Janghyun Jo

Variable‐Color Light‐Emitting Diodes Using GaN Microdonut arrays

Microdonut-shaped GaN/Inx Ga1-x N light-emitting diode (LED) microarrays are fabricated for variable-color emitters. The figure shows clearly donut-shaped light emission from all the individual microdonut LEDs. Furthermore, microdonut LEDs exhibit spatially-resolved blue and green EL colors, which can be tuned by either controlling the external bias voltage or changing the size of the microdonut LED.

Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.

Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters-including set voltage, reset voltage, and resistance-in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film. To achieve this result, we deposited an SrFeOx/SrRuO3 heteroepitaxial structure onto an SrTiO3 (001) substrate by pulsed laser deposition, and then we deposited an Au top electrode by electron-beam evaporation. This device exhibited excellent bipolar resistance switching characteristics, including a high on/off ratio, narrow distribution of key switching parameters, and long data retention time. We interpret these phenomena in terms of a local, reversible phase transformation in the SrFeOx film between brownmillerite and perovskite structures. Using the brownmillerite structure and atomically uniform thickness of the heteroepitaxial SrFeOx thin film, we overcame two major hurdles in the development of resistive random-access memory devices: high forming voltage and broad distributions of switching parameters.

High‐Resolution Observation of Nucleation and Growth Behavior of Nanomaterials Using a Graphene Template

By using graphene as an electron beam-transparent substrate for both nanomaterial growth and transmission electron microscopy (TEM) measurements, we investigate initial growth behavior of nanomaterials. The direct growth and imaging method using graphene facilitate atomic-resolution imaging of nanomaterials at the very early stage of growth. This enables the observation of the transition in crystal structure of ZnO nuclei and the formation of various defects during nanomaterial growth.

Growth and optical characteristics of high-quality ZnO thin films on graphene layers

We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

Microtube Light-Emitting Diode Arrays with Metal Cores

We report the fabrication and characteristics of vertical microtube light-emitting diode (LED) arrays with a metal core inside the devices. To make the LEDs, gallium nitride (GaN)/indium gallium nitride (In(x)Ga(1-x)N)/zinc oxide (ZnO) coaxial microtube LED arrays were grown on an n-GaN/c-aluminum oxide (Al2O3) substrate. The microtube LED arrays were then lifted-off the substrate by wet chemical etching of the sacrificial ZnO microtubes and the silicon dioxide (SiO2) layer. The chemically lifted-off LED layer was then transferred upside-down on other supporting substrates. To create the metal cores, titanium/gold and indium tin oxide were deposited on the inner shells of the microtubes, forming n-type electrodes inside the metal-cored LEDs. The characteristics of the resulting devices were determined by measuring electroluminescence and current-voltage characteristic curves. To gain insights into the current-spreading characteristics of the devices and understand how to make them more efficient, we modeled them computationally.

Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride

We report the molecular beam epitaxial growth and characterization of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride (h-BN). A two-step growth was developed, enhancing both the surface coverage and crystallinity of the films on h-BN. High-resolution transmission electron microscopy study showed an atomically abrupt and epitaxial interface formation between the h-BN substrate and Bi2Se3. We performed gate tuned magnetotransport characterizations of the device fabricated on the thin film and confirmed a high mobility surface state at the Bi2Se3/h-BN interface. The Berry phase obtained from Shubnikov−de Haas oscillations suggested this interfacial electronic state is a topologically protected Dirac state.

Real-Time Characterization Using in situ RHEED Transmission Mode and TEM for Investigation of the Growth Behaviour of Nanomaterials

A novel characterization technique using both in situ reflection high-energy electron diffraction (RHEED) transmission mode and transmission electron microscopy (TEM) has been developed to investigate the growth behaviour of semiconductor nanostructures. RHEED employed in transmission mode enables the acquisition of structural information during the growth of nanostructures such as nanorods. Such real-time observation allows the investigation of growth mechanisms of various nanomaterials that is not possible with conventional ex situ analytical methods. Additionally, real-time monitoring by RHEED transmission mode offers a complete range of information when coupled with TEM, providing structural and chemical information with excellent spatial resolution, leading to a better understanding of the growth behaviour of nanomaterials. Here, as a representative study using the combined technique, the nucleation and crystallization of InAs nanorods and the epitaxial growth of InxGa1−xAs(GaAs) shell layers on InAs nanorods are explored. The structural changes in the InAs nanorods at the early growth stage caused by the transition of the local growth conditions and the strain relaxation processes that occur during epitaxial coating of the shell layers are shown. This technique advances our understanding of the growth behaviour of various nanomaterials, which allows the realization of nanostructures with novel properties and their application in future electronics and optoelectronics.

Tris(2-benzimidazolylmethyl)amine-Directed Synthesis of Single-Atom Nickel Catalysts for Electrochemical CO Production from CO2

The electrochemical reduction of carbon dioxide (CO2 ) to value-added products is a promising approach to reducing excess CO2 in the atmosphere. However, the development of electrocatalysts for highly selective and efficient electrochemical CO2 reduction has been challenging because protons are usually easier to reduce than CO2 in an aqueous electrolyte. Recently, single-atom catalysts (SACs) have been suggested as candidate CO2 reduction catalysts due to their unique catalytic properties. To prepare single-atom metal active sites, the stabilization of metal atoms over conductive supports such as graphene sheets to prevent metal aggregation is crucial. To address this issue, a facile method was developed to prepare single-atom nickel active sites on reduced graphene oxide (RGO) sheets for the selective production of carbon monoxide (CO) from CO2 . The tris(2-benzimidazolylmethyl)amine (NTB) ligand was introduced as a linker that can homogeneously disperse nickel atoms on the graphene oxide (GO) sheets. Because the NTB ligands form strong interactions with the GO sheets by π-π interactions and with nickel ions by ligation, they can effectively stabilize nickel ions on GO sheets by forming Ni(NTB)-GO complexes. High-temperature annealing of Ni(NTB)-GO under inert atmosphere produces nickel- and nitrogen-doped reduced graphene oxide sheets (Ni-N-RGO) with single-atom Ni-N4 active sites. Ni-N-RGO shows high CO2 reduction selectivity in the reduction of CO2 to CO with 97 % faradaic efficiency at -0.8 V vs. RHE (reversible hydrogen electrode).

InAs nanorods/graphene layers/ZnO nanorods heterostructures for broadband solar cell applications

We report the growth of InAs and ZnO nanorods vertically on each surface of graphene layers and our investigation of the electrical characteristics.