Jake Bell

Control of optical mode distribution through etched microstructures for improved broad area laser performance

Etching microstructures into broad area diode lasers is found to lead to more uniform near field and increased power conversion efficiency, arising from increased slope. Self-consistent device simulation indicates that this improvement is due to an increase in the effective internal injection efficiency above threshold—the nonuniform near field leads to regions of inefficient clamping of the carrier density in the laser stripe. Measurements of spontaneous emission through the substrate confirm the predicted carrier profile. Both experiment and theory show that improved overlap between carrier and power distributions correlates with improved slope.

100-W+ Diode Laser Bars Show > 71% Power Conversion from 790- nm to 1000-nm and Have Clear Route to > 85%

Focused development under the DARPA SHEDs program has lead to extremely high power conversion efficiency in the 9xx-nm wavelength band, leading to bars with efficiency in excess of 74%. We review progress in advancing efficiency and detail the route to > 85% at room temperature. The 9xx-nm wavelength band is commercially used for pumping Ytterbium-doped solid-state crystals and fiber lasers - only one of many diode laser markets. Fortunately, the lessons learned under SHEDs are transferable to other wavelengths. We report breakthrough efficiency results in the 8xx-nm band, for example showing 71% power conversion efficiency from 790-nm bars at powers > 100-W for CW and QCW packaging and testing. These wavelengths are required for pumping Neodymium-doped crystals, as used in the majority of fielded high power Diode Pumped Solid-State Laser systems. High efficiency is delivered using low voltage SHEDs designs, in combination with work to optimize the performance of the quantum well.

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

Diode lasers supply high power densities at wavelengths from 635-nm to 2000-nm, with different applications enabled by providing this power at different wavelengths. As the range of available wavelengths broadens, many novel medical and atmospheric applications are enabled. Traditional quantum well lasers provide high performance in the range 635- nm to 1100-nm range for GaAs-based devices and 1280-nm to 2000-nm for InP, leaving a notable gap in the 1100 to 1280-nm range. There are many important medical and sensing applications in this range and quantum dots produced using Stranski-Krastanow self-organized MBE growth on GaAs substrates provide an alternative high performance solution. We present results confirming broad area quantum dot lasers can deliver high optical powers of 16-W per emitter and high power conversion efficiency of 35% in this wavelength range. In addition, there are growing applications for high power sources in wavelengths > 1500-nm. We present a brief review of our current performance status in this wavelength range, both with conventional quantum wells in the 1500-nm to 2500-nm range and MOCVD grown quantum cascade lasers for wavelengths > 4000-nm. At each wavelength, we review the designs that deliver this performance, prospects for increased performance and the potential for further broadening the availability of novel wavelengths for high power applications.

Diode laser bars deliver > 400-W peak CW power from 800-nm to 980-nm enabling wide range of applications

Peak optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wavelengths. Progress to date has allowed us to demonstrate > 400-W peak output from single 1-cm diode laser bars at emission wavelengths from 800-nm to 980-nm. The available range of emission wavelengths has also been increased, with 90-W bars shown at 660-nm, 37W at 1910-nm and 25W at 2070-nm, complementing the 100-W bar previously demonstrated at 1470-nm. Peak power is seen to correlate closely peak power conversion efficiency. Further advances in diode laser efficiency and low thermal resistance packaging technology continue to drive these powers higher. The most critical improvements have been the reduction in the diode laser operating voltage through optimization of hetero-barriers (leading to 74% efficient 100-W bars on micro-channel at 975-nm) and a reduction in packaging thermal resistance by optimizing microchannel performance (leading to < 0.2-°C/W thermal resistance). We have also recently extended our high efficiency designs to shorter wavelengths, now delivering over 70% efficiency at 790-nm. Ever-increasing power levels (projected to eventually exceed 1-kW per bar) reduce the cost in Euro per W of diode laser systems, enabling broader application in military, industrial and medical markets. In addition, increasing availability of high powers at new wavelengths is enabling many new applications.

Pulsed Yb:fiber system capable of >250kW peak power with tunable pulses in the 50ps to 1.5ns range

We have demonstrated a pulsed 1064 nm PM Yb:fiber laser system incorporating a seed source with a tunable pulse repetition rate and pulse duration and a multistage fiber amplifier, ending in a large core (>650 μm2 mode field area), tapered fiber amplifier. The amplifier chain is all-fiber, with the exception of the final amplifier’s pump combiner, allowing robust, compact packaging. The air-cooled laser system is rated for >60 W of average power and beam quality of M2 < 1.3 at repetition rates below 100 kHz to 10’s of MHz, with pulses discretely tunable over a range spanning 50 ps to greater than 1.5 ns. Maximum pulse energies, limited by the onset of self phase modulation and stimulated Raman scattering, are greater than 12.5 μJ at 50 ps and 375 μJ at 1.5 ns , corresponding to >250 kW peak power across the pulse tuning range. We present frequency conversion to 532 nm with efficiency greater than 70% and conversion to UV via frequency tripling, with initial feasibility experiments showing >30% UV conversion efficiency. Application results of the laser in scribing, thin film removal and micro-machining will be discussed.

