Jamie H. Warner

Superparamagnetic Fe3O4 nanocrystals@graphene composites for energy storage devices

In this paper, a Fe3O4 nanocrystals@graphene composite (FGC) was synthesized via a chemical deposition method by using graphene oxide as a precursor. We also investigate the structures, physicochemical properties and applications of FGCs, involving superparamagnetic performance, and use as supercapacitors and lithium ion battery (LIBs). The results showed that the Fe3O4 NCs were formed and incorporated onto the surface of the graphene sheets. The composite material FGC with a micrometre scale structure possessed similar size as the graphene sheets and exhibited superparamagnetic behavior at room temperature. The supercapacitance values of the FGC composites were enlarged compared with those of the graphene sheets or Fe3O4 NCs, which is attributed to the interaction between the Fe3O4 NCs and the graphene sheets. Meanwhile, a superior rechargeable stability of FGCs used as an anode material in LIBs can be observed.

Direct low-temperature nanographene CVD synthesis over a dielectric insulator

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.

Hexagonal single crystal domains of few-layer graphene on copper foils.

Hexagonal-shaped single crystal domains of few layer graphene (FLG) are synthesized on copper foils using atmospheric pressure chemical vapor deposition with a high methane flow. Scanning electron microscopy reveals that the graphene domains have a hexagonal shape and are randomly orientated on the copper foil. However, the sites of graphene nucleation exhibit some correlation by forming linear rows. Transmission electron microscopy is used to examine the folded edges of individual domains and reveals they are few-layer graphene consisting of approximately 5-10 layers in the central region and thinning out toward the edges of the domain. Selected area electron diffraction of individual isolated domains reveals they are single crystals with AB Bernal stacking and free from the intrinsic rotational stacking faults that are associated with turbostratic graphite. We study the time-dependent growth dynamics of the domains and show that the final continuous FLG film is polycrystalline, consisting of randomly connected single crystal domains.

Atomic resolution imaging and topography of boron nitride sheets produced by chemical exfoliation.

Here, we present a simple method for preparing thin few-layer sheets of hexagonal BN with micrometer-sized dimensions using chemical exfoliation in the solvent 1,2-dichloroethane. The atomic structure of both few-layer and monolayer BN sheets is directly imaged using aberration-corrected high-resolution transmission electron microscopy. Electron beam induced sputtering effects are examined in real time. The removal of layers of BN by electron beam irradiation leads to the exposure of a step edge between a monolayer and bilayer region. We use HRTEM imaging combined with image simulations to show that BN bilayers can have AB stacking and are not limited to just AA stacking.

Dislocation-Driven Deformations in Graphene

Moving Dislocations The mechanical properties of crystalline materials are limited by the presence and motion of defects caused by extra or missing atoms in the crystal lattice. Plastic deformation of a material causes these defects, known as dislocations, to move and multiply. Much is known about the motion of dislocations in three dimensions but less so in two. Warner et al. (p. 209; see the Perspective by Bonilla and Carpio) used graphene as a model material to track dislocation dynamics in real time. The strain fields in the graphene sheet were mapped, which suggests that the dislocation motion is connected to the stretching, rotating, and breaking of individual carbon bonds. Two-dimensional dislocation dynamics and the resulting strain fields are studied at high resolution in graphene. The movement of dislocations in a crystal is the key mechanism for plastic deformation in all materials. Studies of dislocations have focused on three-dimensional materials, and there is little experimental evidence regarding the dynamics of dislocations and their impact at the atomic level on the lattice structure of graphene. We studied the dynamics of dislocation pairs in graphene, recorded with single-atom sensitivity. We examined stepwise dislocation movement along the zig-zag lattice direction mediated either by a single bond rotation or through the loss of two carbon atoms. The strain fields were determined, showing how dislocations deform graphene by elongation and compression of C-C bonds, shear, and lattice rotations.

Large Single Crystals of Graphene on Melted Copper Using Chemical Vapor Deposition

Summary form only given. A simple one-step method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapour deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 °C) and using a molybdenum support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 μm are produced, determined by electron diffraction mapping. Angular resolved photoemission spectroscopy is used to show the graphene grown on copper exhibits a linear dispersion relationship and has no sign of doping.

Spatial control of defect creation in graphene at the nanoscale

Defects in graphene alter its electrical, chemical, magnetic and mechanical properties. The intentional creation of defects in graphene offers a means for engineering its properties. Techniques such as ion irradiation intentionally induce atomic defects in graphene, for example, divacancies, but these defects are randomly scattered over large distances. Control of defect formation with nanoscale precision remains a significant challenge. Here we show control over both the location and average complexity of defect formation in graphene by tailoring its exposure to a focussed electron beam. Divacancies and larger disordered structures are produced within a 10 × 10 nm(2) region of graphene and imaged after creation using an aberration-corrected transmission electron microscope. Some of the created defects were stable, whereas others relaxed to simpler structures through bond rotations and surface adatom incorporation. These results are important for the utilization of atomic defects in graphene-based research.

Structural transformations in graphene studied with high spatial and temporal resolution.

Graphene has remarkable electronic properties, such as ballistic transport and quantum Hall effects, and has also been used as a support for samples in high-resolution transmission electron microscopy and as a transparent electrode in photovoltaic devices. There is now a demand for techniques that can manipulate the structural and physical properties of graphene, in conjunction with the facility to monitor the changes in situ with atomic precision. Here, we show that irradiation with an 80 kV electron beam can selectively remove monolayers in few-layer graphene sheets by means of electron-beam-induced sputtering. Aberration-corrected, low-voltage, high-resolution transmission electron microscopy with sub-ångström resolution is used to examine the structural reconstruction occurring at the single atomic level. We find preferential termination for graphene layers along the zigzag orientation for large hole sizes. The temporal resolution can also be reduced to 80 ms, enabling real-time observation of the reconstruction of carbon atoms during the sputtering process. We also report electron-beam-induced rapid displacement of monolayers, fast elastic distortions and flexible bending at the edges of graphene sheets. These results reveal how energy transfer from the electron beam to few-layer graphene sheets leads to unique structural transformations.

Direct imaging of rotational stacking faults in few layer graphene.

Few layer graphene nanostructures are directly imaged using aberration corrected high-resolution transmission electron microscopy with an electron accelerating voltage of 80 kV. We observe rotational stacking faults in the HRTEM images of 2-6 layers of graphene sheets, giving rise to Moir patterns. By filtering in the frequency domain using a Fourier transform, we reconstruct the graphene lattice of each sheet and determine the packing structure and relative orientations of up to six separate sets. Direct evidence is obtained for few layer graphene sheets with packing that is different to the standard AB Bernal packing of bulk graphite. This has implications toward bilayer and few layer graphene electronic devices and the determination of their intrinsic structure.

Growth of Ultrahigh Density Single-Walled Carbon Nanotube Forests by Improved Catalyst Design

We have grown vertically aligned single-walled carbon nanotube forests with an area density of 1.5 × 10(13) cm(-2), the highest yet achieved, by reducing the average diameter of the nanotubes. We use a nanolaminate Fe-Al(2)O(3) catalyst design consisting of three layers of Al(2)O(3), Fe, and Al(2)O(3), in which the lower Al(2)O(3) layer is densified by an oxygen plasma treatment to increase its diffusion barrier properties, to allow a thinner catalyst layer to be used. This high nanotube density is desirable for using carbon nanotubes as interconnects in integrated circuits.