J.B. Kuo

Tiling slideshow

This paper presents a new medium, called tiling slideshow, to display photos in a tile-like manner, coordinating with the pace of background music. In contrast to the conventional photo slideshow, multiple photos that have similar characteristics are well arranged and displayed at the same layout. Motivated by the concepts of technical writing, each displaying layout is composed of a larger topic photo and several small-size supportive photos. Based on this idea, the proposed tiling slideshow system consists of three major components: image clustering, music analyzer, and layout organizer. Given the limited displaying space, we consider the context and relationship between photos and model the layout organization as a constrainted optimization problem. Experiments on real consumer photograph collections show that the novel displaying method gives users more pleasant browsing experience than the methods that focus only on single photograph display.

Action movies segmentation and summarization based on tempo analysis

With the advances of digital video analysis and storage technologies, also the progress of entertainment industry, movie viewers hope to gain more control over what they see. Therefore, tools that enable movie content analysis are important for accessing, retrieving, and browsing information close to a human perceptive and semantic level. We proposed an action movie segmentation and summarization framework based on movie tempo, which represents as the delivery speed of important segments of a movie. In the tempo-based system, we combine techniques of the film domain related knowledge (film grammar), shot change detection, motion activity analysis, and semantic context detection based on audio features to grasp the concept of tempo for story unit extraction, and then build a system for action movies segmentation and summarization. We conduct some experiments on several different action movie sequences, and demonstrate an analysis and comparison according to the satisfactory experimental results

A BiCMOS dynamic carry lookahead adder circuit for VLSI implementation of high-speed arithmetic unit

A BiCMOS dynamic carry lookahead circuit that is free from race problems is presented. A 16 b full-adder test circuit, which has been designed based on a 2 mu m BiCMOS technology, shows a more than five times improvement in speed as compared to the CMOS Manchester carry lookahead (MCLA) circuit. The speed advantage of the BiCMOS dynamic carry lookahead circuit is even greater in a 32- or 64-b adder. >

Automatic video region-of-interest determination based on user attention model

The paper presents a framework for automatic video region-of-interest determination based on a user attention model. A set of attempts on using video attention features and knowledge of applied media aesthetics are made. The three types of visual attention features used are intensity, color, and motion. Referring to aesthetic principles, these features are combined according to camera motion types on the basis of a newly proposed video analysis unit, frame-segment. We conduct subjective experiments on several kinds of video data and demonstrate the effectiveness of the proposed framework.

An analytical drain current model for short-channel fully-depleted ultrathin silicon-on-insulator NMOS devices

Abstract This paper presents an analytical drain current model considering the impact ionization and parasitic BJT effects, an energy balance equation, and lattice thermal effect for short-channel fully-depleted ultrathin silicon-on-insulator NMOS devices. Supported by the experimental data, the analytical model shows a good prediction of the drain current characteristics. According to the model, in the saturation region at small V G , the impact ionization and parasitic BJT effects are important. At large V G , the lattice thermal effect is important.

Analysis of the quasi-saturation behavior considering the drain-to-source voltage and cell-spacing effects for a vertical DMOS power transistor

Abstract This paper reports an analysis of the quasi-saturation behavior considering the drain-to-source voltage ( V DS ) and cell-spacing effects for a vertical DMOS power transistor. Considering the unique electron distribution in the substrate, a V DS dependent quasi-saturation analytical model has been developed. As verified by the PISCES results, the analytical model provides an explanation of the cell-spacing-dependent quasi-saturation behavior in a DMOS device.

An analytical CAD kink effect model of partially-depleted SOI NMOS devices operating in strong inversion

Abstract This paper reports a closed-form analytical kink effect model for CAD of partially-depleted SOI NMOS devices operating in strong inversion. Based on the bulk-emitter voltage, an analytical triggering V DS formula for kink effects has been obtained. According to the analytical model, with a lighter doping density in the thin film and a thicker gate oxide, the onset of the kink effect occurs at a larger V DS .

TV commercial detection in news program videos

Detection of the commercials in TV videos is hard because the diversity of them puts up a rather high barrier to finding an appropriate model. After some studies of existing commercial detection works, we try to deal with this problem through a top-down approach. We select some commercial features by conjecturing the thoughts of both commercial producers and the audiences. By combining the commercial features with a video scene detection mechanism, a two-level commercial detection scheme is proposed. Experiments show the good results of the proposed scheme in detecting commercials in news program videos.

An analytical pull-up transient model for a BiCMOS inverter

Abstract This paper reports the development of an analytical pull-up transient model based upon the Gummel-Poon charge control model for a BiCMOS inverter. Compared to SPICE simulation results, this analytical model, which accounts for bipolar high injection and Early effects, provides an accurate simulation for the BiCMOS pull-up transient behavior including the internal overshoot phenomenon at the base.

Sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI NMOS devices

The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI NMOS devices. Based on the study, contrary to bulk NMOS devices, for a channel width shrinking from 1 /spl mu/m to 0.2 /spl mu/m, the threshold voltage of mesa-isolated ultra-thin SOI NMOS devices with a 1000 /spl Aring/ thin film doped with 10/sup 17/ cm/sup -3/, decreases by 0.145 V for a front gate oxide of 100 /spl Aring/ and a sidewall oxide of 150 /spl Aring/ as a result of the sidewall edge effect.<<ETX>>