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Dive into the research topics where Edgar Cilio is active.

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Featured researches published by Edgar Cilio.


power electronics specialists conference | 2007

A Fully Integrated 300°C, 4 kW, 3-Phase, SiC Motor Drive Module

Jared Hornberger; Edgar Cilio; Brice McPherson; Roberto Schupbach; Alexander B. Lostetter

The researchers have designed, developed, packaged, and manufactured a complete multichip power module (MCPM) that integrates silicon carbide (SiC) power transistors with silicon on insulator (SOI) control electronics. The SiC MCPM approach targets the reduction of size and the increase in efficiency of power electronic systems resulting in a highly miniaturized, high power density module. The researchers previously presented a single phase 3 kW SiC inverter that was also proven operational to 250degC at 500 W. In this paper APEI, Inc. will present a new SiC three-phase inverter that has been fully tested to 4 kW at 300degC operation. In this paper, the researchers discuss the challenges associated with high-temperature operation of power electronics, including the electrical, mechanical, and thermal design. Many electronic packaging problems have been solved to enable high-temperature operation of these modules. These packaging issues will be discussed as well as remaining problems that still need advancing. Finally, the full temperature and full power (300degC at 4 kW) test results are presented.


power electronics specialists conference | 2006

A High-Temperature Multichip Power Module (MCPM) Inverter utilizing Silicon Carbide (SiC) and Silicon on Insulator (SOI) Electronics

Jared Hornberger; Edgar Cilio; Roberto Schupbach; Alexander B. Lostetter; H.A. Mantooth

The researchers at Arkansas Power Electronics International, Inc. have designed, developed, packaged, and manufactured the first complete multichip power module (MCPM) integrating SiC power transistors with silicon on insulator (SOI) control electronics. The MCPM is a 4 kW three-phase inverter that operates at temperatures in excess of 250 °C. Bare die HTMOS SOI control components have been integrated with bare die SiC power JFETs into a single compact module. The high-temperature operation of SiC switches allows for increased power density over silicon electronics by an order of magnitude, leading to highly miniaturized power converters. In this paper, the researchers will discuss the challenges associated with high-temperature operation of power electronics; present the electrical, mechanical, and thermal design of a high-temperature MCPM; discuss the multitude of packaging issues that were solved to reach high-temperature operation; illustrate the high power density and miniaturization achieved by the SiC MCPM; and present the experimental test results of the fully operational 4 kW SiC MCPM.


applied power electronics conference | 2007

A Novel High Density 100kW Three-Phase Silicon Carbide (SIC) Multichip Power Module (MCPM) Inverter

Edgar Cilio; Jared Homberger; Brice McPherson; Roberto Schupbach; Alexander B. Lostetter; John Garrett

The complete design strategy (mechanical and electrical) of a three-phase 100 kW power converter utilizing silicon carbide (SiC) and silicon-on-insulator (SOI) electronics is presented. The design philosophy focuses on size reduction through high temperature operation (200+ °C junction temperature). A low power, proof-of-concept prototype operating at 4 kW has been built and tested. The preliminary work renders the 100 kW module 75 % the size of comparable state-of-the art Si converters of the same voltage and power levels. The design approach makes use of the unique advantages of SiC devices while incorporating the necessary passive (capacitive and magnetic) technologies in order to complete a fully functional power module. High power density is obtained through high density integration of the control and power stages using multichip power module (MCPM) technology. The scaling of the low power module to the fully fledged three-phase 100 kW prototype SiC MCPM converter is analyzed in detail.


