W. A. Radford

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates

We have developed the capability to grow HgCdTe mid-wave infrared radiation double-layer heterojunctions (MWIR DLHJs) on 4″ Si wafers by molecular beam epitaxy (MBE), and fabricate devices from these wafers that are comparable to those produced by mature technologies. Test data show that the detectors, which range in cutoff wavelength over 4–7 μm, are comparable to the trendline performance of liquid phase epitaxy (LPE)-grown material. The spectral characteristics are similar, with a slight decrease in quantum efficiency attributable to the Si substrate. With respect to R0A, the HgCdTe/Si devices are closer to the theoretical radiative-limit than LPE-grown detectors. Known defect densities in the material have been correlated to device performance through a simple model. Slight 1/f noise increases were measured in comparison to the LPE material, but the observed levels are not sufficient to significantly degrade focal plane array (FPA) performance. In addition to discrete detectors, two FPA formats were fabricated. 128×128 FPAs show MWIR sensitivity comparable to mature InSb technology, with pixel operability values in excess of 99%. A 640×480 FPA further demonstrates the high-sensitivity and high-operability capabilities of this material.

320 x 240 silicon microbolometer uncooled IR FPAs with on-chip offset correction

SBRC has developed a high-quality 320 X 240 room- temperature infrared FPA that operates in the 8 - 14 micrometers spectral band. The FPA is based upon the silicon microbolometer technology that has been licensed from Honeywell. This monolithic uncooled FPA utilizes a novel BiCMOS readout circuit that provides high sensitivity and excellent output uniformity. The 320 X 240 FPA operates at frame rates up to 60 Hz with a single output. The microbolometers were fabricated monolithically on the silicon readout circuits at SBRC using VOx as the bolometer material. As advanced microbridge structure design was used that achieves an optical fill-factor greater than 65% in the 48 micrometers X 48 micrometers pixels. The structure also provides excellent thermal isolation for high responsivity and sensitivity. Initial measurements indicate the FPAs are operating with an NETD sensitivity of about 100 mK for an f/1 aperture. This FPA is ultimately expected to operate at sensitivities of less than 20 mK. The FPA also demonstrates peak-to-peak output nonuniformities of less than 100 mV. The FPAs have been mounted in permanently-sealed vacuum packages with single-stage thermoelectric temperature stabilizers. These vacuum packages have been integrated into a camera system that has produced high-quality infrared imagery.

MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

HgCdTe p-on-n double layer heterojunctions (DLHJs) for mid-wave infrared (MWIR) detector applications have been grown on 100 mm (4 inch) diameter (211) silicon substrates by molecular beam epitaxy (MBE). The structural quality of these films is excellent, as demonstrated by x-ray rocking curves with full widths at half maximum (FWHMs) of 80–100 arcsec, and etch pit densities from 1 106 to 7 106 cm−2. Morphological defect densities for these layers are generally less than 1000 cm−2. Improving Hg flux coverage of the wafer during growth can reduce void defects near the edges of the wafers. Improved tellurium source designs have resulted in better temporal flux stability and a reduction of the center to edge x-value variation from 9% to only 2%. Photovoltaic MWIR detectors have been fabricated from some of these 100mm wafers, and the devices show performance at 140 K which is comparable to other MWIR detectors grown on bulk CdZnTe substrates by MBE and by liquid phase epitaxy.

Third Generation FPA Development Status at Raytheon Vision Systems

Raytheon Vision Systems (RVS) is developing two-color, large-format infrared FPAs to support the US Armys Third Generation FLIR systems. RVS has produced 640 x 480 two-color FPAs with a 20 micron pixel pitch. Work is also underway to demonstrate a 1280 x 720 two-color FPA in 2005. The FPA architecture has been designed to achieve nearly simultaneous temporal detection of the spectral bands while being producible for pixel dimensions as small as 20 microns. Raytheons approach employs a readout integrated circuit (ROIC) with Time Division Multiplexed Integration (TDMI). This ROIC is coupled to bias-selectable two-color detector array with a single contact per pixel. The two-color detector arrays are fabricated from MBE-grown HgCdTe triple layer heterojunction (TLHJ) wafers. The single indium bump design is producible for 20 μm unit cells and exploits mature fabrication processes that are in production at RVS for Second Generation FPAs. This combination allows for the high temporal and spatial color registration while providing a low-cost, highly producible and robust manufacturing process. High-quality MWIR/LWIR (M/L) 640 x 480 TDMI FPAs with have been produced and imaged from multiple fabrication lots. These FPAs have LWIR cutoffs ranging to 11 micron at 78K. These 20 micron pixel FPAs have demonstrated excellent sensitivity and pixel operabilities exceeding 99%. NETDs less than 25 mK at f/5 have been demonstrated for both bands operating simultaneously.

