Elvira Fortunato

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19V, a saturation mobility of 27cm2∕Vs, a gate voltage swing of 1.39V∕decade and an on/off ratio of 3×105. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.

Zinc oxide as an ozone sensor

This work presents a study of intrinsic zinc oxide thin film as ozone sensor based on the ultraviolet (UV) photoreduction and subsequent ozone re oxidation of zinc oxide as a fully reversible process performed at room temperature. The films analyzed were produced by spray pyrolysis, dc and rf magnetron sputtering. The dc resistivity of the films produced by rf magnetron sputtering and constituted by nanocrystallites changes more than eight orders of magnitude when exposed to an UV dose of 4mW∕cm2. On the other hand, porous and textured zinc oxide films produced by spray pyrolysis at low substrate temperature exhibit an excellent ac impedance response where the reactance changes by more than seven orders of magnitude when exposed to the same UV dose, with a response frequency above 15kHz, thus showing improved ozone ac sensing discrimination.

Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors

The role of order and disorder on the electronic performances of n-type ionic oxides such as zinc oxide, gallium zinc oxide, and indium zinc oxide used as active (channel) or passive (drain/source) layers in thin film transistors (TFTs) processed at room temperature are discussed, taking as reference the known behavior observed in conventional covalent semiconductors such as silicon. The work performed shows that while in the oxide semiconductors the Fermi level can be pinned up within the conduction band, independent of the state of order, the same does not happen with silicon. Besides, in the oxide semiconductors the carrier mobility is not bandtail limited and so disorder does not affect so strongly the mobility as it happens in covalent semiconductors. The electrical properties of the oxide films (resistivity, carrier concentration, and mobility) are highly dependent on the oxygen vacancies (source of free carriers), which can be controlled by changing the oxygen partial pressure during the deposition...

High mobility indium free amorphous oxide thin film transistors

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of postannealing temperatures (200, 250, and 300°C) was evaluated and compared with two series of TFTs produced at room temperature (S1) and 150°C (S2) during the channel deposition. From the results, it was observed that the effect of postannealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs (W∕L=50∕50μm) operate in the enhancement mode (n-type), present a high saturation mobility of 24.6cm2∕Vs, a subthreshold gate swing voltage of 0.38V/decade, a turn-on voltage of −0.5V, a threshold voltage of 4.6V, and an Ion∕Ioff ratio of 8×107, satisfying all the requirements to be used as active-matrix backplane.

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

A quantitative study of the dynamics of threshold-voltage shifts with time in gallium-indium zinc oxide amorphous thin-film transistors is presented using standard analysis based on the stretched exponential relaxation. For devices using thermal silicon oxide as gate dielectric, the relaxation time is 3×105 s at room temperature with activation energy of 0.68 eV. These transistors approach the stability of the amorphous silicon transistors. The threshold voltage shift is faster after water vapor exposure suggesting that the origin of this instability is charge trapping at residual-water-related trap sites.

Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x<2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal β-Sn and α-SnOx phases, after annealing at 200 °C. These films exhibit a hole carrier concentration in the range of ≈1016–1018 cm−3; electrical resistivity between 101–102 Ω cm; Hall mobility around 4.8 cm2/V s; optical band gap of 2.8 eV; and average transmittance ≈85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm2/V s and an ON/OFF modulation ratio of 103.

Influence of the post-treatment on the properties of ZnO thin films

Abstract In this work a study of the influence of the annealing treatment (atmosphere and temperature) on the properties of zinc oxide thin films (intrinsic and doped with indium and aluminum) prepared by spray pyrolysis is presented. The result shows that the type of atmosphere (reduction or oxidant) has an important role in the changes observed in the structural, electrical and optical properties of the ZnO thin films. The ZnO thin film doped with indium, presents the lowest resistivity (ρ=5.8×10−3 Ωcm) associated to a high transmittance (T=86%), characteristics required for application on optoelectronic devices.

Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material

During the last years, oxide semiconductors have shown that they will have a key role in the future of electronics. In fact, several research groups have already presented working devices with remarkable electrical and optical properties based on these materials, mainly thin-film transistors (TFTs). Most of these TFTs use indium-tin oxide (ITO) as the material for source/drain electrodes. This paper focuses on the investigation of different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor. The analyzed electrode materials were indium-zinc oxide, Ti, Al, Mo, and Ti/Au, with each of these materials used in two different kinds of devices: one was annealed after GIZO channel deposition but prior to source/drain deposition, and the other was annealed at the end of device production. The results show an improvement on the electrical properties when the annealing is performed at the end (for instance, with Ti/Au electrodes, mobility rises from 19 to 25 cm2/V ldr s, and turn-on voltage drops from 4 to 2 V). Using time-of-flight secondary ion mass spectrometry (TOF-SIMS), we could confirm that some diffusion exists in the source/drain electrodes/semiconductor interface, which is in close agreement with the obtained electrical properties. In addition to TOF-SIMS results for relevant elements, electrical characterization is presented for each kind of device, including the extraction of source/drain series resistances and TFT intrinsic parameters, such as (intrinsic mobility) and VTi (intrinsic threshold voltage).

Performances presented by zinc oxide thin films deposited by spray pyrolysis

Abstract The effect of doping and annealing atmosphere on the performances of zinc oxide thin films prepared by spray pyrolysis have been studied. The results show that the way doping influences the electrical and structural properties depends also on the characteristics of the doping element. Annealing the as-deposited films in an inert atmosphere leads to a substantial reduction in the resistivity of the films deposited and to an increase on the degree of film’s crystallinity.