P.C. Spurdens

The role of MOVPE in the manufacture of high performance InP based optoelectronic devices

Abstract This paper describes, for the first time, the development of atmospheric pressure MOVPE growth for the large scale production of InP based opto-electronic devices. Results are presented on material quality, large area uniformity, device performance, yield and reliability, both in an R&D environment and in the production facility to demonstrate that InP based MOVPE technology has now made the crucial transition from the research and development area into large scale production.

Characterization of InP to GaInAs and GaInAs to InP interfaces using tilted cleaved corner TEM

Abstract The processes occurring during continuous and purged MOVPE growth of InP to GaInAs and GaInAs to InP interfaces have been investigated. Characterization was cleaved corner TEM, using tilted interface fringes observed in 202-type images which been investigated. Characterization was by cleaved corner TEM, using tiltedinterface fringes observed in 202-type images which give information on the sign and the magnitude of the mismatch. Structures with InP and GaInAs paused under both arsine and phosphine have also been examined to aid interpretation. The results indicate that under continuous growth conditions, the InP to GaInAs interface is positively mismatched, while the GaInAs to InP interface is negatively mismatched. It is suggested that this is due to rapid surface substitution of the group V species. At purged interfaces, additional, sub-surface substitution may also occur.

Interface broadening in as-grown MOVPE InPGaInAs MQW structures: dominant intermixing of group V elements directly revealed by Auger analysis of a chemically bevelled section

Abstract The quality of a 100 period InP GaInAs multiquantum well stack grown by metalorganic vapour phase epitaxy has been assessed by transmission electron microscopy on cleaved corners and Auger analysis of chemically bevelled sections. A trend from sharp to diffuse interfaces was found from the top to the base of the stack. Direct measurement of the variation of each matrix element by Auger electron imaging clearly showed that this interface broadening is dominated by intermixing of the group V elements. The effect is consistent with thermally induced diffusion and was found to be partially suppressed within a sulphur diffused region.

The influence of growth conditions on the planarity of MOVPE grown GaInAs(P) interfaces

Abstract Lattice matched InP based GaInAs(P) heterostructures grown by AP-MOVPE have been examined by TEM. Although interfaces appear compositionally abrupt to 1 nm or better, undulations are sometimes observed at GaInAs(P) to InP interfaces that appear to be associated with gas switching procedure. Where this phenomenon is observed we have investigated the influence of growth pauses and growth rate. We find that suitable choices of both these parameters can be used to advantage in improving interface flatness.

The influence of PCl/sub 3/ on planarisation and selectivity of InP regrowth by atmospheric pressure MOVPE

The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed.

Recent progress in high performance InGaAsP optical amplifiers and multiple quantum well devices

Techniques for reducing the polarization sensitivity and suppressing the facet reflectivity of semiconductor optical amplifiers are reviewed. Results for 1.3- and 1.5- mu m amplifiers are discussed. The benefits of multiple-quantum-well (MQW) devices are demonstrated by enhanced tuning range external cavity devices and by high-saturated-output-power, fast-gain-recovery amplifiers.<<ETX>>