Alex W. Robertson

Hexagonal single crystal domains of few-layer graphene on copper foils.

Hexagonal-shaped single crystal domains of few layer graphene (FLG) are synthesized on copper foils using atmospheric pressure chemical vapor deposition with a high methane flow. Scanning electron microscopy reveals that the graphene domains have a hexagonal shape and are randomly orientated on the copper foil. However, the sites of graphene nucleation exhibit some correlation by forming linear rows. Transmission electron microscopy is used to examine the folded edges of individual domains and reveals they are few-layer graphene consisting of approximately 5-10 layers in the central region and thinning out toward the edges of the domain. Selected area electron diffraction of individual isolated domains reveals they are single crystals with AB Bernal stacking and free from the intrinsic rotational stacking faults that are associated with turbostratic graphite. We study the time-dependent growth dynamics of the domains and show that the final continuous FLG film is polycrystalline, consisting of randomly connected single crystal domains.

Dislocation-Driven Deformations in Graphene

Moving Dislocations The mechanical properties of crystalline materials are limited by the presence and motion of defects caused by extra or missing atoms in the crystal lattice. Plastic deformation of a material causes these defects, known as dislocations, to move and multiply. Much is known about the motion of dislocations in three dimensions but less so in two. Warner et al. (p. 209; see the Perspective by Bonilla and Carpio) used graphene as a model material to track dislocation dynamics in real time. The strain fields in the graphene sheet were mapped, which suggests that the dislocation motion is connected to the stretching, rotating, and breaking of individual carbon bonds. Two-dimensional dislocation dynamics and the resulting strain fields are studied at high resolution in graphene. The movement of dislocations in a crystal is the key mechanism for plastic deformation in all materials. Studies of dislocations have focused on three-dimensional materials, and there is little experimental evidence regarding the dynamics of dislocations and their impact at the atomic level on the lattice structure of graphene. We studied the dynamics of dislocation pairs in graphene, recorded with single-atom sensitivity. We examined stepwise dislocation movement along the zig-zag lattice direction mediated either by a single bond rotation or through the loss of two carbon atoms. The strain fields were determined, showing how dislocations deform graphene by elongation and compression of C-C bonds, shear, and lattice rotations.

Large Single Crystals of Graphene on Melted Copper Using Chemical Vapor Deposition

Summary form only given. A simple one-step method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapour deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 °C) and using a molybdenum support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 μm are produced, determined by electron diffraction mapping. Angular resolved photoemission spectroscopy is used to show the graphene grown on copper exhibits a linear dispersion relationship and has no sign of doping.

Spatial control of defect creation in graphene at the nanoscale

Defects in graphene alter its electrical, chemical, magnetic and mechanical properties. The intentional creation of defects in graphene offers a means for engineering its properties. Techniques such as ion irradiation intentionally induce atomic defects in graphene, for example, divacancies, but these defects are randomly scattered over large distances. Control of defect formation with nanoscale precision remains a significant challenge. Here we show control over both the location and average complexity of defect formation in graphene by tailoring its exposure to a focussed electron beam. Divacancies and larger disordered structures are produced within a 10 × 10 nm(2) region of graphene and imaged after creation using an aberration-corrected transmission electron microscope. Some of the created defects were stable, whereas others relaxed to simpler structures through bond rotations and surface adatom incorporation. These results are important for the utilization of atomic defects in graphene-based research.

Growth of Ultrahigh Density Single-Walled Carbon Nanotube Forests by Improved Catalyst Design

We have grown vertically aligned single-walled carbon nanotube forests with an area density of 1.5 × 10(13) cm(-2), the highest yet achieved, by reducing the average diameter of the nanotubes. We use a nanolaminate Fe-Al(2)O(3) catalyst design consisting of three layers of Al(2)O(3), Fe, and Al(2)O(3), in which the lower Al(2)O(3) layer is densified by an oxygen plasma treatment to increase its diffusion barrier properties, to allow a thinner catalyst layer to be used. This high nanotube density is desirable for using carbon nanotubes as interconnects in integrated circuits.

Dynamics of single Fe atoms in graphene vacancies.

