Jason Z. Lin
KLA-Tencor
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Publication
Featured researches published by Jason Z. Lin.
Proceedings of SPIE | 2011
Yu-Hao Huang; Howard Chen; Kyle Shen; H H Chen; Chun Chi Yu; J H Liao; Xiafang Zhang; Russell Teo; Zhi-Qing (James) Xu; Sungchul Yoo; Ching-Hung Bert Lin; Chao-Yu Harvey Cheng; Jason Z. Lin
This paper discusses the scatterometry-based metrology measurement of 28nm high k metal gate after-develop inspection (ADI) and after-etch inspection (AEI) layer structures. For these structures, the critical measurement parameters include side wall angle (SWA) and critical dimension (CD). For production process control of these structures, a metrology tool must utilize a non-destructive measurement technique, and have high sensitivity, precision and throughput. Spectroscopic critical dimension (SCD) metrology tools have been implemented in production for process control of traditional poly gate structures. For todays complex metal gate devices, extended SCD technologies are required. KLA-Tencors new SpectraShape 8810 uses multi-azimuth angles and multi-channel optics to produce the high sensitivity and precision required for measurement of critical parameters on metal gate structures. Data from process of record (POR), focus-exposure matrix (FEM) and design of experiment (DOE) wafers are presented showing the performance of this new SCD tool on metal gate ADI and AEI process structures. Metal gate AEI scatterometry measurement results are also compared to transmission electron microscopy (TEM) reference measurements. These data suggest that the SpectraShape 8810 has the required sensitivity and precision to serve as a production process monitor for 28nm and beyond complex metal gate structures.
advanced semiconductor manufacturing conference | 2012
Yu-Wen Wang; Autumn Yeh; Pao-Chung Lin; Chin-Cheng Chien; Ching-Hung Bert Lin; Zhi-Qing James Xu; Chao-Yu Harvey Cheng; Sungchul Yoo; Jason Z. Lin; Lanny Mihardja; Catherine Perry-Sullivan
Novel process control methodologies are required for SiGe gate recess structures that are used in IC manufacturing to enhance device performance. Metrology measurements of 28nm SiGe after-etch inspection U-sigma shaped and V-sigma shaped gate structures must be able to track subtle variations for several critical parameters, including SiGe-to-gate width, tip-to-gate width, sigma depth and recess depth. For production process control of these structures, a metrology tool must utilize a nondestructive measurement technique, and have high sensitivity, precision and throughput. This paper explores the capabilities of a new-generation scatterometry critical dimension (SCD) metrology tool to measure critical parameters and serve as a production process monitor for 28nm and beyond complex gate structures.
Archive | 1998
Yung-Ho Chuang; J. Joseph Armstrong; David L. Brown; Jason Z. Lin; Bin-Ming Benjamin Tsai
Archive | 2005
Jason Z. Lin; Xing Chu; Kenong Wu; Sharon Mccauley
Archive | 2008
Hong Chen; Michael J. Van Riet; Chien Huei Chen; Jason Z. Lin; Chris Maher; Michael Kowalski; Barry Becker; Stephanie Chen; Subramanian Balakrishnan; Suryanarayana Tummala
Archive | 2008
Jason Z. Lin; Xing Chu
Archive | 2004
Jason Z. Lin; Hong Chen; Evgeni Shifrin; Ashok Kulkarni; Santosh Bhattacharyya; Wei Zhao; Chien-Huei Chen
Archive | 2014
Jason Z. Lin
Archive | 2004
Krishnamurthy Bhaskar; Mark J. Roulo; John S. Taylor; Lawrence R. Miller; Paul T. Russell; Jason Z. Lin; Eliezer Rosengaus; Richard Wallingford; Kishore Bubna
Archive | 2004
Krishnamurthy Bhaskar; Mark J. Roulo; John S. Taylor; Lawrence R. Miller; Paul T. Russell; Jason Z. Lin; Eliezer Rosengaus; Richard Wallingford; Kishore Bubna