Eliot D. Specht

High critical current density superconducting tapes by epitaxial deposition of YBa2Cu3Ox thick films on biaxially textured metals

A method to obtain long lengths of flexible, biaxially oriented substrates with smooth, chemically compatible surfaces for epitaxial growth of high‐temperature superconductors is reported. The technique uses well established, industrially scalable, thermomechanical processes to impart a strong biaxial texture to a base metal. This is followed by vapor deposition of epitaxial buffer layers (metal and/or ceramic) to yield chemically compatible surfaces. Epitaxial YBa2Cu3Ox films grown on such substrates have critical current densities exceeding 105 A/cm2 at 77 K in zero field and have field dependencies similar to epitaxial films on single crystal ceramic substrates. Deposited conductors made using this technique offer a potential route for the fabrication of long lengths of high‐Jc wire capable of carrying high currents in high magnetic fields and at elevated temperatures.

Epitaxial YBa2Cu3O7 on Biaxially Textured Nickel (001): An Approach to Superconducting Tapes with High Critical Current Density

In-plane—aligned, c axis—oriented YBa2Cu3O7 (YBCO) films with superconducting critical current densities Jc as high as 700,000 amperes per square centimeter at 77 kelvin have been grown on thermomechanically rolled-textured nickel (001) tapes by pulsed-laser deposition. Epitaxial growth of oxide buffer layers directly on biaxially textured nickel, formed by recrystallization of cold-rolled pure nickel, made possible the growth of YBCO films 1.5 micrometers thick with superconducting properties that are comparable to those observed for epitaxial films on single-crystal oxide substrates. This result represents a viable approach for the production of long superconducting tapes for high-current, high-field applications at 77 kelvin.

Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon

Thin‐film epitaxial structures of BaSi2, BaO, and BaTiO3, have been grown on the (001) face of silicon using ultrahigh vacuum, molecular beam epitaxy (MBE) methods. Source shuttering for the metal species coordinated with a pulsed, or cyclic, oxygen arrival at the growing oxide surfaces significantly improves film quality. The epitaxial growth of BaO is accomplished without silica formation at the BaO/Si interface by stabilizing BaSi2 as a submonolayer template structure. In situ ellipsometric measurements of the indices of refraction for BaO and for BaTiO3 in a BaTiO3/BaO/Si multilayer gave n=1.96 for BaO and n=2.2 for the BaTiO3, within 10% of their bulk values. These values suggest that this structure can be developed as an optical waveguide. BaO is impermeable to silicon for films as thin as 10 nm at temperatures as high as 800 °C, and good epitaxy can be obtained from room temperature to 800 °C. The epitaxy is such that BaTiO3(001)∥BaO(001)∥Si(001) and BaTiO 3〈110〉∥BaO〈100〉∥Si〈100〉.

Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation

Abstract This paper describes the development of two buffer layer architectures on rolled-Ni substrates using an electron beam evaporation technique. The first buffer layer architecture consists of an epitaxial laminate of CeO 2 /Pd/Ni. The second alternative buffer layer consistes of an epitaxial laminate of YSZ/CeO 2 /Ni. The cube (100) texture in the Ni was produced by cold-rolling followed by recrystallization. The CeO 2 films were grown epitaxially on both Pd-buffered and textured-Ni substrates. The YSZ films were grown epitaxially on CeO 2 -buffered Ni substrates. The crystallographic orientation of the Pd, CeO 2 , and YSZ films were all (100). We also studied the effect of CeO 2 layer thickness and crack formation on textured-Ni substrates. The layer thickness was found to be critical. For some thickness, cracks formed in the CeO 2 layer. The presence of YSZ layers on the CeO 2 layers seem alleviate the cracks that are formed underneath. Our SEM studies showed that both CeO 2 (3–10 nm thick underlayer) and YSZ layers were smooth and continuous.

Deposition of biaxially-oriented metal and oxide buffer-layer films on textured Ni tapes: new substrates for high-current, high-temperature superconductors

Abstract Techniques are reported for sputter deposition of biaxially oriented buffer-layers on textured Ni tapes. These buffered tapes can be employed as long, flexible, or large area substrates for biaxially-aligned high-temperature superconductors (HTS) with high critical current density Jc. Using deposition techniques at temperatures as low as 25°C, epitaxial Pd or Pt films were first deposited as a base layer on the textured Ni tapes, followed by deposition of biaxially oriented Ag or CeO2 buffer layers. Using Ar/4%H2 sputter gas, biaxially oriented CeO2 films were also grown directly on the textured Ni tapes, followed by the epitaxial growth of YSZ films. All the films show both strong in-plane and out-of-plane orientations. The effects of Ni surface smoothness on buffer-layer texture were also investigated.