Sensitivity improvements in uncooled microbolometer FPAs

Raytheon IRCOE has developed a family of uncooled, microbolometer FPAs. These FPAs have been designed to address commercial and high-performance military applications. The SB-151 is a high-sensitivity 320 X 240 FPA with 50 micrometers pixels. The SB-151 FPA has been fabricated with several microbolometer pixel designs that allow optimization of either sensitivity or response time. Noise equivalent temperature difference (NETD) values as low as 8.6 mK have been measured for the SB-151 FPAs with f/1 optics. NETD values less than 25 mK have been measured for FPAs with thermal time constants of approximately 18 msec.

Integrated two-color detection for advanced focal plane array (FPA) applications

Integrated two-color detector arrays offer significant system advantages (over separate arrays for each color) where two-color information is required. Using a single array with co-located spectral band sensitivities guarantees perfect pixel registration between the two different spectral band images. These two-color IR detectors can be made in HgCdTe using a pair of back-to-back-diodes incorporated in a triple-layer heterojunction (TLHJ). Use of HgCdTe allows any combination of bands between SWIR and LWIR. TLHJs can be operated in either a sequential or simultaneous mode by leaving the layer common to the two diodes floating or by contacting it. The effect of the choice of spectral bands on the meaning of sequential and simultaneous operation is discussed. State-of-the-art trend line performance for each spectral band of a TLHJ has been demonstrated using an all-LPE HgCdTe technology at SBRC. Mean MWIR RrA of 2 X 107 (Omega) -cm2 and LWIR of 1.6 X 103 (Omega) -cm2 have been shown. Quantum efficiencies are typical of trend line PV HgCdTe. Very high quality imaging has been demonstrated using 64 X 64 sensor chip assemblies in a sequential mode incorporating the above TLHJs. Simultaneous detectors have been made in miniarrays and test structures of various size unit cells. 128 X 128 simultaneous arrays are under study. Imaging and test results (performance and uniformity) for each band are comparable to state-of-the-art single-color HgCdTe arrays.

Microbolometer uncooled infrared camera with 20-mK NETD

Raytheon Systems Company has developed a prototype infrared imaging rifle-sight using an uncooled, microbolometer FPA. The high-sensitivity FPA (SBRC-151) used in the Long-wavelength Staring Sensor (LWSS) was developed by Raytheon Infrared Center of Excellence (IR COE). The NETD (noise equivalent temperature difference) sensitivity of the camera has been measured at 14 mK with f/1 optics and at 74 mK with an f/2.1 aperture stop. Excellent imagery has been demonstrated with the f/2.1 aperture. The 320 X 240 FPA utilizes a high-yield CMOS readout integrated circuit (ROIC) that achieves high sensitivity, low output nonuniformity, and large scene dynamic range. The ROIC provides multi-level, on-chip nonuniformity correction and on-chip temperature compensation. The FPA has 50 micrometer X 50 micrometer pixels and operates at frame rates up to 60 Hz with a single output. The LWSS was characterized by the U.S. Armys NVESD in 1997 using an earlier version of the SBRC-151 FPA. The NVESD measurements validated the Raytheon NETD data. The NVESD evaluation also demonstrated outstanding MRT and spatial noise characteristics. The VOx microbolometer detectors are produced at the Raytheon IR COE facility in Santa Barbara, CA using an advanced dry-etch fabrication process. In addition to the LWSS project, the IR COE has initiated production of the microbolometer FPAs (AE-189) for commercial applications. Over 600 FPAs have been produced on this project, and data is presented for the first 250 FPAs that have been packaged and tested. The pixel operability of the production radiometer FPAs (AE-189) is typically greater than 99.9%.

Status of two-color and large format HgCdTe FPA technology at Raytheon Vision Systems

