J. L. Robert

Weak antilocalization and spin precession in quantum wells

The results of magnetoconductivity measurements in

High sensitivity hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures

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Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations

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High temperature electrical investigations of (Al, Ga)N/GaN heterostructures: Hall sensor applications

As quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed that takes into account both linear and cubic in electron wave-vector terms in spin splitting, which arise due to the lack of inversion center in the crystal, as well as the linear terms that appear when the well itself is asymmetric. It is established that, unlike spin-relaxation rate, contributions of different terms into magnetoconductivity are not additive. It is demonstrated that in the interval of electron densities under investigation [(0.98-1.85)ifmmodetimeselsetexttimesfi{}

High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures

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Pressure study of metastability in Ga1-xAlxAs/GaAs:Si heterojunctions.

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Study of Quantum and Classical Scattering Times in Pseudomorphic AlGaAs/InGaAs/GaAs by Means of Pressure

] all three contributions are comparable and have to be taken into account to achieve a good agreement between the theory and experiment. The results obtained from comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin-relaxation in quantum wells and to improve the accuracy of determination of spin-splitting parameters in

Direct evidence for screening of the Coulomb interaction in quasi-two-dimensional systems

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