Recent progress in the fabrication of high-Jc tapes by epitaxial deposition of YBCO on RABiTS

Abstract Progress made in the fabrication of rolling assisted biaxially textured substrates (RABiTS) and epitaxial deposition or formation of HTS on such substrates is reported. Significant progress has been made in understanding the role of meso-scale defects such as grain boundaries on long-range current flow of HTS conductors made using the RABiTS approach. Both experimental and theoretical calculations suggest that in well-textured samples these commonly present defects do not provide an intrinsic barrier to current flow in long-length conductors. Significant progress has also been made in the reel-to-reel deposition of oxide buffer layers and in the fabrication of long-length superconductors using the ex situ BaF 2 technique. Finally, non-magnetic, mechanically strengthened, biaxially textured metal templates have been fabricated with high quality oxide buffer layers. Epitaxial formation of YBCO on such substrates yields critical current densities over 1 MA/cm 2 at 77 K, 0 T.

Growth of biaxially textured RE2O3 buffer layers on rolled-Ni substrates using reactive evaporation for HTS-coated conductors

In an effort to develop alternative single buffer layer architectures for YBCO (YBa2Cu3O7-y) coated conductors, we have studied RE2O3 (RE = Y, and rare earths) as candidate materials. High-quality Y2O3, Gd2O3 and Yb2O3 buffer layers were grown epitaxially on biaxially textured Ni (100) substrates using reactive electron beam evaporation. Using thermodynamic considerations for the formation of metal oxides, we employed both reducing atmospheres and water vapour to oxidize the film in situ to form stoichiometric RE2O3. We have also prevented NiO formation at the substrate-film interface during this process. Detailed x-ray studies have shown that the Y2O3, Gd2O3 and Yb2O3 films were grown with a single epitaxial orientation. The lattice mismatch between YBCO and Gd2O3 was small as compared with that of YBCO with other rare earth oxides. SEM micrographs indicated that ~0.5 ?m thick Y2O3 films on rolled-Ni substrates were dense, continuous and crack free. A high Jc of 1.8 ? 106 A cm-2 at 77 K and self-field was obtained on YBCO films grown on alternative buffer layers with a layer sequence of YBCO/Yb2O3 (sputtered)/Y2O3 (e-beam)/Ni.

Metallization of vanadium dioxide driven by large phonon entropy

Phase competition underlies many remarkable and technologically important phenomena in transition metal oxides. Vanadium dioxide (VO2) exhibits a first-order metal–insulator transition (MIT) near room temperature, where conductivity is suppressed and the lattice changes from tetragonal to monoclinic on cooling. Ongoing attempts to explain this coupled structural and electronic transition begin with two alternative starting points: a Peierls MIT driven by instabilities in electron–lattice dynamics and a Mott MIT where strong electron–electron correlations drive charge localization. A key missing piece of the VO2 puzzle is the role of lattice vibrations. Moreover, a comprehensive thermodynamic treatment must integrate both entropic and energetic aspects of the transition. Here we report that the entropy driving the MIT in VO2 is dominated by strongly anharmonic phonons rather than electronic contributions, and provide a direct determination of phonon dispersions. Our ab initio calculations identify softer bonding in the tetragonal phase, relative to the monoclinic phase, as the origin of the large vibrational entropy stabilizing the metallic rutile phase. They further reveal how a balance between higher entropy in the metal and orbital-driven lower energy in the insulator fully describes the thermodynamic forces controlling the MIT. Our study illustrates the critical role of anharmonic lattice dynamics in metal oxide phase competition, and provides guidance for the predictive design of new materials.

Uniform performance of continuously processed MOD-YBCO-coated conductors using a textured Ni?W substrate

Second-generation coated conductor composite HTS wires have been fabricated using a continuous reel-to-reel process with deformation-textured Ni–W substrates and a metal-organic deposition process for YBa2Cu3O7−x. Earlier results on 1 m long and 1 cm wide wires with 77 K critical current performance greater than 100 A cm−1 width have now been extended to 7.5 m in length and even higher performance, with one wire at 132 and another at 127 A cm−1 width. Performance as a function of wire length is remarkably uniform, with only 2–4% standard deviation when measured on a 50 cm length scale. The length-scale dependence of the deviation is compared with a statistical calculation.

Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties

We have demonstrated a route to epitaxial Pb(Zr0.2Ti0.8)O3 on (001) Si that exhibits a uniform piezoelectric response down to nanoscale levels through the utilization of an insulating, single-crystalline SrTiO3 transition layer. These structures, which were grown by a combination of molecular-beam epitaxy and off-axis magnetron sputtering, have a surface roughness of <5 A, with piezoelectric microscopy measurements revealing a piezoelectric coefficient of ∼50 pm/V that is switchable down to sub-100-nm dimensions.