J. U. Yoon

CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band

Submicrometer silicon photodiode waveguides, fabricated on silicon-on-insulator substrates, have photoresponse from <1270 to 1740 nm (0.8 AW-1 at 1550 nm) and a 3-dB bandwidth of 10 to 20 GHz. The p-i-n photodiode waveguide consists of an intrinsic waveguide 500times250 nm where the optical mode is confined and two thin, 50-nm-thick, doped Si wings that extend 5 mum out from either side of the waveguide. The Si wings, which are doped one p-type and the other n-type, make electric contact to the waveguide with minimal effect on the optical mode. The edges of the wings are metalized to increase electrical conductivity. Ion implantation of Si+ 1times10 13 cm-2 at 190 keV into the waveguide increases the optical absorption from 2-3 dBmiddotcm-1 to 200-100 dBmiddotcm-1 and causes the generation of a photocurrent when the waveguide is illuminated with subbandgap radiation. The diodes are not damaged by annealing to 450 degC for 15 s or 300 degC for 15 min. The photoresponse and thermal stability is believed due to an oxygen stabilized divacancy complex formed during ion implantation

Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW -1 response

SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. Photodiodes have a bandwidth of >35 GHz, an internal quantum efficiency of 0.5 to 10 AW-1, and leakage currents of 0.5 nA to 0.5 microA. Phototransistors have an optical response of 50 AW-1 with a bandwidth of 0.2 GHz. These properties are related to carrier mobilities in the implanted Si waveguide. These detectors exhibit low optical absorption requiring lengths from <0.3 mm to 3 mm to absorb 50% of the incoming light. However, the high bandwidth, high quantum efficiency, low leakage current, and potentially high fabrication yields, make these devices very competitive when compared to other detector technologies.

CMOS-compatible dual-output silicon modulator for analog signal processing.

A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.

All silicon infrared photodiodes: photo response and effects of processing temperature

CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si(+) implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475 degrees C. 0.25-mm-long diodes annealed to 300 degrees C have a response to 1539 nm radiation of 0.1 A W-(-1) at a reverse bias of 5 V and 1.2 A W(-1) at 20 V. 3-mm-long diodes processed to 475 degrees C exhibited two states, L1 and L2, with photo responses of 0.3 +/-0.1 A W(-1) at 5 V and 0.7 +/-0.2 A W(-1) at 20 V for the L1 state and 0.5 +/-0.2 A W(-1) at 5 V and 4 to 20 A W(-1)-1 at 20 V for the L2 state. The diodes can be switched between L1 and L2. The bandwidths vary from 10 to 20 GHz. These diodes will generate electrical power from the incident radiation with efficiencies from 4 to 10 %.

Design of a ground-based optical receiver for the lunar laser communications demonstration

In this paper we present a design for a photoncounting optical receiver—based on superconducting NbN nanowire detector arrays—that will be employed in the ground terminal for the NASA Lunar Laser Communications Demonstration. The ground receiver is designed with four, 40 cm apertures, each coupled to a novel multi-mode polarization-maintaining fiber. The receiver is designed to receive a variable-rate pulse-position-modulated signal with a maximum data rate of 622 Mb/s.

Photonic Analog-to-Digital Conversion with Electronic-Photonic Integrated Circuits

Photonic Analog-to-Digital Conversion (ADC) has a long history. The premise is that the superior noise performance of femtosecond lasers working at optical frequencies enables us to overcome the bottleneck set by jitter and bandwidth of electronic systems and components. We discuss and demonstrate strategies and devices that enable the implementation of photonic ADC systems with emerging electronic-photonic integrated circuits based on silicon photonics. Devices include 2-GHz repetition rate low noise femtosecond fiber lasers, Si-Modulators with up to 20 GHz modulation speed, 20 channel SiN-filter banks, and Ge-photodetectors. Results towards a 40GSa/sec sampling system with 8bits resolution are presented.

High Speed Analog-to-Digital Conversion with Silicon Photonics

Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADCs by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a VπL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.

Silicon Electronic Photonic Integrated Circuits for High Speed Analog to Digital Conversion

Integrated optical components on the silicon platform and optically enhanced electronic sampling circuits are demonstrated that enable the fabrication of a variety of electronic-photonic A/D converter chips surpassing currently available technology in sampling speed and resolution

Integrated Optical Components in Silicon for High Speed Analog-to- Digital Conversion

Advances in femtosecond lasers and laser stabilization have led to the development of sources of ultrafast optical pulse trains that show jitter on the level of a few femtoseconds over tens of milliseconds and over seconds if referenced to atomic frequency standards. These low jitter sources can be used to perform opto-electronic analog to digital conversion that overcomes the bottleneck set by electronic jitter when using purely electronic sampling circuits and techniques. Electronic Photonic Integrated Circuits (EPICs) may enable in the near future to integrate such an opto-electronic analog-to-digital converters (ADCs) completely. This presentation will give an overview of integrated optical devices such as low jitter lasers, electro-optical modulators, Si-based filter banks, and high-speed Si-photodetectors that are compatible with standard CMOS processing and which are necessary for the implementation of EPIC-chips for advanced opto-electronic ADCs.

A fiber-coupled photon-counting optical receiver based on NbN superconducting nanowires for the Lunar Laser Communication Demonstration

We have designed and demonstrated a multimode fiber-coupled optical receiver based on NbN superconducting nanowires for the Lunar Laser Communications Demonstration and achieved error-free operation at 622 Mb/s over the ~400,000 km link.