J. B. Varesi

Optomechanical uncooled infrared imaging system: design, microfabrication, and performance

This paper presents the design, fabrication and performance of an uncooled micro-optomechanical infrared (IR) imaging system consisting of a focal-plane array (FPA) containing bi-material cantilever pixels made of silicon nitride (SiNx) and gold (Au), which serve as infrared absorbers and thermomechanical transducers. Based on wave optics, a visible optical readout system is designed to simultaneously measure the deflections of all the cantilever beams in the FPA and project the visible deflection map onto a visible charge-coupled device (CCD) imager. The IR imaging results suggest that the detection resolution of current design is 3-5 K, whereas noise analysis indicates the current resolution to be around 1 K. The noise analysis also shows that the theoretical noise-equivalent temperature difference (NETD) of the system can be below 3 mK.

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates

We have developed the capability to grow HgCdTe mid-wave infrared radiation double-layer heterojunctions (MWIR DLHJs) on 4″ Si wafers by molecular beam epitaxy (MBE), and fabricate devices from these wafers that are comparable to those produced by mature technologies. Test data show that the detectors, which range in cutoff wavelength over 4–7 μm, are comparable to the trendline performance of liquid phase epitaxy (LPE)-grown material. The spectral characteristics are similar, with a slight decrease in quantum efficiency attributable to the Si substrate. With respect to R0A, the HgCdTe/Si devices are closer to the theoretical radiative-limit than LPE-grown detectors. Known defect densities in the material have been correlated to device performance through a simple model. Slight 1/f noise increases were measured in comparison to the LPE material, but the observed levels are not sufficient to significantly degrade focal plane array (FPA) performance. In addition to discrete detectors, two FPA formats were fabricated. 128×128 FPAs show MWIR sensitivity comparable to mature InSb technology, with pixel operability values in excess of 99%. A 640×480 FPA further demonstrates the high-sensitivity and high-operability capabilities of this material.

MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

HgCdTe p-on-n double layer heterojunctions (DLHJs) for mid-wave infrared (MWIR) detector applications have been grown on 100 mm (4 inch) diameter (211) silicon substrates by molecular beam epitaxy (MBE). The structural quality of these films is excellent, as demonstrated by x-ray rocking curves with full widths at half maximum (FWHMs) of 80–100 arcsec, and etch pit densities from 1 106 to 7 106 cm−2. Morphological defect densities for these layers are generally less than 1000 cm−2. Improving Hg flux coverage of the wafer during growth can reduce void defects near the edges of the wafers. Improved tellurium source designs have resulted in better temporal flux stability and a reduction of the center to edge x-value variation from 9% to only 2%. Photovoltaic MWIR detectors have been fabricated from some of these 100mm wafers, and the devices show performance at 140 K which is comparable to other MWIR detectors grown on bulk CdZnTe substrates by MBE and by liquid phase epitaxy.

Sensitivity improvements in uncooled microbolometer FPAs

Raytheon IRCOE has developed a family of uncooled, microbolometer FPAs. These FPAs have been designed to address commercial and high-performance military applications. The SB-151 is a high-sensitivity 320 X 240 FPA with 50 micrometers pixels. The SB-151 FPA has been fabricated with several microbolometer pixel designs that allow optimization of either sensitivity or response time. Noise equivalent temperature difference (NETD) values as low as 8.6 mK have been measured for the SB-151 FPAs with f/1 optics. NETD values less than 25 mK have been measured for FPAs with thermal time constants of approximately 18 msec.

Microbolometer uncooled infrared camera with 20-mK NETD

Raytheon Systems Company has developed a prototype infrared imaging rifle-sight using an uncooled, microbolometer FPA. The high-sensitivity FPA (SBRC-151) used in the Long-wavelength Staring Sensor (LWSS) was developed by Raytheon Infrared Center of Excellence (IR COE). The NETD (noise equivalent temperature difference) sensitivity of the camera has been measured at 14 mK with f/1 optics and at 74 mK with an f/2.1 aperture stop. Excellent imagery has been demonstrated with the f/2.1 aperture. The 320 X 240 FPA utilizes a high-yield CMOS readout integrated circuit (ROIC) that achieves high sensitivity, low output nonuniformity, and large scene dynamic range. The ROIC provides multi-level, on-chip nonuniformity correction and on-chip temperature compensation. The FPA has 50 micrometer X 50 micrometer pixels and operates at frame rates up to 60 Hz with a single output. The LWSS was characterized by the U.S. Armys NVESD in 1997 using an earlier version of the SBRC-151 FPA. The NVESD measurements validated the Raytheon NETD data. The NVESD evaluation also demonstrated outstanding MRT and spatial noise characteristics. The VOx microbolometer detectors are produced at the Raytheon IR COE facility in Santa Barbara, CA using an advanced dry-etch fabrication process. In addition to the LWSS project, the IR COE has initiated production of the microbolometer FPAs (AE-189) for commercial applications. Over 600 FPAs have been produced on this project, and data is presented for the first 250 FPAs that have been packaged and tested. The pixel operability of the production radiometer FPAs (AE-189) is typically greater than 99.9%.

Micro-optomechanical infrared receiver with optical readout—MIRROR

An uncooled infrared detector having an optical readout is described. Infrared heat is sensed with bimaterial cantilevers which bend in response to temperature changes. One side of the bimaterial cantilever is an optical reflector. Visible light reflecting off the bent cantilever is detected with a CCD camera to provide the sensor output. We describe this device as a micro-optomechanical infrared receiver with optical readout -- MIRROR. Devices based upon this principle have successfully imaged infrared. Changes to the system are in progress to improve sensitivity.

Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Since its initial synthesis and investigation more than 40 years ago, the HgCdTe alloy semiconductor system has evolved into one of the primary infrared detector materials for high-performance infrared focal-plane arrays (FPA) designed to operate in the 3-5 mm and 8-12 mm spectral ranges of importance for thermal imaging systems. Over the course of the past decade, significant advances have been made in the development of thin-film epitaxial growth techniques, such as molecular-beam epitaxy (MBE), which have enabled the synthesis of IR detector device structures with complex doping and composition profiles. The central role played by in situ sensors for monitoring and control of the MBE growth process are reviewed. The development of MBE HgCdTe growth technology is discussed in three particular device applications: avalanche photodiodes for 1.55 +m photodetection, megapixel FPAs on Si substrates, and multispectral IR detectors.

Infrared vision using uncooled optomechanical camera

An uncooled IR imaging system that is based on thermomechanical sensing of IR radiation in conjunction with a visible optical readout has been developed. The system contains a focal plane array (FPA) consisting of bimaterial cantilever beams made of silicon nitride (SiNx) and gold (Au) in each pixel. Absorption on incident IR radiation in the 8-14 micrometers wavelength range by SiNx in each cantilever beam raises its temperature, resulting in proportional deflection due to mismatch in thermal expansion of the two cantilever materials. The FPA design involved maximizing the thermal resistance between the pixel and its surroundings, maximizing the thermomechanical response within the constraints of the pixel size, optimizing the pixel time response, and maximizing the IR absorption using thin film optics. Microfabrication of stress-balanced bimaterial cantilevers was achieved by varying the silicon concentration along the thickness of the SiNx films in order to balance the residual tensile stress in the Au film and the Cr adhesion layer between Au and SiNx. The optical readout utilized Fourier diffractive optics to simultaneously detect deflections of all cantilevers using a single light source. The results suggest that objects at temperatures as low as 30 degrees C can be imaged with the best noise-equivalent temperature difference (NETD) in the range of 2-5 K. It is estimated that further improvements that are currently being pursed can improved NETD below 5 mK.