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Jaeyong Park

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Publication

Featured researches published by Jaeyong Park.

Archive | 2003

Method of formation of semiconductor resistant to hot carrier injection stress

Shiraiwa Hidehiko; Arvind Halliyal; Jaeyong Park

Archive | 2002

ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices

Jaeyong Park; Hidehiko Shiraiwa; Arvind Halliyal; Jean Y. Yang; Inkuk Kang; Tazrien Kamal; Amir H. Jafarpour

Archive | 2004

UV-BLOCKING LAYER FOR REDUCING UV-INDUCED CHARGING OF SONOS DUAL-BIT FLASH MEMORY DEVICES IN BEOL PROCESSING

Minh Van Ngo; Tazrien Kamal; Mark T. Ramsbey; Arvind Halliyal; Jaeyong Park; Ning Cheng; Jeff P. Erhardt; Clarence Ferguson; Jeffrey A. Shields; Angela T. Hui; Robert A. Huertas; Tyagamohan Gottipati

Archive | 2003

Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen

Arvind Halliyal; Amir H. Jafarpour; Hidehiko Shiraiwa; Tazrien Kamal; Mark T. Ramsbey; Jaeyong Park

Archive | 2003

ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices

Hidehiko Shiraiwa; Tazrien Kamal; Mark T. Ramsbey; Inkuk Kang; Jaeyong Park; Rinji Sugino; Jean Y. Yang; Fred T K Cheung; Arvind Halliyal; Amir H. Jafarpour

Archive | 2006

SONOS memory with inversion bit-lines

Hidehiko Shiraiwa; Jaeyong Park; Satoshi Torii; Hideki Arakawa; Masaru Yano

Archive | 2006

Recessed channel with separated ONO memory device

Jaeyong Park; Hidehiko Shiraiwa; Satoshi Torii; Mark T. Ramsbey

Archive | 2003

Structure and method for preventing UV radiation damage in a memory cell and improving contact CD control

Angela Hui; Minh Van Ngo; Ning Cheng; Jaeyong Park; Jean Y. Yang; Hirokazu Tokuno; Kouros Ghandehari; Hidehiko Shiraiwa

Archive | 2003

Structure and method for preventing process-induced UV radiation damage in a memory cell

Angela Hui; Minh Van Ngo; Ning Cheng; Jaeyong Park; Jean Y. Yang; Kouros Ghandehari; Hirokazu Tokuno

Archive | 2005

Aluminum oxide as liner or cover layer to spacers in memory device

Hidehiko Shiraiwa; Satoshi Torii; Jaeyong Park; Joong Jeon

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Collaboration

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Hidehiko Shiraiwa

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Arvind Halliyal

Advanced Micro Devices

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Tazrien Kamal

Advanced Micro Devices

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Jean Y. Yang

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Mark T. Ramsbey

Advanced Micro Devices

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Ning Cheng

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Satoshi Torii

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Amir H. Jafarpour

Advanced Micro Devices

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Hirokazu Tokuno

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Minh Van Ngo

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