ieee aerospace conference | 2009

SiC intelligent multi module DC/DC converter system for space applications

Edgar Cilio; Gavin Mitchell; Marcelo Schupbach; Alexander B. Lostetter

Power electronic converters are essential in every mission vehicle, with use in critical systems ranging from electric power management applications, to power distribution, to on-board servo motor/actuator drivers. Power converter systems are restricted by their maximum operating voltage and current (and hence power) levels at both their inputs and outputs. Scalability to a higher voltage, current or power level means a complete redesign of the power converter system—an expensive, time consuming process. Increasing power density and efficiency, reducing size and weight, and introducing standardization of electronics systems are all goals of the aerospace industry. The modular converter concept is an ideal solution to diminish time and expenses associated with the implementation of typical converters. However, true modular operation of DC/DC converters presents a set of inherent power sharing problems derived from their intrinsic topology behavior and closed loop control characteristic. An advanced silicon carbide (SiC) based intelligent multi module DC/DC converter system has been designed, built, and tested.


conference of the industrial electronics society | 2006

Design and Fabrication of a High Temperature (250 °C Baseplate), High Power Density Silicon Carbide (SiC) Multichip Power Module (MCPM) Inverter

Edgar Cilio; Jared Hornberger; Brice McPherson; Roberto Schupbach; Alexander B. Lostetter

A proof-of-concept single-phase silicon carbide (SiC)-based 3 kW inverter multichip power module (MCPM) has been built and tested achieving significant volume reduction (~85% smaller) when compared with similar state-of-the-art Si-based single-phase inverter modules. The SiC-based MCPM was tested from room temperature up to baseplate temperature of 250 degC while delivering over 120 Vrms to the load


applied power electronics conference | 2015

Extending the operational limits of the push-pull converter with SiC devices and an active energy recovery clamp circuit

Bret Whitaker; Daniel Martin; Edgar Cilio

This paper presents a push-pull converter as a promising alternative to more complex and more costly isolated dc-dc converters for cost-sensitive, high-performance applications. The push-pull converter utilizes silicon carbide (SiC) power devices along with an active energy recovery clamp (AERC) circuit to extend the conventional operational limits of the topology. The SiC devices provide higher voltage blocking capability while maintaining low on-resistance as well as low switching energy. The AERC allows for nearly all of the energy stored in the leakage inductance of the transformer to be transferred back to the input capacitors without adding any control complexity to the system. The use of SiC devices along with the AERC allows for the push-pull converter to operate at a higher voltage, higher current, and higher switching frequency while maintaining high efficiency. In this work a prototype is developed to be operated with an input voltage of 400 V, a switching frequency of 200 kHz, and an output power greater than 5 kW. The performance of this prototype is compared to the same push-pull converter using an RCD clamp and significant improvements in efficiency are seen. The push-pull converter with AERC also shows higher efficiency across a wide range of output power conditions when compared to a soft-switching phase-shifted full-bridge (PSFB) converter with similar design specifications. Overall a maximum efficiency of 96.5% was measured at an output power of 3.7 kW for the push-pull converter with AERC.


Materials Science Forum | 2012

High Temperature Silicon Carbide Power Modules for High Performance Systems

Alexander B. Lostetter; Jared Hornberger; Brice McPherson; Jack Bourne; Robert Shaw; Edgar Cilio; W. Cilio; Bradley Reese; E. Heinrichs; Ty McNutt; Marcelo Schupbach

The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 °C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs.


conference of the industrial electronics society | 2008

A reconfigurable fault-tolerant multi module converter system utilizing HTSOI and SiC technology

Gavin Mitchell; Edgar Cilio; Bradley Reese; Roberto Schupbach; Alexander B. Lostetter

High reliability power electronic systems intended for space applications present unique design challenges. Size, cost, and fault tolerance are key forces driving space based designs. A power system architecture capable of addressing these factors is detailed. In particular, the benefits and limitations of high reliability extreme environment components are explored for space systems. A fault tolerant architecture complementing these component technologies is also presented.


Archive | 2009

Low-loss noise-resistant high-temperature gate driver circuits

Jared Hornberger; Brad Reese; Edgar Cilio; Roberto Schupbach; Alex Lostetter; Sharmila Mounce


Power Systems Conference | 2010

High Temperature, High Frequency SiC Three Phase Inverter for Aircraft Applications

Edgar Cilio; Gavin Mitchell; Alex Lostetter; Roberto Schupbach; Brice Mcpherson

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Ty McNutt

University of Arkansas

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