (named BBL_PT) and its counterpart in conventional CMOS logic, was carried out in a 0.13mum PD (partially depleted) SOI CMOS for a supply voltage of 1.2V and a threshold voltage of 0.28V. Moreover, MTCMOS (multi-threshold) circuit technique was applied on the proposed full-adder to achieve a trade-off between Ultra-Low power and high performance design. Design with DTMOS (dynamic threshold) devices was also investigated with two threshold voltage values (0.28V and 0.4V) and V-dd = 0.6V.
Proceedings of DCIS 2004 | 2004
François Macé; François-Xavier Standaert; Ilham Hassoune; Jean-Didier Legat; Jean-Jacques Quisquater
Integration | 2007
Ilham Hassoune; François Macé; Denis Flandre; Jean-Didier Legat
Archive | 2005
Ilham Hassoune; Jean-Didier Legat
soft computing | 2007
David Bol; Ilham Hassoune; David Levacq; Denis Flandre; Jean-Didier Legat
Solid-state Electronics | 2005
Ilham Hassoune; Alexander Drummond; Arnaud Gaudissart; David Bol; David Levacq; Denis Flandre; Jean Didier Legat
EUROSOI 2005 - First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits | 2005
Ilham Hassoune; Jean-Didier Legat; Denis Flandre
International High Temperature Electronics Conference and Exhibition (HITECH 2004) | 2004
Ilham Hassoune; Amaury Nève; Jean-Didier Legat; Denis Flandre