J.C. Regnault

Gain characteristics of a 1.5 μm nonlinear split contact laser amplifier

The gain characteristics of a 1.5 μm split contact nonlinear laser amplifier are reported. With an input power of −51 dBm or greater, a nonlinear transfer function was observed with a maximum gain of 26 dB. The maximum pulse repetition frequency for nonlinear gain was 700 MHz.

Absorptive and Dispersive Switching in a Three Region InGaAsP Semiconductor Laser Amplifier at 1·57 μm

Abstract The absorptive and dispersive nonlinear characteristics of a novel three region InGaAsP laser amplifier are presented. Nonlinear amplification is seen over a 15 nm wavelength range. The effects of input power, signal frequency detuning and gain on the nonlinear characteristics are investigated. A 12 GHz transmission bandwidth for the absorptive nonlinearity is found. The device exhibited 16 dB nonlinear gain with a minimum nonlinear threshold of − 25 dBm. The rise time for the nonlinear switching was <350 ps, showing that this type of device has application to high-data-rate optical transmission systems.

Recent progress in high performance InGaAsP optical amplifiers and multiple quantum well devices

Techniques for reducing the polarization sensitivity and suppressing the facet reflectivity of semiconductor optical amplifiers are reviewed. Results for 1.3- and 1.5- mu m amplifiers are discussed. The benefits of multiple-quantum-well (MQW) devices are demonstrated by enhanced tuning range external cavity devices and by high-saturated-output-power, fast-gain-recovery amplifiers.<<ETX>>