Focused electron beam irradiation has been used to create mono and divacancies in graphene within a defined area, which then act as trap sites for mobile Fe atoms initially resident on the graphene surface. Aberration-corrected transmission electron microscopy at 80 kV has been used to study the real time dynamics of Fe atoms filling the vacancy sites in graphene with atomic resolution. We find that the incorporation of a dopant atom results in pronounced displacements of the surrounding carbon atoms of up to 0.5 Å, which is in good agreement with density functional theory calculations. Once incorporated into the graphene lattice, Fe atoms can transition to adjacent lattice positions and reversibly switch their bonding between four and three nearest neighbors. The C atoms adjacent to the Fe atoms are found to be more susceptible to Stone-Wales type bond rotations with these bond rotations associated with changes in the dopant bonding configuration. These results demonstrate the use of controlled electron beam irradiation to incorporate dopants into the graphene lattice with nanoscale spatial control.

Atomic Structure and Dynamics of Metal Dopant Pairs in Graphene

We present an atomic resolution structural study of covalently bonded dopant pairs in the lattice of monolayer graphene. Two iron (Fe) metal atoms that are covalently bonded within the graphene lattice are observed and their interaction with each other is investigated. The two metal atom dopants can form small paired clusters of varied geometry within graphene vacancy defects. The two Fe atoms are created within a 10 nm diameter predefined location in graphene by manipulating a focused electron beam (80 kV) on the surface of graphene containing an intentionally deposited Fe precursor reservoir. Aberration-corrected transmission electron microscopy at 80 kV has been used to investigate the atomic structure and real time dynamics of Fe dimers embedded in graphene vacancies. Four different stable structures have been observed; two variants of an Fe dimer in a graphene trivacancy, an Fe dimer embedded in two adjacent monovacancies and an Fe dimer trapped by a quadvacancy. According to spin-sensitive DFT calculations, these dimer structures all possess magnetic moments of either 2.00 or 4.00 μB. The dimer structures were found to evolve from an initial single Fe atom dopant trapped in a graphene vacancy.

Structural Reconstruction of the Graphene Monovacancy

Two distinct configurations of the monovacancy in graphene have been observed using aberration-corrected transmission electron microscopy (AC-TEM) at 80 kV. The predicted lower energy asymmetric monovacancy (MV), exhibiting a Jahn-Teller reconstruction (r-MV), has been observed, but in addition, we have imaged instances of a symmetric monovacancy (s-MV). We have used geometric phase analysis (GPA) to quantitatively determine the strain in the lattice surrounding these two defect configurations and show that the Jahn-Teller reconstruction generates significant extra strain compared to the symmetric MV case. Density functional theory calculations demonstrate that our experimental images of the two different monovacancies show good agreement with both the low energy r-MV and the metastable structures.

Atomic Structure of Interconnected Few-Layer Graphene Domains

The atomic structure at the boundary interface between interconnected few-layer graphene (FLG) domains, synthesized by atmospheric pressure chemical vapor deposition (AP-CVD), is examined using aberration-corrected high-resolution transmission electron microscopy. Moiré patterns in the HRTEM images reveal the presence of rotational stacking faults in the boundary region that extend over distances of ∼100 nm. We show that FLG domains interconnect via two principle processes: graphene sheets from one domain grow over the top of a neighboring domain, while other graphene domains interconnect by direct atomic bonding. Differentiating between these two types of interconnects was found to be possible by examining the HRTEM contrast profiles produced at the interface. Graphene sheets that terminate were found to produce strong edge contrast with increasing defocus values, as well as a broader edge cross section, whereas atomically bonded interfaces were found to not exhibit any contrast, even under large defocus values. These findings are reinforced by correlating with multi-slice TEM image simulations of appropriate structures.

MoS2 monolayer catalyst doped with isolated Co atoms for the hydrodeoxygenation reaction

The conversion of oxygen-rich biomass into hydrocarbon fuels requires efficient hydrodeoxygenation catalysts during the upgrading process. However, traditionally prepared CoMoS2 catalysts, although efficient for hydrodesulfurization, are not appropriate due to their poor activity, sulfur loss and rapid deactivation at elevated temperature. Here, we report the synthesis of MoS2 monolayer sheets decorated with isolated Co atoms that bond covalently to sulfur vacancies on the basal planes that, when compared with conventionally prepared samples, exhibit superior activity, selectivity and stability for the hydrodeoxygenation of 4-methylphenol to toluene. This higher activity allows the reaction temperature to be reduced from the typically used 300 °C to 180 °C and thus allows the catalysis to proceed without sulfur loss and deactivation. Experimental analysis and density functional theory calculations reveal a large number of sites at the interface between the Co and Mo atoms on the MoS2 basal surface and we ascribe the higher activity to the presence of sulfur vacancies that are created local to the observed Co-S-Mo interfacial sites.