J.E. Alfonso

Optoelectronic study in porous silicon thin films

A photoconductivity (PC) study in as deposited porous silicon (PS) thin films is presented in this work. PS thin films were produced by the electrochemical anodizing method at different anodizing times. The films surfaces were characterized by SEM and porosity was determined by gravimetric methods. Photoluminescence and PC measurements were taken at room temperature. The maximum of the photoluminescence spectra are located around 650nm, whereas those of PC are placed around 400nm. The maximum of the photoluminescence signal shifts toward short wavelengths as the quantum dimension of the material skeleton diminishes, while any spectral displacement of the photocurrent signal as the porosity of the material increases is not observed. The spectral position of the PC signal does not change because it is strongly affected by the large quantity of defects present in the sample surface which diminishes the mean free path of the carriers to reach the electrodes. In all the samples photocurrent is small around 10-1μA and the intensity of the signal goes down as the porosity increases. Two mechanisms exist that compete with one another, the carrier generation and recombination through light emission centers which diminish the photocurrent.

Potentiodynamic Polarization Studies and Surface Chemical Composition of Bismuth Titanate (BixTiyOz) Films Produced through Radiofrequency Magnetron Sputtering

The applications of Bismuth Titanate (BixTiyOz) materials have been focused on their electronic and optical properties, but with respect to the use of these compounds in applications like corrosion resistance, have been very few or nonexistent. For this reason, in the present investigation BixTiyOz thin films were deposited using RF magnetron sputtering onto silicon wafers, stainless steel 316L, and titanium alloy (Ti6Al4V) substrates, in order to carry out a study of the corrosion behavior of this compound. The structural properties of the coatings were studied through X-ray diffraction (XRD), the morphology was determined using Scanning Electron Microscopy (SEM), the corrosion resistance behavior of the coated and uncoated substrates was evaluated via the Potentiodynamic Polarization technique, and surface chemical composition was evaluated through X-ray photoelectron spectroscopy (XPS). The XRD results indicated that the films were amorphous. The SEM micrographs showed that the deposited films were homogeneous, but in some cases there were cracks. The potentiodynamic polarization technique showed that the corrosion current in the coated substrates decreased by an order of two magnitudes with respect to the uncoated substrates, but in both cases the corrosion mechanism was pitting due to the pores in the film. The XPS analysis shows that the deposited films contain both Bi3+ and Ti4+.

Annealing Effect on the Structural and Optical Properties of Sputter-Grown Bismuth Titanium Oxide Thin Films

The aim of this work is to assess the evolution of the structural and optical properties of BixTiyOz films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220–250 nm have been successfully grown. After annealing treatment at 600 °C the films show excellent transparency and full crystallization. It is shown that to achieve larger crystallite sizes, up to 17 nm, it is better to carry the annealing under dry air than under oxygen atmosphere, probably because the nucleation rate is reduced. The refractive index of the films is similar under both atmospheres and it is very high (n =2.5 at 589 nm). However it is still slightly lower than that of the single crystal value due to the polycrystalline morphology of the thin films.

Structural and morphological behavior of bismuth thin films grown through DC-magnetron sputtering

espanolEn este trabajo se depositaron peliculas delgadas de bismuto sobre sustratos de vidrio mediante la tecnica de sputtering con magnetron DC y se evaluaron los efectos de la temperatura del sustrato en la microestructura de las peliculas. El comportamiento estructural se analizo mediante difraccion de rayos X, mostrando una notable influencia de la temperatura del sustrato en el tamano de cristalito y microestres. La morfologia evaluada por medio de imagenes de la microsonda electronica, presento una leve diferencia en el tamano de grano con el incremento de la temperatura asi como un significativo incremento de la rugosidad superficial, segun medidas de perfilometria. EnglishBismuth thin films were grown onto glass substrates through the DC magnetron sputtering technique. The effects of substrate temperature on the microstructure of the films were evaluated. The structural behavior was analyzed via X-ray diffraction, and it showed a marked influence of the substrate temperature on the crystallite size and the micro-stress. The morphologies evaluated through Electron Probe Micro-analyzer images indicated a slight difference in the grain size with an increase in temperature as well as a significant increase in surface roughness, according to profilometer measurements.

Hysteresis loop behaviors of ferroelectric thin films： A Monte Carlo simulation study

The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal (x-y) direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.