J.V. Pinto

Enhanced electron screening in d(d, p)t for deuterated Ta

Abstract:The recent observation of a large electron screening effect in the d(d, p)t reaction using a deuterated Ta target has been confirmed using somewhat different experimental approaches: Ue = 309±12 eV for the electron screening potential energy. The high Ue value arises from the environment of the deuterons in the Ta matrix, but a quantitative explanation is missing.

A new setup for the underground study of capture reactions

For the study of astrophysically relevant capture reactions in the underground laboratory LUNA a newsetup of high sensitivity has been implemented. The setup includes a windowless gas target, a 4p BGO summing crystal, and beam calorimeters. The setup has been recently used to measure the d(p,g) 3 He cross-section for the first time within its solar Gamowpeak, i.e. dow n to 2.5 keV c.m. energy. The features of the optimized setup are described. r 2002 Elsevier Science B.V. All rights reserved.

Ion sensing (EIS) real-time quantitative monitorization of isothermal DNA amplification.

Field-effect-based devices are becoming a basic structural element in a new generation of microbiosensors. Reliable molecular characterization of DNA and/or RNA is of paramount importance for disease diagnostics and to follow up alterations in gene expression profiles. The use of such devices for point-of-need diagnostics has been hindered by the need of standard or real-time PCR amplification procedures. The present work focuses on the development of a tantalum pentoxide (Ta2O5) based sensor for the real-time label free detection of DNA amplification via loop mediated isothermal amplification (LAMP) allowing for quantitative analysis of the cMYC proto-oncogene. The strategy based on the field effect sensor was tested within a range of 1 × 10(8)-10(11) copies of target DNA, and a linear relationship between the log copy number of the initial template DNA and threshold time was observed allowing for a semi-quantitative analysis of DNA template. The concept offers many of the advantages of isothermal quantitative real-time DNA amplification in a label free approach and may pave the way to point-of-care quantitative molecular analysis focused on ease of use and low cost.

p-Type

Thin-films of copper oxide (Cu<i>x</i>O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure (O_PP). A metallic Cu film with cubic structure obtained from 0% O_PP has been transformed to cubic Cu₂O phase for the increase in O_PP to 9% but then changed to monoclinic CuO phase (for O_PP ≥ 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu<i>x</i>O films produced with O_PP ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.

{\hbox{Cu}}_{x}{\hbox{O}}

In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc-tin-oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value.

Films Deposited at Room Temperature for Thin-Film Transistors

Abstract A method for proton-induced γ-ray analysis (PIGE) of Li (either elemental or isotopic composition) in thick samples is presented in this work, which is based on a code that integrates the nuclear reaction excitation function, measured at the same experimental conditions, along the depth of the sample. The energy steps needed to define accurately the excitation function are used as energy intervals for the integration procedure. The excitation function and cross-sections of the reaction 7 Li (p,p′γ)7Li, for protons in the energy range 0.60–2.5 MeV, were obtained and used as input to calculate lithium concentrations in thick and intermediate samples. The calculated thick target yields of samples with several amounts of lithium were compared with the respective measured yields, showing that this is a reliable and accurate method for PIGE analysis of Li in thick samples.

Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors

We present a new approach for real-time monitoring of PCR amplification of a specific sequence from the human c-MYC proto-oncogene using a Ta(2)O(5) electrolyte-insulator-semiconductor (EIS) sensor. The response of the fabricated EIS sensor to cycle DNA amplification was evaluated and compared to standard SYBR-green fluorescence incorporation, showing it was possible to detect DNA concentration variations with 30 mV/μM sensitivity. The sensors response was then optimized to follow in real-time the PCR amplification of c-MYC sequence from a genomic DNA sample attaining an amplification profile comparable to that of a standard real-time PCR. Owing to the small size, ease of fabrication and low-cost, the developed Ta(2)O(5) sensor may be incorporated onto a microfluidic device and then used for real-time PCR. Our approach may circumvent the practical and economical obstacles posed by current platforms that require an external fluorescence detector difficult to miniaturize and incorporate into a lab-on-chip system.

Proton-induced γ-ray analysis of lithium in thick samples

The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75%, and the light induced instability is reduced by 35%. The operational stability is quantified by fitting the threshold voltage shift with a stretched exponential model. Storage time as long as 7 months does not cause any measurable degradation on the electrical performance. It is proposed that parylene plays not only the role of an encapsulation layer but also of a defect passivation on the top semiconductor surface. It is also reported that depletion-mode TFTs are less sensitive to light induced instabilities. This is attributed to a defect neutralization process in the presence of free electrons.

Real-time monitoring of PCR amplification of proto-oncogene c-MYC using a Ta2O5 electrolyte–insulator–semiconductor sensor

The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Taskers type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.

Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, Ta2O5:SiO2 as the dielectric and Ta2O5 as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4-pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.