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Dive into the research topics where Ilham Hassoune is active.

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Featured researches published by Ilham Hassoune.


IEEE Transactions on Circuits and Systems | 2010

ULPFA: A New Efficient Design of a Power-Aware Full Adder

Ilham Hassoune; Denis Flandre; Ian O'Connor; Jean-Didier Legat

In this paper, we first propose a new structure of a hybrid full adder, namely, the branch-based logic and pass-transistor (BBL-PT) cell, which we implemented by combining branch-based logic and pass-transistor logic. Evolution of the proposed cell from its original version to an ultralow-power (ULP) cell is described. Quantitative comparisons of the optimized version, namely, the ULP full adder (ULPFA), are carried out versus the BBL-PT full adder and its counterparts in two well-known and commonly used logic styles, i.e., conventional static CMOS logic and complementary pass logic (CPL), in a 0.13-μm PD SOI CMOS with a supply voltage of 1.2 V, demonstrating power delay product (PDP) and static power performance that are more than four times better than CPL design. This could lead to tremendous benefit for multiplier application. The implementation of an 8-bit ripple carry adder based on the ULPFA is finally described, and comparisons between adders based on full adders from the prior art and our ULPFA version demonstrate that our development outperforms the static CMOS and the CPL full adders, particularly in terms of power consumption and PDP by at least a factor of two.


Microelectronics Journal | 2006

Low-swing current mode logic (LSCML): A new logic style for secure and robust smart cards against power analysis attacks

Ilham Hassoune; François Macé; Denis Flandre; Jean-Didier Legat

A new logic style called low-swing current mode logic (LSCML) is presented. It features a dynamic and differential structure and a low-swing current mode operation. The LSCML logic style may be used for hardware implementation of secure smart cards against differential power analysis (DPA) attacks but also for implementation of self-timed circuits thanks to its self-timed operation. Electrical simulations of the Khazad S-box have been carried out in 0.13 mu m PD (partially depleted) Sol CMOS technology. For comparison purpose, the Khazad S-box was implemented with the LSCML logic and two other dynamic differential logic styles previously reported. Simulation results have shown an improved reduction of the data-dependent power signature when using LSCML circuits. Indeed the LSCML based Khazad S-box has shown a power consumption standard deviation more than two times smaller than the one in DyCML and almost two times smaller than the one in DDCVSL. (c) 2006 Elsevier Ltd. All rights reserved.


power and timing modeling optimization and simulation | 2004

Investigation of Low-Power Low-Voltage Circuit Techniques for a Hybrid Full-Adder Cell

Ilham Hassoune; Amaury Nève; Jean-Didier Legat; Denis Flandre

A full-adder implemented by combining branch-based logic and pass-gate logic is presented in this contribution. A comparison between this proposed full-adder (named BBL_PT) and its counterpart in conventional CMOS logic, was carried out in a 0.13mum PD (partially depleted) SOI CMOS for a supply voltage of 1.2V and a threshold voltage of 0.28V. Moreover, MTCMOS (multi-threshold) circuit technique was applied on the proposed full-adder to achieve a trade-off between Ultra-Low power and high performance design. Design with DTMOS (dynamic threshold) devices was also investigated with two threshold voltage values (0.28V and 0.4V) and V-dd = 0.6V.


Proceedings of DCIS 2004 | 2004

A Dynamic Current Mode Logic to Counteract Power Analysis Attacks

François Macé; François-Xavier Standaert; Ilham Hassoune; Jean-Didier Legat; Jean-Jacques Quisquater


Integration | 2007

Dynamic differential self-timed logic families for robust and low-power security ICs

Ilham Hassoune; François Macé; Denis Flandre; Jean-Didier Legat


Archive | 2005

Low Swing Current Mode Logic Family

Ilham Hassoune; Jean-Didier Legat


soft computing | 2007

Efficient Multiple-Valued Signed-Digit Full Adder Based on NDR MOS Structures and its Application to an N-bit Current-Mode Constant-Time Adder

David Bol; Ilham Hassoune; David Levacq; Denis Flandre; Jean-Didier Legat


Solid-state Electronics | 2005

A new multi-valued current-mode adder based on negative-differential resistance using ULP diodes

Ilham Hassoune; Alexander Drummond; Arnaud Gaudissart; David Bol; David Levacq; Denis Flandre; Jean Didier Legat


EUROSOI 2005 - First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits | 2005

Hybrid full-adder cell in 0.13 µm PD SOI CMOS for low-voltage low-power applications

Ilham Hassoune; Jean-Didier Legat; Denis Flandre


International High Temperature Electronics Conference and Exhibition (HITECH 2004) | 2004

Branch-Based Design of Carry Calculation Cell for Ultra-Low Power and High-Temperature Applications

Ilham Hassoune; Amaury Nève; Jean-Didier Legat; Denis Flandre

Collaboration


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Jean-Didier Legat

Université catholique de Louvain

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Denis Flandre

Université catholique de Louvain

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David Levacq

Université catholique de Louvain

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François Macé

Université catholique de Louvain

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Alexander Drummond

Université catholique de Louvain

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Amaury Nève

Université catholique de Louvain

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Arnaud Gaudissart

Université catholique de Louvain

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David Bol

Université catholique de Louvain

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François-Xavier Standaert

Université catholique de Louvain

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Ian O'Connor

Université catholique de Louvain

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