Jared Hornberger

A Fully Integrated 300°C, 4 kW, 3-Phase, SiC Motor Drive Module

The researchers have designed, developed, packaged, and manufactured a complete multichip power module (MCPM) that integrates silicon carbide (SiC) power transistors with silicon on insulator (SOI) control electronics. The SiC MCPM approach targets the reduction of size and the increase in efficiency of power electronic systems resulting in a highly miniaturized, high power density module. The researchers previously presented a single phase 3 kW SiC inverter that was also proven operational to 250degC at 500 W. In this paper APEI, Inc. will present a new SiC three-phase inverter that has been fully tested to 4 kW at 300degC operation. In this paper, the researchers discuss the challenges associated with high-temperature operation of power electronics, including the electrical, mechanical, and thermal design. Many electronic packaging problems have been solved to enable high-temperature operation of these modules. These packaging issues will be discussed as well as remaining problems that still need advancing. Finally, the full temperature and full power (300degC at 4 kW) test results are presented.

A High-Temperature Multichip Power Module (MCPM) Inverter utilizing Silicon Carbide (SiC) and Silicon on Insulator (SOI) Electronics

The researchers at Arkansas Power Electronics International, Inc. have designed, developed, packaged, and manufactured the first complete multichip power module (MCPM) integrating SiC power transistors with silicon on insulator (SOI) control electronics. The MCPM is a 4 kW three-phase inverter that operates at temperatures in excess of 250 °C. Bare die HTMOS SOI control components have been integrated with bare die SiC power JFETs into a single compact module. The high-temperature operation of SiC switches allows for increased power density over silicon electronics by an order of magnitude, leading to highly miniaturized power converters. In this paper, the researchers will discuss the challenges associated with high-temperature operation of power electronics; present the electrical, mechanical, and thermal design of a high-temperature MCPM; discuss the multitude of packaging issues that were solved to reach high-temperature operation; illustrate the high power density and miniaturization achieved by the SiC MCPM; and present the experimental test results of the fully operational 4 kW SiC MCPM.

High Temperature SiC Power Module Packaging

Wide band gap semiconductors such as silicon carbide (SiC) provide the potential for significant advantages over traditional silicon alternatives including operation at high temperatures for extreme environments and applications, higher voltages reducing the number of devices required for high power applications, and higher switching frequencies to reduce the size of passive elements in the circuit and system. All of these attributes contribute to increased power density at the device and system levels, but the ability to exploit these properties requires complementary high temperature packaging techniques and materials to connect these semiconductors to the system around them. With increasing temperature, the balance of thermal, mechanical, and electrical properties for these packaging materials becomes critical to ensure low thermal impedance, high reliability, and minimal electrical losses. A primary requirement for module operation at high temperatures is a suitable high temperature attachment technology at both the device and module levels. This paper presents a transient liquid phase (TLP) attachment method implemented to provide lead-free bonding for a SiC half-bridge power module. This module was designed for continuous operation above 250 °C for use as a building block for multiple system level applications including hybrid electric vehicles, distributed energy resources, and multilevel converters. A silver-based TLP system was used to accommodate the device and substrate bond with a single TLP system compatible with the device metallurgy. A SiC power module was built using this system and electrically tested at a 250 °C continuous junction temperature. The TLP bonding process was demonstrated for multiple devices in parallel and large substrate bonding surfaces with traditional device and substrate metallization and no requirements for surface planarization or treatment. The results are presented in the paper.Copyright

Design and Fabrication of a High Temperature (250 °C Baseplate), High Power Density Silicon Carbide (SiC) Multichip Power Module (MCPM) Inverter

A proof-of-concept single-phase silicon carbide (SiC)-based 3 kW inverter multichip power module (MCPM) has been built and tested achieving significant volume reduction (~85% smaller) when compared with similar state-of-the-art Si-based single-phase inverter modules. The SiC-based MCPM was tested from room temperature up to baseplate temperature of 250 degC while delivering over 120 Vrms to the load

High Temperature Silicon Carbide Power Modules for High Performance Systems

The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 °C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs.

High-Temperature SOI/SiC-Based DC-DC Converter Suite

A complete design strategy (mechanical and electrical) for a 25 W 28 V/5 V dc-dc converter utilizing SiC and SOI electronics is presented. The converter includes a high-temperature SOI-based PWM controller featuring 150 kHz operation, a PID feedback loop, maximum duty cycle limit, complementary or symmetrical outputs, and a bootstrapped high-side gate driver. Several passive technologies were investigated for both control and power sections. Capacitor technologies were characterized over temperature and over time at 300, power inductors designed and tested up to 350, and power transformers designed and tested up to 500. Northrop Grumman normally-off SiC JFETs were used as power switches and were characterized up to 250. Efficiency and mass optimization routines were developed with the data gained from the first prototype. The effects of radiation on SiC and SOI electronics are then discussed. The results of the first prototype module are presented, with operation from 25 up to an ambient temperature of 240 .