W.J. Devlin
BT Group
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Publication
Featured researches published by W.J. Devlin.
Journal of Crystal Growth | 1988
A.W. Nelson; P.C. Spurdens; S. Cole; R.H. Walling; R.H. Moss; S. Wong; M.J. Harding; D.M. Cooper; W.J. Devlin; M.J. Robertson
Abstract This paper describes, for the first time, the development of atmospheric pressure MOVPE growth for the large scale production of InP based opto-electronic devices. Results are presented on material quality, large area uniformity, device performance, yield and reliability, both in an R&D environment and in the production facility to demonstrate that InP based MOVPE technology has now made the crucial transition from the research and development area into large scale production.
Applied Physics Letters | 1988
I. W. Marshall; M. J. O’Mahony; D. M. Cooper; P. J. Fiddyment; J.C. Regnault; W.J. Devlin
The gain characteristics of a 1.5 μm split contact nonlinear laser amplifier are reported. With an input power of −51 dBm or greater, a nonlinear transfer function was observed with a maximum gain of 26 dB. The maximum pulse repetition frequency for nonlinear gain was 700 MHz.
Journal of Modern Optics | 1990
Peter Edward Barnsley; I. W. Marshall; H. J. Wickes; P. J. Fiddyment; J.C. Regnault; W.J. Devlin
Abstract The absorptive and dispersive nonlinear characteristics of a novel three region InGaAsP laser amplifier are presented. Nonlinear amplification is seen over a 15 nm wavelength range. The effects of input power, signal frequency detuning and gain on the nonlinear characteristics are investigated. A 12 GHz transmission bandwidth for the absorptive nonlinearity is found. The device exhibited 16 dB nonlinear gain with a minimum nonlinear threshold of − 25 dBm. The rise time for the nonlinear switching was <350 ps, showing that this type of device has application to high-data-rate optical transmission systems.
international conference on indium phosphide and related materials | 1990
W.J. Devlin; D.M. Cooper; P.C. Spurdens; G. Sherlock; M. Bagley; J.C. Regnault; D.J. Elton
Techniques for reducing the polarization sensitivity and suppressing the facet reflectivity of semiconductor optical amplifiers are reviewed. Results for 1.3- and 1.5- mu m amplifiers are discussed. The benefits of multiple-quantum-well (MQW) devices are demonstrated by enhanced tuning range external cavity devices and by high-saturated-output-power, fast-gain-recovery amplifiers.<<ETX>>
Electronics Letters | 1983
R. Wyatt; W.J. Devlin
Electronics Letters | 1985
M.R. Matthews; K.H. Cameron; R. Wyatt; W.J. Devlin
Electronics Letters | 1989
S. Cole; D.M. Cooper; W.J. Devlin; Andrew D. Ellis; D.J. Elton; J.J. Isaac; G. Sherlock; P.C. Spurdens; W.A. Stallard
Electronics Letters | 1990
M. Bagley; G. Sherlock; D.M. Cooper; L.D. Westbrook; D.J. Elton; H.J. Wickes; P.C. Spurdens; W.J. Devlin
Electronics Letters | 1984
R. Wyatt; D.W. Smith; T.G. Hodgkinson; R.A. Harmon; W.J. Devlin
Electronics Letters | 1990
M. Bagley; R. Wyatt; D.J. Elton; H.J. Wickes; P.C. Spurdens; C.P. Seltzer; D.M. Cooper; W.J. Devlin
