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Featured researches published by Kuang He.


ACS Nano | 2012

Large Single Crystals of Graphene on Melted Copper Using Chemical Vapor Deposition

Yimin A. Wu; Ye Fan; Susannah Speller; Graham Creeth; Jerzy T. Sadowski; Kuang He; Alex W. Robertson; Christopher S. Allen; Jamie H. Warner

Summary form only given. A simple one-step method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapour deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 °C) and using a molybdenum support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 μm are produced, determined by electron diffraction mapping. Angular resolved photoemission spectroscopy is used to show the graphene grown on copper exhibits a linear dispersion relationship and has no sign of doping.


Nature Communications | 2012

Spatial control of defect creation in graphene at the nanoscale

Alex W. Robertson; Christopher S. Allen; Yimin A. Wu; Kuang He; Jaco Olivier; J.H. Neethling; Angus I. Kirkland; Jamie H. Warner

Defects in graphene alter its electrical, chemical, magnetic and mechanical properties. The intentional creation of defects in graphene offers a means for engineering its properties. Techniques such as ion irradiation intentionally induce atomic defects in graphene, for example, divacancies, but these defects are randomly scattered over large distances. Control of defect formation with nanoscale precision remains a significant challenge. Here we show control over both the location and average complexity of defect formation in graphene by tailoring its exposure to a focussed electron beam. Divacancies and larger disordered structures are produced within a 10 × 10 nm(2) region of graphene and imaged after creation using an aberration-corrected transmission electron microscope. Some of the created defects were stable, whereas others relaxed to simpler structures through bond rotations and surface adatom incorporation. These results are important for the utilization of atomic defects in graphene-based research.


Nano Letters | 2013

Dynamics of single Fe atoms in graphene vacancies.

Alex W. Robertson; B. Montanari; Kuang He; Judy S. Kim; Christopher S. Allen; Yimin A. Wu; Jaco Olivier; J.H. Neethling; N. M. Harrison; Angus I. Kirkland; Jamie H. Warner

Focused electron beam irradiation has been used to create mono and divacancies in graphene within a defined area, which then act as trap sites for mobile Fe atoms initially resident on the graphene surface. Aberration-corrected transmission electron microscopy at 80 kV has been used to study the real time dynamics of Fe atoms filling the vacancy sites in graphene with atomic resolution. We find that the incorporation of a dopant atom results in pronounced displacements of the surrounding carbon atoms of up to 0.5 Å, which is in good agreement with density functional theory calculations. Once incorporated into the graphene lattice, Fe atoms can transition to adjacent lattice positions and reversibly switch their bonding between four and three nearest neighbors. The C atoms adjacent to the Fe atoms are found to be more susceptible to Stone-Wales type bond rotations with these bond rotations associated with changes in the dopant bonding configuration. These results demonstrate the use of controlled electron beam irradiation to incorporate dopants into the graphene lattice with nanoscale spatial control.


Nano Letters | 2014

Atomic Structure and Dynamics of Metal Dopant Pairs in Graphene

Zhengyu He; Kuang He; Alex W. Robertson; Angus I. Kirkland; Dong-Wook Kim; Jisoon Ihm; Euijoon Yoon; Gun-Do Lee; Jamie H. Warner

We present an atomic resolution structural study of covalently bonded dopant pairs in the lattice of monolayer graphene. Two iron (Fe) metal atoms that are covalently bonded within the graphene lattice are observed and their interaction with each other is investigated. The two metal atom dopants can form small paired clusters of varied geometry within graphene vacancy defects. The two Fe atoms are created within a 10 nm diameter predefined location in graphene by manipulating a focused electron beam (80 kV) on the surface of graphene containing an intentionally deposited Fe precursor reservoir. Aberration-corrected transmission electron microscopy at 80 kV has been used to investigate the atomic structure and real time dynamics of Fe dimers embedded in graphene vacancies. Four different stable structures have been observed; two variants of an Fe dimer in a graphene trivacancy, an Fe dimer embedded in two adjacent monovacancies and an Fe dimer trapped by a quadvacancy. According to spin-sensitive DFT calculations, these dimer structures all possess magnetic moments of either 2.00 or 4.00 μB. The dimer structures were found to evolve from an initial single Fe atom dopant trapped in a graphene vacancy.


ACS Nano | 2013

Structural Reconstruction of the Graphene Monovacancy

Alex W. Robertson; B. Montanari; Kuang He; Christopher S. Allen; Yimin A. Wu; N. M. Harrison; Angus I. Kirkland; Jamie H. Warner

Two distinct configurations of the monovacancy in graphene have been observed using aberration-corrected transmission electron microscopy (AC-TEM) at 80 kV. The predicted lower energy asymmetric monovacancy (MV), exhibiting a Jahn-Teller reconstruction (r-MV), has been observed, but in addition, we have imaged instances of a symmetric monovacancy (s-MV). We have used geometric phase analysis (GPA) to quantitatively determine the strain in the lattice surrounding these two defect configurations and show that the Jahn-Teller reconstruction generates significant extra strain compared to the symmetric MV case. Density functional theory calculations demonstrate that our experimental images of the two different monovacancies show good agreement with both the low energy r-MV and the metastable structures.


ACS Nano | 2015

Controlled preferential oxidation of grain boundaries in monolayer tungsten disulfide for direct optical imaging.

