James H. Morris

High-conversion-efficiency tin material laser-plasma source for EUVL

One of the key leverage factors in determining the viability of laser-plasma sources for EUVL is the conversion efficiency of laser light to EUV emission in the 13-nm region. We describe experiments and theoretical calculations on a mass-limited laser target design using tin that offers high conversion efficiency.

High-power laser-plasma x-ray source for lithography

A compact x-ray source radiates 24 Watts average power of 1nm x-rays in 2 (pi) steradians. The laser produced plasma x-ray source has a 300 W laser driver which is a compact, diode-pumped solid-state Nd:YAG laser system. The x-ray conversion efficiency is 9 percent of the laser power delivered on target. The x-ray source was used to demonstrate x-ray lithography of 75 nm lines. The x-ray source is optimized for integration with a x-ray stepper to provide a complete x-ray lithography exposure tool for the manufacture of high-speed GaAs devices.

High-Power Compact Laser-Plasma Source for X-ray Lithography

A compact laser-produced plasma X-ray source that radiates 1 nm X-rays with an average power of 24 W in 2π steradians is presented. The X-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The X-ray source was used to demonstrate X-ray lithography of 75 nm lines. The X-ray source is optimized for integration with an X-ray stepper to provide a complete X-ray lithography exposure tool for the manufacture of high-speed GaAs devices.

X-ray Spectral Measurements of the JMAR High-Power Laser-plasmaSource

X-ray spectra of Cu plasmas at the focus of a four-beam, solid-state diode-pumped laser have been recorded. This laser-plasma X-ray source is being developed for JMARs lithography systems aimed at high- performance semiconductor integrated circuits. The unique simultaneous overlay of the four sub-nanosecond laser beams at 300 Hertz produces a bright, point-plasma X-ray source. PIN diode measurements of the X-ray output indicate that the conversion efficiency (ratio of X-ray emission energy into 2π steradians to incident laser energy) was approximately 9 percent with average X-ray power yields of greater than 10 Watts. Spectra were recorded on calibrated Kodak DEF film in a curved-crystal spectrograph. A KAP crystal (2d = 26.6 Angstroms) was used to disperse the 900 eV to 3000 eV spectral energies onto the film. Preliminary examination of the films indicated the existence of Cu and Cu XX ionization states. Additional spectra as a function of laser input power were also recorded to investigate potential changes in X-ray yields. These films are currently being analyzed. The analysis of the spectra provide absolute line and continuum intensities, and total X-ray output in the measured spectral range.

Compact high power laser-plasma X-ray source for lithography

Summary form only given. A compact laser produced plasma X-ray source generates 24 Watts average power of 1.1 nm X-rays in 2/spl pi/ steradians. The laser-plasma source is driven by a compact, diode-pumped, solid-state 300 Watt Nd:YAG laser system.

Compact high-power laser-plasma x-ray source for lithography

A compact laser produced plasma x-ray source radiates 24 Watts average power of 1nm x-rays in 2(pi) steradians. The x-ray power conversion efficiency is 9% from the laser average power focused on the x-ray target. The laser-plasma x-ray source is generated by a 300W compact, diode-pumped, solid-state Nd:YAG laser system. The tabletop laser system is constructed on a 4ft x 8ft optical bench and the laser modules are 1ft high. The total wall-plug power consumption for this laser-produced-plasma x-ray source is 22 kW. The x-ray source is optimized for integration with and x-ray stepper to provide a complete x-ray lithography exposure tool for the manufacture of high speed GaAs devices.