Jack H. Yuan

Dense vertical programmable read only memory cell structure and processes for making them

Method of making dense flash eeprom semiconductor memory structures

Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers

Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements

Dual floating gate EEPROM cell array with steering gates shared by adjacent cells

Technique of forming over an irregular surface a polysilicon layer with a smooth surface

Processing techniques for making a dual floating gate EEPROM cell array

Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming

Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacers

Non-volatile memory cells utilizing substrate trenches