Raytheon Vision Systems (RVS) is developing two-color and large format single color FPAs fabricated from molecular beam epitaxy (MBE) grown HgCdTe triple layer heterojunction (TLHJ) wafers on CdZnTe substrates and double layer heterojunction (DLHJ) wafers on Si substrates, respectively. MBE material growth development has resulted in scaling TLHJ growth on CdZnTe substrates from 10cm2 to 50cm2, long-wavelength infrared (LWIR) DLHJ growth on 4-inch Si substrates and the first demonstration of mid-wavelength infrared (MWIR) DLHJ growth on 6-inch Si substrates with low defect density (<1000cm-2) and excellent uniformity (composition<0.1%, cut-off wavelength Δcenter-edge<0.1μm). Advanced FPA fabrication techniques such as inductively coupled plasma (ICP) etching are being used to achieve high aspect ratio mesa delineation of individual detector elements with benefits to detector performance. Recent two-color detectors with MWIR and LWIR cut-off wavelengths of 5.5μm and 10.5μm, respectively, exhibit significant improvement in 78K LW performance with >70% quantum efficiency, diffusion limited reverse bias dark currents below 300pA and RA products (zero field-of-view, +150mV bias) in excess of 1×103 Ωcm2. Two-color 20μm unit-cell 1280×720 MWIR/LWIR FPAs with pixel response operability approaching 99% have been produced and high quality simultaneous imaging of the spectral bands has been achieved by mating the FPA to a readout integrated circuit (ROIC) with Time Division Multiplexed Integration (TDMI). Large format mega pixel 20μm unit-cell 2048×2048 and 25μm unit-cell 2560×512 FPAs have been demonstrated using DLHJ HgCdTe growth on Si substrates in the short wavelength infrared (SWIR) and MWIR spectral range. Recent imaging of 30μm unit-cell 256×256 LWIR FPAs with 10.0-10.7μm 78K cut-off wavelength and pixel response operability as high as 99.7% show the potential for extending HgCdTe/Si technology to LWIR wavelengths.

High-sensitivity (25-μm pitch) microbolometer FPAs and application development

Raytheon Infrared Operations (RIO) has achieved a significant technical breakthrough in uncooled FPAs by reducing the pixel size by a factor of two while maintaining state-of-the-art sensitivity. Raytheon has produced high-quality 320 X 240 microbolometer FPAs with 25 μm pitch pixels. The 320 X 240 FPAs have a sensitivity that is comparable to microbolometer FPAs with 50 micrometers pixels. The average NETD value for these FPAs is about 35 mK with an f/1 aperture and operating at 30 Hz frame rates. Good pixel operability and excellent image quality have been demonstrated. Pixel operability is greater than 99% on some FPAs, and uncorrected responsivity nonuniformity is less than 4% (sigma/mean). The microbolometer detectors also have a relatively fast thermal time constant of approximately 10 msec. This state-of-the-art performance has been achieved as a result of an advanced micromachining fabrication process. The process allows maximization of both the thermal isolation and the optical fill-factor. The reduction in pixel size offers several potential benefits for IR systems. For a given system resolution (IFOV) requirement, the 25 μm pixels allow a factor of two reduction in both the focal length and aperture size of the sensor optics. The pixel size reduction facilitates a significant FPA cost reduction since the number of die printed on a wafer can be increased. The pixel size reduction has enabled the development of a large-format 640 X 512 FPA array applicable to wide-field-of-view, long range surveillance and targeting missions, and a 160 X 128 array where applications for miniaturization and temperature invariance are required as well as low cost and low power.

Wide-FOV FPAs for a shipboard distributed aperture system

The Navy faces an ever evolving threat scenario, ranging from sub-sonic sea skimming cruise missiles to newer, unconventional threats such as that experienced by the USS Cole. Next generation naval technology development programs are developing “stealthy” ships by reducing a ships radar cross section and controlling electromagnetic emissions. To meet these threat challenges in an evolving platform environment, ONR has initiated the “Wide Aspect MWIR Array” program. In support of this program, Raytheon Vision Systems (RVS) is developing a 2560 X 512 element focal plane array, utilizing Molecular Beam Epitaxially grown HgCdTe on silicon detector technology. RVS will package this array in a sealed Dewar with a long-life cryogenic cooler, electronics, on-gimbal power conditioning and a thermal reference source. The resulting sub system will be a component in a multi camera distributed aperture situation awareness sensor, which will provide continuous surveillance of the horizon. We will report on the utilization of MWIR Molecular Beam Epitaxial HgCdTe on Silicon material for fabrication of the detector arrays. Detector arrays fabricated on HgCdTe/Si have no thermal expansion mismatch relative to the readout integrated circuits. Therefore large-area focal plane arrays (FPAs) can be developed without concern for thermal cycle reliability. In addition these devices do not require thinning or reticulation like InSb FPAs to yield the high levels of Modulation Transfer Function (MTF) required by a missile warning sensor. HgCdTe/Si wafers can be scaled up to much larger sizes than the HgCdTe/CdZnTe wafers. Four-inch-diameter HgCdTe/Si wafers are currently being produced and are significantly larger than the standard 1.7 inch x 2.6 inch HgCdTe/CdTe wafers. The use of Si substrates also enables the use of automated semiconductor fabrication equipment.