Stabilization of Lateral Mode Transients in High-Power Broad Area Semiconductor Lasers

In this work, the temporal fluctuations of lateral modes in high-power broad area semiconductor lasers are investigated in the time domain. Index guiding (in the form of etched holes) is introduced as a method of stabilizing and controlling the lateral modes. Spatial control of the lateral modes and subsequent reduction of filamentation / smoothing of the near-field profile has already been predicted and experimentally shown to improve the efficiency of broad area laser diodes. Here, the method is shown to also dampen temporal instabilities (transients) of the lateral modes.

High power semiconductor laser sources for defense and security: a review of current technology

Concepts and markets of semiconductor diode lasers are introduced in the context of Defense and Security applications. Specific, high profile applications are reviewed and current and future diode laser technology is discussed. Advanced diode laser technology as it pertains to Infrared Countermeasures applications is reviewed in detail along with recent 2μm diode laser results and advanced packaging product architectures from nLIGHT.

Room temperature high power mid-IR diode laser bars for atmospheric sensing applications

Peak CW optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wavelengths and the available range of emission wavelengths also continues to increase. Both high efficiency ~ 50% and > 100-W power InP-based CW bars have been available in bar format around 1500-nm for some time, as required for eye-safe illuminators and for pumping Er-YAG crystals. There is increasing demand for sources at longer wavelengths. Specifically, 1900-nm sources can be used to pump Holmium doped YAG crystals, to produce 2100-nm emission. Emission near 2100-nm is attractive for free-space communications and range-finding applications as the atmosphere has little absorption at this wavelength. Diode lasers that emit at 2100-nm could eliminate the need for the use of a solid-state laser system, at significant cost savings. 2100-nm sources can also be used as pump sources for Thulium doped solid-state crystals to reach even longer wavelengths. In addition, there are several promising medical applications including dental applications such as bone ablation and medical procedures such as opthamology. These long wavelength sources are also key components in infra-red-counter-measure systems. We have extended our high performance 1500-nm material to longer wavelengths through optimization of design and epitaxial growth conditions and report peak CW output powers from single 1-cm diode laser bars of 37W at 1910-nm and 25W at 2070-nm. 1-cm bars with 20% fill factor were tested under step-stress conditions up to 110-A per bar without failure, confirming reasonable robustness of this technology. Stacks of such bars deliver high powers in a collimated beam suitable for pump applications. We demonstrate the natural spectral width of ~ 18nm of these laser bars can be reduced to < 3-nm with use of an external Volume Bragg Grating, as required for pump applications. We review the developments required to reach these powers, latest advances and prospects for longer wavelength, higher power and higher efficiency.

Compact, 17W average power, 100kW peak power, nanosecond fiber laser system

We demonstrate a robust, compact, low-cost, pulsed, linearly polarized, 1064 nm, Yb:fiber laser system capable of generating ~100 kW peak power pulses and >17 W average power at repetition rates of 80 – 285 kHz. The system employs a configurable microchip seed laser that provides nanosecond (~1.0 – 1.5 ns) pulse durations. The seed pulses are amplified in an all-fiber, polarization maintaining, large mode area (LMA) fiber amplifier optimized for high peak power operation. The LMA Yb:fiber amplifier enables near diffraction limited beam quality at 100 kW peak power. The seed laser, fiber amplifier, and beam delivery optics are packaged into an air-cooled laser head of 152×330×87 mm3 with pump power provided from a separate air-cooled laser controller. Due to the high peak power, high beam quality, spectral purity, and linearly polarized nature of the output beam, the laser is readily frequency doubled to 532 nm. Average 532 nm powers up to 7 W and peak powers exceeding 40 kW have been demonstrated. Potential for scaling to higher peak and average powers in both the green and infrared (IR) will be discussed. This laser system has been field tested and demonstrated in numerous materials processing applications in both the IR and green, including scribing and marking. We discuss recent results that demonstrate success in processing a diverse array of representative industrial samples.

High brightness diode laser module development at nLIGHT Photonics

We report on the development of ultra-high brightness laser diode modules at nLIGHT Photonics. This paper demonstrates a laser diode module capable of coupling over 100W at 976 nm into a 105 μm, 0.15 NA fiber with fiber coupling efficiency greater than 85%. The high brightness module has an optical excitation under 0.13 NA, is virtually free of cladding modes, and has been wavelength stabilized with the use of volume holographic gratings for narrow-band operation. Utilizing nLIGHTs Pearl product architecture, these modules are based on hard soldered single emitters packaged into a compact and passively-cooled package. These modules are designed to be compatible with high power 7:1 fused fiber combiners, enabling over 500W power coupled into a 220 μm, 0.22 NA fiber. These modules address the need in the market for high brightness and wavelength stabilized diode lasers for pumping fiber lasers and solid-state laser systems.