Youmin Rong; Kuang He; Mercè Pacios; Alex W. Robertson; Harish Bhaskaran; Jamie H. Warner

Synthetic 2D crystal films grown by chemical vapor deposition are typically polycrystalline, and determining grain size within domains and continuous films is crucial for determining their structure. Here we show that grain boundaries in the 2D transition metal dichalcogenide WS2, grown by CVD, can be preferentially oxidized by controlled heating in air. Under our developed conditions, preferential degradation at the grain boundaries causes an increase in their physical size due to oxidation. This increase in size enables their clear and rapid identification using a standard optical microscope. We demonstrate that similar treatments in an Ar environment do no show this effect, confirming that oxidation is the main role in the structural change. Statistical analysis of grain boundary (GB) angles shows dominant mirror formation. Electrical biasing across the GB is shown to lead to changes at the GB and their observation under an optical microscope. Our approach enables high-throughput screening of as-synthesized WS2 domains and continuous films to determine their crystallinity and should enable improvements in future CVD growth of these materials.


Nature Communications | 2014

Hydrogen-free graphene edges

Kuang He; Gun-Do Lee; Alex W. Robertson; Euijoon Yoon; Jamie H. Warner

Graphene edges and their functionalization influence the electronic and magnetic properties of graphene nanoribbons. Theoretical calculations predict saturating graphene edges with hydrogen lower its energy and form a more stable structure. Despite the importance, experimental investigations of whether graphene edges are always hydrogen-terminated are limited. Here we study graphene edges produced by sputtering in vacuum and direct measurements of the C-C bond lengths at the edge show ~86% contraction relative to the bulk. Density functional theory reveals the contraction is attributed to the formation of a triple bond and the absence of hydrogen functionalization. Time-dependent images reveal temporary attachment of a single atom to the arm-chair C-C bond in a triangular configuration, causing expansion of the bond length, which then returns back to the contracted value once the extra atom moves on and the arm-chair edge is returned. Our results provide confirmation that non-functionalized graphene edges can exist in vacuum.


Nano Letters | 2014

Stability and Dynamics of the Tetravacancy in Graphene

Alex W. Robertson; Gun-Do Lee; Kuang He; Euijoon Yoon; Angus I. Kirkland; Jamie H. Warner

The relative prevalence of various configurations of the tetravacancy defect in monolayer graphene has been examined using aberration corrected transmission electron microscopy (TEM). It was found that the two most common structures are extended linear defect structures, with the 3-fold symmetric Y-tetravacancy seldom imaged, in spite of this being a low energy state. Using density functional theory and tight-binding molecular dynamics calculations, we have determined that our TEM observations support a dynamic model of the tetravacancy under electron irradiation, with Stone-Wales bond rotations providing a mechanism for defect relaxation into lowest energy configurations. The most prevalent tetravacancy structures, while not necessarily having the lowest formation energy, are found to have a local energy minimum in the overall energy landscape for tetravacancies, explaining their relatively high occurrence.


ACS Nano | 2015

Temperature Dependence of the Reconstruction of Zigzag Edges in Graphene

Kuang He; Alex W. Robertson; Ye Fan; Christopher S. Allen; Yung-Chang Lin; Kazu Suenaga; Angus I. Kirkland; Jamie H. Warner

We examine the temperature dependence of graphene edge terminations at the atomic scale using an in situ heating holder within an aberration-corrected transmission electron microscope. The relative ratios of armchair, zigzag, and reconstructed zigzag edges from over 350 frames at each temperature are measured. Below 400 °C, the edges are dominated by zigzag terminations, but above 600 °C, this changes dramatically, with edges dominated by armchair and reconstructed zigzag edges. We show that at low temperature chemical etching effects dominate and cause deviation to the thermodynamics of the system. At high temperatures (600 and 800 °C), adsorbates are evaporated from the surface of graphene and chemical etching effects are significantly reduced, enabling the thermodynamic distribution of edge types to be observed. The growth rate of holes at high temperature is also shown to be slower than at room temperature, indicative of the reduced chemical etching process. These results provide important insights into the role of chemical etching effects in the hole formation, edge sputtering, and edge reconstruction in graphene.


ACS Nano | 2013

Bond length and charge density variations within extended arm chair defects in graphene.

Jamie H. Warner; Gun-Do Lee; Kuang He; Alex W. Robertson; Euijoon Yoon; Angus I. Kirkland

Extended linear arm chair defects are intentionally fabricated in suspended monolayer graphene using controlled focused electron beam irradiation. The atomic structure is accurately determined using aberration-corrected transmission electron microscopy with monochromation of the electron source to achieve ∼80 pm spatial resolution at an accelerating voltage of 80 kV. We show that the introduction of atomic vacancies in graphene disrupts the uniformity of C-C bond lengths immediately surrounding linear arm chair defects in graphene. The measured changes in C-C bond lengths are related to density functional theory (DFT) calculations of charge density variation and corresponding DFT calculated structural models. We show good correlation between the DFT predicted localized charge depletion and structural models with HRTEM measured bond elongation within the carbon tetragon structure of graphene. Further evidence of bond elongation within graphene defects is obtained from imaging a pair of 5-8-5 divacancies.

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Euijoon Yoon

Seoul National University

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Gun-Do Lee

Seoul National University

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Qu Chen

University of Oxford

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Ye Fan

University of Oxford

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